Zoubir Khatir

26 papers C 3Journal 22Unranked 1
YearRankTypeTitle / Venue / Authors
2018 J jnl
Analysis of the degradation mechanisms occurring in the topside interconnections of IGBT power devices during power cycling.
Microelectron. Reliab.
Nausicaa Dornic, Ali Ibrahim, Zoubir Khatir, Son-Ha Tran, Jean-Pierre Ousten, Jeffrey Ewanchuk, Stefan Mollov
2018 J jnl
Effect of power cycling tests on traps under the gate of Al
Microelectron. Reliab.
Malika Elharizi, Fadi Zaki, Ali Ibrahim, Zoubir Khatir, Jean-Pierre Ousten
2016 C conf
Control strategy for extreme conditions regenerative braking of a hybrid energy storage system for an electric vehicle.
INDIN
Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal, Mohamad Oueidat
2016 C conf
Energy management of a battery-flywheel storage system used for regenerative braking recuperation of an Electric Vehicle.
IECON
Khaled Itani, Alexandre De Bernardinis, Zoubir Khatir, Ahmad Jammal
2016 J jnl
Power cycling issues and challenges of SiC-MOSFET power modules in high temperature conditions.
Microelectron. Reliab.
Ali Ibrahim, Jean-Pierre Ousten, Richard Lallemand, Zoubir Khatir
2015 — conf
Mechanical and thermal stresses characterization maps on cross-sections of forward biased electronic power devices.
IRPS
Thierry Kociniewski, Zoubir Khatir
2015 C conf
Part-load control stategy of a 20kW SiC power converter for embedded PEMFC multi-stack architectures.
IECON
Abdelfatah Kolli, Alexandre De Bernardinis, Zoubir Khatir, Arnaud Gaillard, Olivier Bethoux, Daniel Hissel
2015 J jnl
Temperature mapping by μ-Raman spectroscopy over cross-section area of power diode in forward biased conditions.
Microelectron. Reliab.
Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir
2014 J jnl
Solder void position and size effects on electro thermal behaviour of MOSFET transistors in forward bias conditions.
Microelectron. Reliab.
Son-Ha Tran, Laurent Dupont, Zoubir Khatir
2014 J jnl
μ-Raman spectroscopy for stress analysis in high power silicon devices.
Microelectron. Reliab.
Thierry Kociniewski, Jeff Moussodji, Zoubir Khatir
2013 J jnl
Distributed electro-thermal model of IGBT chip - Application to top-metal ageing effects in short circuit conditions.
Microelectron. Reliab.
Jeff Moussodji, Thierry Kociniewski, Zoubir Khatir
2013 J jnl
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.
Microelectron. Reliab.
Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy
2013 J jnl
Robustness of 1.2 kV SiC MOSFET devices.
Microelectron. Reliab.
D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene
2012 J jnl
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application.
Microelectron. Reliab.
D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene
2011 J jnl
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling.
IEEE Trans. Ind. Electron.
Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani
2011 J jnl
Investigations of thermal interfaces aging under thermal cycling conditions for power electronics applications.
Microelectron. Reliab.
Jean-Pierre Ousten, Zoubir Khatir
2010 J jnl
Ageing of SiC JFET transistors under repetitive current limitation conditions.
Microelectron. Reliab.
M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah
2010 J jnl
Investigations on junction temperature estimation based on junction voltage measurements.
Microelectron. Reliab.
Zoubir Khatir, Laurent Dupont, Ali Ibrahim
2009 J jnl
Characterisation of power modules ceramic substrates for reliability aspects.
Microelectron. Reliab.
S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps
2009 J jnl
Estimation of SiC JFET temperature during short-circuit operations.
Microelectron. Reliab.
Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche
2007 J jnl
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.
Microelectron. Reliab.
M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre
2007 J jnl
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices.
Microelectron. Reliab.
Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve
2007 J jnl
Failure modes on low voltage power MOSFETs under high temperature application.
Microelectron. Reliab.
Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières
2006 J jnl
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.
Microelectron. Reliab.
Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps
2004 J jnl
Boundary element analysis of thermal fatigue effects on high power IGBT modules.
Microelectron. Reliab.
Zoubir Khatir, Stéphane Lefebvre
2003 J jnl
Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions.
Microelectron. J.
S. Carubelli, Zoubir Khatir