Xavier Aymerich

31 papers Journal 28Unranked 3
YearRankTypeTitle / Venue / Authors
2019 J jnl
Experimental Verification of Memristor-Based Material Implication NAND Operation.
IEEE Trans. Emerg. Top. Comput.
Marcos Maestro-Izquierdo, Javier Martín-Martínez, Albert Crespo-Yepes, Manel Escudero, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Antonio Rubio
2018 — conf
Investigation of Conductivity Changes in Memristors under Massive Pulsed Characterization.
DCIS
Marta Pedro, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2015 — conf
Threshold voltage and on-current Variability related to interface traps spatial distribution.
ESSDERC
V. Velayudhan, Javier Martín-Martínez, Marc Porti, Carlos Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Carlos Marquez, Francisco Gámiz
2013 J jnl
Influence of the interface trap location on the performance and variability of ultra-scaled MOSFETs.
Microelectron. Reliab.
V. Velayudhan, Francisco Gámiz, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2013 J jnl
Nanoscale and device level electrical behavior of annealed ALD Hf-based gate oxide stacks grown with different precursors.
Microelectron. Reliab.
Albin Bayerl, Mario Lanza, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich, Stefan De Gendt
2013 J jnl
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack: pMOS and nMOS comparison and reliability implications.
Microelectron. Reliab.
Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2012 J jnl
Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETs.
Microelectron. Reliab.
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. González, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
2012 J jnl
Nanoscale observations of resistive switching high and low conductivity states on TiN/HfO
Microelectron. Reliab.
Violaine Iglesias, Mario Lanza, Albin Bayerl, Marc Porti, Montserrat Nafría, Xavier Aymerich, Lifeng Liu, Jinfeng Kang, Gennadi Bersuker, Kai Zhang, Ziyong Shen
2012 — conf
Unified characterization of RTN and BTI for circuit performance and variability simulation.
ESSDERC
Nuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2010 J jnl
SPICE modelling of hot-carrier degradation in Si
Microelectron. Reliab.
Javier Martín-Martínez, Esteve Amat, M. B. González, P. Verheyen, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Eddy Simoen
2010 J jnl
UHV CAFM characterization of high-k dielectrics: Effect of the technique resolution on the pre- and post-breakdown electrical measurements.
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, E. Whittaker, B. Hamilton
2009 J jnl
Reversible dielectric breakdown in ultrathin Hf based high-k stacks under current-limited stresses.
Microelectron. Reliab.
Albert Crespo-Yepes, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2009 J jnl
Trapped charge and stress induced leakage current (SILC) in tunnel SiO
Microelectron. Reliab.
Mario Lanza, Marc Porti, Montserrat Nafría, Xavier Aymerich, G. Ghidini, A. Sebastiani
2008 J jnl
Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors.
Microelectron. Reliab.
W. Polspoel, Wilfried Vandervorst, Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
2007 J jnl
Effect of oxide breakdown on RS latches.
Microelectron. Reliab.
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2007 J jnl
Influence of the SiO
Microelectron. Reliab.
Esteve Amat, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
2007 J jnl
Lifetime estimation of analog circuits from the electrical characteristics of stressed MOSFETs.
Microelectron. Reliab.
Javier Martín-Martínez, Simone Gerardin, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Andrea Cester, Alessandro Paccagnella, G. Ghidini
2007 J jnl
Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror.
Microelectron. Reliab.
Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, James H. Stathis
2006 J jnl
FinFET and MOSFET preliminary comparison of gate oxide reliability.
Microelectron. Reliab.
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, Ben Kaczer, Guido Groeseneken
2005 J jnl
Breakdown spots of ultra-thin (EOT<1.5nm) HfO
Microelectron. Reliab.
X. Blasco, Montserrat Nafría, Xavier Aymerich, J. Pétry, Wilfried Vandervorst
2005 J jnl
Influence of oxide breakdown position and device aspect ratio on MOSFET's output characteristics.
Microelectron. Reliab.
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2005 J jnl
Pre- and post-BD electrical conduction of stressed HfO
Microelectron. Reliab.
Lidia Aguilera, Marc Porti, Montserrat Nafría, Xavier Aymerich
2004 J jnl
A new approach to the modeling of oxide breakdown on CMOS circuits.
Microelectron. Reliab.
Raul Fernández, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich
2004 J jnl
Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses.
Microelectron. Reliab.
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
2003 J jnl
Oxide conductivity increase during the progressive-breakdown of SiO2 gate oxides observed with C-AFM.
Microelectron. Reliab.
Marc Porti, Montserrat Nafría, Xavier Aymerich
2003 J jnl
Pre-breakdown noise in electrically stressed thin SiO
Microelectron. Reliab.
Marc Porti, S. Meli, Montserrat Nafría, Xavier Aymerich
2003 J jnl
The measurement of the tip current noise as a method to characterize the exposed area of coated ESTM tips.
IEEE Trans. Instrum. Meas.
Gabriel Abadal, Francesc Pérez-Murano, Núria Barniol, Xavier Aymerich
2002 J jnl
Conduction and Breakdown Behaviour of Atomic Force Microscopy Grown SiO
Microelectron. Reliab.
X. Blasco, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Characterising the surface roughness of AFM grown SiO
Microelectron. Reliab.
Daniel Hill, X. Blasco, Marc Porti, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Influence of a low field with opposite polarity to the stress on the degradation of 4.5 nm thick SiO
Microelectron. Reliab.
Rosana Rodríguez, Marc Porti, Montserrat Nafría, Xavier Aymerich
2001 J jnl
Local current fluctuations before and after breakdown of thin SiO
Microelectron. Reliab.
Marc Porti, X. Blasco, Montserrat Nafría, Xavier Aymerich, Alexander Olbrich, Bernd Ebersberger