Yu Wu

17 papers Journal 3Unranked 14
YearRankTypeTitle / Venue / Authors
2025 J jnl
A simulation study of SiC trench JFET with embedded diode for performance improvement.
Microelectron. J.
Shida Zhang, Xintian Zhou, Yun Tang, Yunpeng Jia, Dongqing Hu, Yu Wu, Yuanfu Zhao
2025 J jnl
An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier.
IEEE Access
Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao
2023 — conf
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure.
EITCE
Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou
2023 — conf
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension.
EITCE
Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
2022 — conf
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers.
EITCE
Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
2022 — conf
Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping.
EITCE
Yuefeng Wu, Yu Wu, Xintian Zhou, Feng Liu, Lei Zong
2022 — conf
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region.
EITCE
Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
2022 — conf
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection.
EITCE
Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
2021 — conf
3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET.
EITCE
Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu
2021 — conf
High voltage CIBH diodes with new structure on the cathode side of the edge.
EITCE
Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang, Yu Wu, Xinyu Li
2021 — conf
Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET.
EITCE
Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong
2021 — conf
Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping.
EITCE
Chen Gao, Yu Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong
2021 — conf
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode.
EITCE
Kai Zhao, Yu Wu, Yueyang Liu, Xintian Zhou, Zhaomin Yao, Yingying Lei
2020 — conf
Influence of Backside p-Region Width on the Overcurrent Reverse Recovery of High-voltage RFC Diodes.
EITCE
Lihao Wang, Yu Wu, Yunpeng Jia, Yuanfu Zhao, Zhonghan Deng
2020 — conf
Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode.
EITCE
Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang
2020 — conf
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode.
EITCE
Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun
2018 J jnl
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes.
Microelectron. Reliab.
Yunpeng Jia, Zhenhua Lin, Dongqing Hu, Yu Wu, Peng Li, Guanghai Liu