Xiaowu Cai

13 papers Journal 13
YearRankTypeTitle / Venue / Authors
2026 J jnl
A buffer layer based hardening strategy for SEB mitigation in high-voltage MOSFETs for space applications.
Microelectron. J.
Yanfei Zhang, Xueqin Gong, Ge Zhao, Xiaowu Cai, Mengxin Liu
2026 J jnl
High-Speed Floating Voltage Level Shifter With Self-Locked Noise Immunity for High-Side Gate Driver.
IEEE Trans. Very Large Scale Integr. Syst.
Xupeng Wang, Xiaowu Cai, Yu Lu, Weidong Zhang, Xuanyi Huo, Longli Pan, Jian Lu, Liang Shan, Lei Wang, Bo Li
2025 J jnl
A 600-V half-bridge gate drive circuit with high-speed and high-noise-immunity level shifter.
Microelectron. J.
Xupeng Wang, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Jian Lu, Liang Shan, Lei Wang, Bo Li
2024 J jnl
A Novel Reliability-Enhanced Dual Over-Temperature Protection Circuit With Delayed Thermal Restart for Power ICs.
IEEE Trans. Circuits Syst. II Express Briefs
Jianying Dang, Xiaowu Cai, Longli Pan, Liang Shan, Yu Lu, Yafei Xie, Xupeng Wang, Shiping Wang, Bo Li
2024 J jnl
A dual-mode buck converter with dynamic sawtooth voltage for wide input voltage range application.
IEICE Electron. Express
Yafei Xie, Xiaowu Cai, Yu Lu, Longli Pan, Jian Lu, Lei Wang, Bo Li
2024 J jnl
A nMOS-R Cross-Coupled Level Shifter With High dV/dt Noise Immunity for 600-V High-Voltage Gate Driver IC.
IEEE Trans. Very Large Scale Integr. Syst.
Yu Lu, Xiaowu Cai, Jian Lu, Longli Pan, Jianying Dang, Yafei Xie, Xupeng Wang, Bo Li
2024 J jnl
A precision current sensing circuit with chopper amplifier of symmetric topology.
Microelectron. J.
Tian Han, Fazhan Zhao, Ximing Fu, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Wenxin Zhao, Bo Li
2024 J jnl
An integrated capacitor-less LDO with transient and stability enhancement.
IEICE Electron. Express
Yafei Xie, Xiaowu Cai, Yu Lu, Jianying Dang, Longli Pan, Mali Gao, Lei Wang, Bo Li
2023 J jnl
A high reliability under-voltage lock out circuit for power driver IC.
Integr.
Liqiang Ding, Xiaowu Cai, Mali Gao, Ruirui Xia, Yuexin Gao
2023 J jnl
A wide input range, external capacitor-less LDO with fast transient response.
IEICE Electron. Express
Mali Gao, Xiaowu Cai, Weiwei Yan, Haitao Zhao, Ruirui Xia, Yuexin Gao
2023 J jnl
An on-chip integrated current sensor with high precision and large current range for smart power ICs.
Microelectron. J.
Ruirui Xia, Xiaowu Cai, Liqiang Ding, Mali Gao, Yuexin Gao, Tian Han, Jianying Dang, Bo Li
2023 J jnl
Novel SenseFET structure for VDMOS with adopting body reverse bias technique to adjust the reference current ratio.
Microelectron. J.
Tian Han, Fazhan Zhao, Xiaowu Cai, Liang Shan, Yun Tang, Bo Li
2013 J jnl
Investigation of high voltage SCR-LDMOS ESD device for 150 V SOI BCD process.
Microelectron. Reliab.
Xiaowu Cai, Junxiu Wei, Chao Liang, Zhe Gao, Chuan Lv