Yih Wang

38 papers Journal 15Unranked 23
YearRankTypeTitle / Venue / Authors
2026 — conf
15.4 A 16nm 168Mb Embedded STT-MRAM with 0.0249µm
ISSCC
Po-Hao Lee, Chia-Fu Lee, Hon-Jarn Lin, Cheng-Han Lu, Yen-An Chang, Pranata W. Sanjaya, Chia-Jung Tsen, Kuan-Chun Chen, Ming-Chieh Lin, Chao-Jung Hung, Tan-Li Chou, Chih-Hui Weng, Chia-Yu Wang, J. J. Wu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2026 J jnl
A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm
IEEE J. Solid State Circuits
Haruki Mori, Je-Min Hung, Wei-Chang Zhao, Kinshuk Khare, Brian Crafton, Hiroaki Ishii, Cheng-En Lee, Xiaochen Peng, Xiaoyu Sun, Yorinobu Fujino, Chia-Jung Tsen, Vineet Joshi, Chao-Kai Chuang, Takeshi Hashizume, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Hidehiro Fujiwara, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2025 J jnl
A 3 nm-FinFET 4.3 GHz 21.1 Mb/mm
IEEE J. Solid State Circuits
Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
2025 — conf
A 38.1Mb/mm
ISSCC
Tsung-Yung Jonathan Chang, Yen-Huei Chen, K. Venkateswara Reddy, Nikhil Puri, Teja Masina, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Ku-Feng Lin, Ming-Hung Chang, Ching-Wei Wu, Robin Lee, Yih Wang, Hung-Jen Liao, Quincy Li, Ping-Wei Wang, Geoffrey Yeap
2024 — conf
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture.
ISSCC
Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
2024 — conf
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm
ISSCC
Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2024 — conf
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10
ISSCC
Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang
2024 — conf
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm
ISSCC
Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Kinshuk Khare, Cheng-En Lee, Xiaochen Peng, Vineet Joshi, Chao-Kai Chuang, Shu-Huan Hsu, Takeshi Hashizume, Toshiaki Naganuma, Chen-Hung Tien, Yao-Yi Liu, Yen-Chien Lai, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2024 — conf
A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
VLSI Technology and Circuits
Ming-Chieh Huang, Wei Wing Mar, Shankar Kanade, Boris Bai, Aditya Gayatri, Krishna Khairnar, Amy Lai, Yu-Hao Hsu, Hung-Jen Liao, Yih Wang, Tsung-Yung Jonathan Chang
2024 J jnl
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Xiaoyu Sun, Weidong Cao, Brian Crafton, Kerem Akarvardar, Haruki Mori, Hidehiro Fujiwara, Hiroki Noguchi, Yu-Der Chih, Meng-Fan Chang, Yih Wang, Tsung-Yung Jonathan Chang
2023 — conf
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
ISSCC
Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2023 — conf
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
ISSCC
Haruki Mori, Wei-Chang Zhao, Cheng-En Lee, Chia-Fu Lee, Yu-Hao Hsu, Chao-Kai Chuang, Takeshi Hashizume, Hao-Chun Tung, Yao-Yi Liu, Shin-Rung Wu, Kerem Akarvardar, Tan-Li Chou, Hidehiro Fujiwara, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2023 J jnl
Guest Editorial Introduction to the Special Issue on the 2022 IEEE International Solid-State Circuits Conference (ISSCC).
IEEE J. Solid State Circuits
Masum Hossain, Arijit Raychowdhury, Sanu K. Mathew, Yakun Sophia Shao, Yih Wang
2023 — conf
Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs.
VLSI Technology and Circuits
Wei-Xiang You, Cheng-Yin Wang, Yih Wang, Tsung-Yung Jonathan Chang, Szuya Sandy Liao
2022 — conf
A 135.6Tbps/W 2R2W SRAM with 12T Logic Bit-cell with Vmin Down to 335mV Targeted for Machine-Learning Applications in 6nm FinFET CMOS Technology.
VLSI Technology and Circuits
Nail Etkin Can Akkaya, Gary Chan, Hung-Jen Liao, Yih Wang, Jonathan Chang
2022 — conf
A 5-nm 254-TOPS/W 221-TOPS/mm
ISSCC
Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2021 — conf
A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing.
VLSI Circuits
Shaun Chou, Gu-Huan Li, Shawn Chen, Jun-Hao Chang, Wan-Hsueh Cheng, Shao-Ding Wu, Philex Fan, Chia-En Huang, Yu-Der Chih, Yih Wang, Jonathan Chang
2021 J jnl
A 7-nm Compute-in-Memory SRAM Macro Supporting Multi-Bit Input, Weight and Output and Achieving 351 TOPS/W and 372.4 GOPS.
IEEE J. Solid State Circuits
Mahmut E. Sinangil, Burak Erbagci, Rawan Naous, Kerem Akarvardar, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
2021 — conf
An 89TOPS/W and 16.3TOPS/mm
ISSCC
Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo, Cheng-Han Lu, Haruki Mori, Wei-Cheng Zhao, Dar Sun, Mahmut E. Sinangil, Yen-Huei Chen, Tan-Li Chou, Kerem Akarvardar, Hung-Jen Liao, Yih Wang, Meng-Fan Chang, Tsung-Yung Jonathan Chang
2020 — conf
15.3 A 351TOPS/W and 372.4GOPS Compute-in-Memory SRAM Macro in 7nm FinFET CMOS for Machine-Learning Applications.
ISSCC
Qing Dong, Mahmut E. Sinangil, Burak Erbagci, Dar Sun, Win-San Khwa, Hung-Jen Liao, Yih Wang, Jonathan Chang
2020 — conf
Memory for Data-Centric Computing: A Technology Perspective.
VLSI-DAT
Yih Wang
2015 J jnl
A 1 Gb 2 GHz 128 GB/s Bandwidth Embedded DRAM in 22 nm Tri-Gate CMOS Technology.
IEEE J. Solid State Circuits
Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang
2014 — conf
13.1 A 1Gb 2GHz embedded DRAM in 22nm tri-gate CMOS technology.
ISSCC
Fatih Hamzaoglu, Umut Arslan, Nabhendra Bisnik, Swaroop Ghosh, Manoj B. Lal, Nick Lindert, Mesut Meterelliyoz, Randy B. Osborne, Joodong Park, Shigeki Tomishima, Yih Wang, Kevin Zhang
2014 — conf
2
VLSIC
Mesut Meterelliyoz, Fuad H. Al-amoody, Umut Arslan, Fatih Hamzaoglu, Luke Hood, Manoj B. Lal, Jeffrey L. Miller, Anand Ramasundar, Dan Soltman, Ifar Wan, Yih Wang, Kevin Zhang
2013 J jnl
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.
IEEE J. Solid State Circuits
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Mesut Meterelliyoz, John Keane, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
2012 — conf
A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry.
ISSCC
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
2011 J jnl
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation.
IEEE J. Solid State Circuits
Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang, Kevin Zhang
2011 J jnl
Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design.
IEEE Des. Test Comput.
Fatih Hamzaoglu, Yih Wang, Pramod Kolar, Liqiong Wei, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
2010 — conf
A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.
ISSCC
Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
2010 J jnl
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management.
IEEE J. Solid State Circuits
Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2009 J jnl
A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology.
IEEE J. Solid State Circuits
Fatih Hamzaoglu, Kevin Zhang, Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Yong-Gee Ng, Andrei Pavlov, Ken Smits, Mark Bohr
2009 — conf
A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management.
ISSCC
Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2009 J jnl
Process, Temperature, and Supply-Noise Tolerant 45nm Dense Cache Arrays With Diffusion-Notch-Free (DNF) 6T SRAM Cells and Dynamic Multi-Vcc Circuits.
IEEE J. Solid State Circuits
Muhammad M. Khellah, Nam-Sung Kim, Yibin Ye, Dinesh Somasekhar, Tanay Karnik, Nitin Borkar, Gunjan Pandya, Fatih Hamzaoglu, Tom Coan, Yih Wang, Kevin Zhang, Clair Webb, Vivek De
2008 J jnl
A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications.
IEEE J. Solid State Circuits
Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Tom Coan, Fatih Hamzaoglu, Walid M. Hafez, Chia-Hong Jan, Pramod Kolar, Sarvesh H. Kulkarni, Jie-Feng Lin, Yong-Gee Ng, Ian Post, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2008 — conf
A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology.
ISSCC
Fatih Hamzaoglu, Kevin Zhang, Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Yong-Gee Ng, Andrei Pavlov, Ken Smits, Mark Bohr
2007 — conf
A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications.
ISSCC
Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Tom Coan, Fatih Hamzaoglu, Walid M. Hafez, Chia-Hong Jan, Pramod Kolar, Sarvesh H. Kulkarni, Jie-Feng Lin, Yong-Gee Ng, Ian Post, Liqiong Wei, Yih Zhang, Kevin Zhang, Mark Bohr
2006 J jnl
A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply.
IEEE J. Solid State Circuits
Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang, Bo Zheng, Mark Bohr
2005 J jnl
SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction.
IEEE J. Solid State Circuits
Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang, Bo Zheng, Mark Bohr