Yusuke Higashi

15 papers Journal 2Unranked 13

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. IRPS Yusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, Ruben Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen, Robin Degraeve
2025	—	`conf`	Gate Stack Development for Next Gen High Voltage Periphery DRAM Devices. IRPS J. P. Bastos, Jacopo Franco, Barry J. O'Sullivan, Yusuke Higashi, Adrian Chasin, J. Ganguly, Hiroaki Arimura, Alessio Spessot, M.-S. Kim, N. Horiguchi
2024	—	`conf`	Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and Endurance. IRPS Yusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen
2024	—	`conf`	Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown Characteristics. IRPS J. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi
2023	—	`conf`	Comprehensive Analysis of Hole-Trapping in SiN Films with a Wide Range of Time Constants Based on Dynamic C-V. IRPS Harumi Seki, Reika Ichihara, Yusuke Higashi, Yasushi Nakasaki, Masumi Saitoh, Masamichi Suzuki
2023	—	`conf`	Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability. VLSI Technology and Circuits Yuta Aiba, Yusuke Higashi, Hitomi Tanaka, Hiroki Tanaka, Fumie Kikushima, Toshio Fujisawa, Hideko Mukaida, Masayuki Miura, Tomoya Sanuki
2023	—	`conf`	Novel Operation Scheme for Suppressing Disturb in HfO2-based FeFET Considering Charge- Trapping-Coupled Polarization Dynamics. IRPS Takamasa Hamai, Kunifumi Suzuki, Reika Ichihara, Yusuke Higashi, Yoko Yoshimura, Kiwamu Sakuma, Kensuke Ota, Kota Takahashi, Kazuhiro Matsuo, Shosuke Fujii, Masumi Saitoh
2022	—	`conf`	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022	—	`conf`	Future route presentation to autonomous mobile wheelchair passengers using the movement of vibrotactile stimuli. SICE Yusuke Higashi, Tetsushi Ikeda, Hiroyuki Takai, Satoshi Iwaki
2022	—	`conf`	Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
2022	—	`conf`	Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation. IMW Hitomi Tanaka, Yuta Aiba, Takashi Maeda, Kensuke Ota, Yusuke Higashi, Keiichi Sawa, Fumie Kikushima, Masayuki Miura, Tomoya Sanuki
2019	—	`conf`	New Insights into the Imprint Effect in FE-HfO2 and its Recovery. IRPS Yusuke Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, Nicolo Ronchi, Sean R. C. McMitchell, Kaustuv Banerjee, Umberto Celano, Masamichi Suzuki, Dimitri Linten, Jan Van Houdt
2018	—	`conf`	Study on mechanism of thermal curing in ultra-thin gate dielectrics. IRPS Yuichiro Mitani, Yusuke Higashi, Yasushi Nakasaki
2017	J	`jnl`	Error Tolerance Analysis of Deep Learning Hardware Using a Restricted Boltzmann Machine Toward Low-Power Memory Implementation. IEEE Trans. Circuits Syst. II Express Briefs Takao Marukame, Kodai Ueyoshi, Tetsuya Asai, Masato Motomura, Alexandre Schmid, Masamichi Suzuki, Yusuke Higashi, Yuichiro Mitani
2017	J	`jnl`	Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface. Microelectron. Reliab. Yusuke Higashi, Riichiro Takaishi, Koichi Kato, Masamichi Suzuki, Yasushi Nakasaki, Mitsuhiro Tomita, Yuichiro Mitani, Masuaki Matsumoto, Shohei Ogura, Katsuyuki Fukutani, Kikuo Yamabe