Yusuke Iguchi

11 papers Misc 1Journal 7Unranked 3
YearRankTypeTitle / Venue / Authors
2011 J jnl
Design Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T Differential.
Inf. Media Technol.
Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2011 J jnl
Design Choice in 45-nm Dual-Port SRAM - 8T, 10T Single End, and 10T Differential.
IPSJ Trans. Syst. LSI Des. Methodol.
Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2010 J jnl
Fixed Point Data Type Modeling for High Level Synthesis.
IEICE Trans. Electron.
Benjamin Carrión Schäfer, Yusuke Iguchi, Wataru Takahashi, Shingo Nagatani, Kazutoshi Wakabayashi
2009 — conf
A 0.56-V 128kb 10T SRAM using column line assist (CLA) scheme.
ISQED
Shunsuke Okumura, Yusuke Iguchi, Shusuke Yoshimoto, Hidehiro Fujiwara, Hiroki Noguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2009 Misc conf
A 7T/14T Dependable SRAM and its Array Structure to Avoid Half Selection.
VLSI Design
Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Hiroshi Kawaguchi, Masahiko Yoshimoto
2009 J jnl
A Dependable SRAM with 7T/14T Memory Cells.
IEICE Trans. Electron.
Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Hiroshi Kawaguchi, Masahiko Yoshimoto
2008 J jnl
A 10T Non-precharge Two-Port SRAM Reducing Readout Power for Video Processing.
IEICE Trans. Electron.
Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Shunsuke Okumura, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2008 — conf
Quality of a Bit (QoB): A New Concept in Dependable SRAM.
ISQED
Hidehiro Fujiwara, Shunsuke Okumura, Yusuke Iguchi, Hiroki Noguchi, Yasuhiro Morita, Hiroshi Kawaguchi, Masahiko Yoshimoto
2007 — conf
A 10T Non-Precharge Two-Port SRAM for 74% Power Reduction in Video Processing.
ISVLSI
Hiroki Noguchi, Yusuke Iguchi, Hidehiro Fujiwara, Yasuhiro Morita, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2007 J jnl
Area Comparison between 6T and 8T SRAM Cells in Dual-
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto
2007 J jnl
Area Optimization in 6T and 8T SRAM Cells Considering
IEICE Trans. Electron.
Yasuhiro Morita, Hidehiro Fujiwara, Hiroki Noguchi, Yusuke Iguchi, Koji Nii, Hiroshi Kawaguchi, Masahiko Yoshimoto