Zhengsheng Han

22 papers C 1Journal 14Unranked 7
YearRankTypeTitle / Venue / Authors
2026 J jnl
An asymmetric trench SiC MOSFET integrated recombination electrode with improved reverse conduction.
Microelectron. J.
Weizhong Chen, Yufan Xiao, Ao Wu, Yangqi Zhou, Hongsheng Zhang, Zhengsheng Han
2025 J jnl
An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-Level Interface Trap.
IEEE Access
Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tian-Chun Ye
2025 J jnl
Radiation Dose Detector of γ-Ray Based on Transient Nonequilibrium Body Potential Under Pseudo-MOSFET Configuration.
IEEE Trans. Instrum. Meas.
Tiexin Zhang, Fanyu Liu, Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu, Jing Wan, Yong Xu, Shi Li, Yuyang Ding, Bo Li, Zhengsheng Han, Tian-Chun Ye
2024 — conf
A PUF-Integrated Power Amplifier with Harmonic Tunable Matching Network-Controlled Spectral Regrowth Technique for RF Fingerprinting in IoT.
A-SSCC
Zexin Su, Chang Liu, Zhe Chen, Zhiqiang Li, Guangyin Shi, Qian Luo, Jixin Chen, Wang Ling Goh, Zhengsheng Han, Bo Li
2024 J jnl
A snapback-free and low-loss reverse conducting LIGBT with integrated multi-functional trench gates.
IEICE Electron. Express
Ao Wu, Weizhong Chen, Xiangwei Zeng, Cheng Li, Haishi Wang, Zhengsheng Han
2024 J jnl
Jiezi: An open-source Python software for simulating quantum transport based on non-equilibrium Green's function formalism.
Comput. Phys. Commun.
Junyan Zhu, Jiang Cao, Chen Song, Bo Li, Zhengsheng Han
2024 C conf
SRAM-Based PUF with Noise Immunity Achieving 0.58% Native BER in 55-nm CMOS.
ISCAS
Zexin Su, Bo Li, Chang Liu, Xiaohui Su, Qian Luo, Hongyu Ren, Zhengsheng Han
2023 — conf
Influence of Back Gate Bias on the Hot Carrier Reliability of DSOI nMOSFET.
IRPS
Xinyi Zhang, Kewei Wang, Fang Wang, Jiangjiang Li, Zhicheng Wu, Duoli Li, Bo Li, Jianhui Bu, Zhengsheng Han
2023 — conf
The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.
IRPS
Yuchong Wang, Siyuan Chen, Fanyu Liu, Bo Li, Jiangjiang Li, Yang Huang, Tiexin Zhang, Xu Zhang, Zhengsheng Han, Tianchun Ye, Jing Wan
2022 J jnl
A snapback-free RC-LIGBT with separated LIGBT and FWD.
IEICE Electron. Express
Xuwei Lin, Weizhong Chen, Haifeng Qin, Hongsheng Zhang, Zhengsheng Han
2019 J jnl
A Snapback-Free and Low-Loss RC-IGBT With Lateral FWD Integrated in the Terminal Region.
IEEE Access
Weizhong Chen, Yao Huang, Shun Li, Yi Huang, Zhengsheng Han
2019 J jnl
A new snapback-free base resistance controlled thyristor with semi-superjunction.
IEICE Electron. Express
Fei Hu, Limei Song, Zhengsheng Han, Huan Du, Jiajun Luo
2019 J jnl
A snapback-free RC-LIGBT with separated LDMOS and LIGBT by the L-shaped SiO
IEICE Electron. Express
Weizhong Chen, Yao Huang, Shun Li, Lingli Wang, Lijun He, Yi Huang, Zhengsheng Han
2019 J jnl
Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique.
IEEE Access
Yangyang Li, Xiaojing Li, Bo Li, Linchun Gao, Weiwei Yan, Fangfang Wang, Duoli Li, Chuanbin Zeng, Jiajun Luo, Zhengsheng Han
2019 — conf
Influences of the Source and Drain Resistance of the MOSFETs on the Single Event Upset Hardness of SRAM cells.
ASICON
Zhongshan Zheng, Zhentao Li, Bo Li, Jiajun Luo, Zhengsheng Han
2019 J jnl
Snapback-free base resistance controlled thyristor with floating N-region.
IEICE Electron. Express
Fei Hu, Limei Song, Zhengsheng Han, Jiajun Luo
2018 J jnl
Constant voltage stress characterization of nFinFET transistor during total ionizing dose experiment.
Microelectron. Reliab.
Binhong Li, Yang Huang, Jianfei Wu, Yunbo Huang, Bo Li, Qingzhu Zhang, Ling Yang, Fayu Wan, Jiajun Luo, Zhengsheng Han, Huaxiang Yin
2018 J jnl
Process variation dependence of total ionizing dose effects in bulk nFinFETs.
Microelectron. Reliab.
Bo Li, Yunbo Huang, Ling Yang, Qingzhu Zhang, Zhongshan Zheng, Binhong Li, Huiping Zhu, Jianhui Bu, Huaxiang Yin, Jiajun Luo, Zhengsheng Han, Haibin Wang
2017 J jnl
A RC-IGBT with built-in free wheeling diode controlled by MOSFET.
IEICE Electron. Express
Weizhong Chen, Qiao Guo, Lijun He, Zhengsheng Han, Yuchan Wang, Xiaoyun Li
2017 — conf
Roles of the gate length and width of the transistors in increasing the single event upset resistance of SRAM cells.
ASICON
Zhongshan Zheng, Zhentao Li, Gengsheng Chen, Jiajun Luo, Zhengsheng Han
2017 — conf
System Analysis and PHM Methods for Power Devices Based on Physics-of-Failure.
DSA
Yulong Zhang, Lulu Wang, Bo Gao, Lixin Wang, Jiajun Luo, Zhengsheng Han
2011 — conf
A new full current mode sense amplifier with compensation circuit.
ASICON
Yiqi Wang, Fazhao Zhao, Mengxin Liu, Zhengsheng Han