| Year | Rank | Type | Title / Venue / Authors |
|---|---|---|---|
| 2026 | — | conf |
ISSCC
|
| 2026 | J | jnl |
Microelectron. J.
|
| 2025 | J | jnl |
IEEE Trans. Circuits Syst. II Express Briefs
|
| 2024 | — | conf |
CICC
|
| 2024 | J | jnl |
IEEE J. Solid State Circuits
|
| 2024 | J | jnl |
IEEE Trans. Circuits Syst. I Regul. Pap.
|
| 2023 | J | jnl |
IEEE Trans. Circuits Syst. I Regul. Pap.
|
| 2023 | — | conf |
CICC
|
| 2023 | — | conf |
ICTA
|
| 2023 | J | jnl |
IEEE Trans. Circuits Syst. II Express Briefs
|
| 2023 | J | jnl |
Int. J. Circuit Theory Appl.
|
| 2023 | J | jnl |
Sci. China Inf. Sci.
|
| 2022 | — | conf |
ISSCC
|
| 2022 | — | conf |
ICTA
|
| 2021 | — | conf |
ICTA
|
| 2021 | — | conf |
A New Method to Extract Mobility Degradation and Parasitic Series Resistance of Nano-scaled MOSFETs.
ICTA
|
| 2021 | J | jnl |
IEEE Trans. Circuits Syst. II Express Briefs
|
| 2021 | J | jnl |
Microelectron. J.
|
| 2021 | — | conf |
ICTA
|
| 2021 | — | conf |
An Analytical Model of Energy Band Considering Drain Doping Effect of TFET With Exponential Barrier.
ICTA
|
| 2021 | J | jnl |
IEEE Trans. Circuits Syst. II Express Briefs
|
| 2020 | — | conf |
ICTA
|
| 2019 | — | conf |
ISDCS
|
| 2019 | J | jnl |
Sci. China Inf. Sci.
|
| 2019 | C | conf |
ISCAS
|