Xiaorong Luo

13 papers Journal 12Unranked 1
YearRankTypeTitle / Venue / Authors
2025 J jnl
An integrated GaN PNP Bipolar Junction Transistor for ESD applications.
Microelectron. J.
Pengfei Zhang, Zhijia Zhao, Gaoqiang Deng, Xiaorong Luo, Shuxiang Sun, Yuxi Wei, Jie Wei
2024 J jnl
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination.
Microelectron. J.
Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang, Yuxin Wu
2024 J jnl
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode.
Microelectron. J.
Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo
2024 J jnl
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss.
Microelectron. J.
Chengtao Luo, Cheng Yang, Zhijia Zhao, Xintong Xie, Yuxi Wei, Jie Wei, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo
2023 J jnl
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss.
Microelectron. J.
Zhijia Zhao, Yuxi Wei, Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Xiaorong Luo, Bo Zhang
2022 J jnl
Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate.
Sci. China Inf. Sci.
Xiaorong Luo, Junyue Huang, Xu Song, Qinfeng Jiang, Jie Wei, Jian Fang, Fei Yang
2022 J jnl
Sign-changing solutions to the critical Choquard equation.
Appl. Math. Lett.
Xiaorong Luo, Anmin Mao
2021 J jnl
TOC determination of Zhangjiatan shale of Yanchang formation, Ordos Basin, China, using support vector regression and well logs.
Earth Sci. Informatics
Xin Liu, Yuhong Lei, Xiaorong Luo, Xiangzeng Wang, Kaiyuan Chen, Ming Cheng, Jintao Yin
2019 J jnl
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers.
Sci. China Inf. Sci.
Fu Peng, Chao Yang, Siyu Deng, Dongya Ouyang, Bo Zhang, Jie Wei, Xiaorong Luo
2018 J jnl
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels.
Sci. China Inf. Sci.
Chao Yang, Xiaorong Luo, Siyu Deng, Fu Peng, Bo Zhang
2017 — conf
Ultralow power loss integratable high-voltage MOSFETs.
ASICON
Xiaorong Luo, Weiwei Ge, Bo Zhang
2016 J jnl
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer.
Sci. China Inf. Sci.
Jiayun Xiong, Chao Yang, Jie Wei, Junfeng Wu, Bo Zhang, Xiaorong Luo
2013 J jnl
Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer.
J. Circuits Syst. Comput.
Jie Fan, Xiaorong Luo, Bo Zhang, Zhaoji Li