Xintian Zhou - RankMe

21 papers Journal 2Unranked 19

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	A simulation study of SiC trench JFET with embedded diode for performance improvement. Microelectron. J. Shida Zhang, Xintian Zhou, Yun Tang, Yunpeng Jia, Dongqing Hu, Yu Wu, Yuanfu Zhao
2025	J	`jnl`	An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier. IEEE Access Xintian Zhou, Jinglong Yan, Yun Tang, Dongqing Hu, Yu Wu, Yunpeng Jia, Bodian Li, Yuanfu Zhao
2023	—	`conf`	Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou
2023	—	`conf`	Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
2022	—	`conf`	A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu
2022	—	`conf`	Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping. EITCE Yuefeng Wu, Yu Wu, Xintian Zhou, Feng Liu, Lei Zong
2022	—	`conf`	Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
2022	—	`conf`	Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li
2021	—	`conf`	3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. EITCE Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu
2021	—	`conf`	A Novel Reverse-Conducting IGBT With Built-In Channel Diode. EITCE Xingyu Fang, Yunpeng Jia, Xintian Zhou, Xinyu Li, Yingying Lei, Kai Zhao
2021	—	`conf`	Anti-total dose effect design of half-bridge driving chip. EITCE Jinpeng Zhou, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Yue Tan, Xinyu Li
2021	—	`conf`	High voltage CIBH diodes with new structure on the cathode side of the edge. EITCE Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang, Yu Wu, Xinyu Li
2021	—	`conf`	Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. EITCE Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong
2021	—	`conf`	Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping. EITCE Chen Gao, Yu Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong
2021	—	`conf`	Investigation of Anti-SEB Capability of 160 V Power MOSFET Device with Multiple Buffer Layer. EITCE Wanting Yang, Dongqing Hu, Xintian Zhou, Xinyu Li, Xingyu Fang, Kai Zhao
2021	—	`conf`	Study on The Degradations Produced by Different P-base Diffusion Temperatures on SGT MOSFET With Approximate Threshold Voltage. EITCE Xinyu Li, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Xingyu Fang, Zhonghan Deng
2021	—	`conf`	The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode. EITCE Kai Zhao, Yu Wu, Yueyang Liu, Xintian Zhou, Zhaomin Yao, Yingying Lei
2020	—	`conf`	Architecture-level Radiation-Hardened design applied to halfbridge GaN driver. EITCE Yue Tan, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Fujie Zhao, Xinyu Li, Jinpeng Zhou
2020	—	`conf`	Electrical Parameters Degradation of E-mode GaN Under Repeated Short-Circuit Impacts. EITCE Lei Sun, Dongqing Hu, Xintian Zhou, Meng Liu, Jie Cao
2020	—	`conf`	Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. EITCE Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang
2020	—	`conf`	The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. EITCE Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun