Xinhong Cheng

11 papers Journal 10Unranked 1
YearRankTypeTitle / Venue / Authors
2024 J jnl
A fin-gate p-GaN HEMT with high threshold voltage and improved dynamic performance.
Microelectron. J.
Lingyan Shen, Xuetong Zhou, Li Zheng, Xinhong Cheng
2023 — conf
A Fin-p-GaN HEMT for High Threshold Voltage with Enhanced Stability.
DRC
Lingyan Shen, Xinhong Cheng, Li Zheng, Yuehui Yu
2022 J jnl
A dV/dt noise canceling circuit of capacitive-isolated gate drivers.
IEICE Electron. Express
Xuefei Zhang, Tiantian Liu, Yuhua Quan, Xiaoyi Huang, Xinhong Cheng, Yuehui Yu
2021 J jnl
A Self-Adaptive Measurement System for IGBT Collector Current Using Package Parasitics.
IEEE Trans. Ind. Electron.
Hongyue Zhu, Xinhong Cheng, Wai Tung Ng, Dawei Xu, Xinchang Li, Yifei Xia
2021 J jnl
A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time.
IEICE Electron. Express
Tiantian Liu, Yuhua Quan, Xuetong Zhou, Yufei Tian, Xinhong Cheng, Xiaoyi Huang
2020 J jnl
A self-adaptive blanking time circuit for fast IGBT de-saturation short-circuit protection.
IEICE Electron. Express
Hongyue Zhu, Xinhong Cheng, Yifei Xia, Dawei Xu, Tiantian Liu, Zhenwei Zhang
2018 J jnl
A high voltage multiplexer with rail to rail output swing for battery management system applications [IEICE Electronics Express Vol. 14(2017) No. 1 pp. 20161144].
IEICE Electron. Express
Xinchang Li, Dawei Xu, Hongyue Zhu, Zhuojun Chen, Zhiqiang Yang, Xinhong Cheng, Yuehui Yu, Wai Tung Ng
2018 J jnl
An improved noise immune level-shifter via IGBT gate-emitter voltage detection [IEICE Electronics Express Vol. 15(2018) No. 9 pp. 20180293].
IEICE Electron. Express
Hongyue Zhu, Dawei Xu, Xinchang Li, Chao Xu, Dengpeng Wu, Xinhong Cheng, Xiaoyun Li
2018 J jnl
An improved noise immune level-shifter via IGBT gate-emitter voltage detection.
IEICE Electron. Express
Hongyue Zhu, Dawei Xu, Xinchang Li, Chao Xu, Dengpeng Wu, Xinhong Cheng, Xiaoyun Li
2017 J jnl
A high voltage multiplexer with rail to rail output swing for battery management system applications.
IEICE Electron. Express
Xinchang Li, Dawei Xu, Hongyue Zhu, Zhuojun Chen, Zhiqiang Yang, Xinhong Cheng, Yuehui Yu, Wai Tung Ng
2014 J jnl
A novel partial-SOI LDMOSFET (>800 V) with n-type floating buried layer in substrate.
Microelectron. Reliab.
Chao Xia, Xinhong Cheng, Zhongjian Wang, Duo Cao, Tingting Jia, Li Zheng, Yuehui Yu, Dashen Shen