Xu Yan

16 papers Journal 14Unranked 2
YearRankTypeTitle / Venue / Authors
2025 J jnl
A 25-GHz PLL Achieving 8-ns Phase-Shifting Time With Double-Path Modulation Scheme.
IEEE Trans. Very Large Scale Integr. Syst.
Weichen Zhao, Weichen Tao, Yongheng Liu, Jingyuan Zhang, Zhongjun Zhang, Xu Yan, C. Patrick Yue, Fujiang Lin
2025 J jnl
A 360° Tunable Phase Shifter With Low Phase Error Based on Bandpass Networks in 0.25- μm GaN Technology.
IEEE Trans. Very Large Scale Integr. Syst.
Hanjun Zhao, Xu Yan, Hui Chu, Xiaohua Zhu, Yongxin Guo
2025 J jnl
Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology.
IEEE Trans. Circuits Syst. I Regul. Pap.
Xu Yan, Jingyuan Zhang, Baoguo Yang, Si-Ping Gao, Yongxin Guo
2025 J jnl
Design and Analysis of a Coupled-Line-Based Load-Modulated Balanced Amplifier MMIC With Enhanced Bandwidth Performance.
IEEE Trans. Circuits Syst. I Regul. Pap.
Jingyuan Zhang, Weichen Zhao, Baoguo Yang, Xu Yan, Yongxin Guo
2025 J jnl
Design and Miniaturization of a 3.1-5.5-GHz Fully Distributed Efficient Power Amplifier MMIC in GaN-on-SiC HEMT Technology.
IEEE Trans. Circuits Syst. I Regul. Pap.
Xu Yan, Jingyuan Zhang, Guansheng Lv, Wenhua Chen, Yongxin Guo
2024 J jnl
An Efficient Transistor-Model-Assisted Layout Synthesis Approach Using Improved Implicit Space Mapping for High-Performance MMIC PAs.
IEEE Trans. Circuits Syst. II Express Briefs
Jingyuan Zhang, Xu Yan, Haorui Luo, Yongxin Guo
2024 J jnl
Beyond the Bandwidth Limit: A Tutorial on Low-Noise Amplifier Circuits for Advanced Systems Based on III-V Process.
IEEE Trans. Circuits Syst. II Express Briefs
Xu Yan, Jingyuan Zhang, Si-Ping Gao, Yongxin Guo
2024 J jnl
Design of a Fully Integrated Wideband Continuous-Mode Asymmetrical Doherty Power Amplifier in GaN-on-SiC HEMT Technology.
IEEE Trans. Circuits Syst. II Express Briefs
Jingyuan Zhang, Renlong Han, Falin Liu, Xu Yan, Yongxin Guo
2024 J jnl
Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25- μm GaN HEMT Technology.
IEEE Trans. Very Large Scale Integr. Syst.
Xu Yan, Jingyuan Zhang, Guansheng Lv, Wenhua Chen, Yongxin Guo
2023 J jnl
A 9-to-42-GHz High-Gain Low-Noise Amplifier Using Coupled Interstage Feedback in 0.15-μm GaAs pHEMT Technology.
IEEE Trans. Circuits Syst. I Regul. Pap.
Xu Yan, Haorui Luo, Jingyuan Zhang, Si-Ping Gao, Yongxin Guo
2023 J jnl
A Compact 1.0-12.5-GHz LNA MMIC With 1.5-dB NF Based on Multiple Resistive Feedback in 0.15-μm GaAs pHEMT Technology.
IEEE Trans. Circuits Syst. I Regul. Pap.
Xu Yan, Jingyuan Zhang, Haorui Luo, Si-Ping Gao, Yongxin Guo
2023 J jnl
A Rapid Matching Network Layout Synthesis and Optimization Method for High-Performance MMIC PAs Using Modified Implicit Space Mapping.
IEEE Trans. Circuits Syst. II Express Briefs
Jingyuan Zhang, Xu Yan, Haorui Luo, Hao Zhang, Yongxin Guo
2022 J jnl
Design and Analysis of a Cascode Distributed LNA With Gain and Noise Improvement in 0.15-μm GaAs pHEMT Technology.
IEEE Trans. Circuits Syst. II Express Briefs
Xu Yan, Haorui Luo, Jingyuan Zhang, Hao Zhang, Yongxin Guo
2018 — conf
The Design and Miniaturization of 6-15 GHz Lumped-Element Wilkinson Power Divider Based on GaAs IPD Technology.
APCCAS
Yang Chen, Xu Yan, Han Wu, Liguo Sun
2017 — conf
A 1.0-7.0 GHz inductorless RF mixer with multiple feedback and active load in 40-nm CMOS.
ASICON
Xu Yan, Lu Yang, Hao Zhang, Jili Zhang, Fujiang Lin
2017 J jnl
Wireless Interconnect in Multilayer Chip-Area-Networks for Future Multimaterial High-Speed Systems Design.
Wirel. Commun. Mob. Comput.
Oluwole John Famoriji, Xu Yan, Mehdi Khan, Rao Kashif, Akinwale Fadamiro, Md Sadek Ali, Fujiang Lin