Won-Ju Cho

17 papers Journal 17
YearRankTypeTitle / Venue / Authors
2024 J jnl
Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology.
Sensors
Yeong-Ung Kim, Won-Ju Cho
2023 J jnl
Pushing the Limits of Biosensing: Selective Calcium Ion Detection with High Sensitivity via High-k Gate Dielectric Engineered Si Nanowire Random Network Channel Dual-Gate Field-Effect Transistors.
Sensors
Tae-Hwan Hyun, Won-Ju Cho
2021 J jnl
Fully Transparent and Sensitivity-Programmable Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistor-Based Biosensor Platforms with Resistive Switching Memories.
Sensors
Hyeong-Un Jeon, Won-Ju Cho
2021 J jnl
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor.
Sensors
Seong-Kun Cho, Won-Ju Cho
2021 J jnl
Highly Sensitive and Transparent Urea-EnFET Based Point-of-Care Diagnostic Test Sensor with a Triple-Gate a-IGZO TFT.
Sensors
Seong-Kun Cho, Won-Ju Cho
2018 J jnl
Effect of microwave annealing on SOI MOSFETs: Post-metal annealing with low thermal budget.
Microelectron. Reliab.
Eun-Ki Hong, Won-Ju Cho
2018 J jnl
Effects of the compositional ratios of sputtering target on the device performance and instability in amorphous InGaZnO thin film transistors.
Microelectron. Reliab.
Hee Pyung Park, Sang Woo Kim, Joong-Won Shin, Won-Ju Cho, Jong Tae Park
2017 J jnl
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with ITO local conducting buried layer.
Microelectron. Reliab.
Sang Min Kim, Min-Soo Kang, Won-Ju Cho, Jong Tae Park
2017 J jnl
Reliability of amorphous InGaZnO TFTs with ITO local conducting buried layer for BEOL power transistors.
Microelectron. Reliab.
Hyun Jong Kim, Byung Sang Song, Won-Ju Cho, Jong Tae Park
2016 J jnl
Device instability of amorphous InGaZnO thin film transistors with transparent source and drain.
Microelectron. Reliab.
Sang Min Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park
2016 J jnl
Negative bias illumination stress instability in amorphous InGaZnO thin film transistors with transparent source and drain.
Microelectron. Reliab.
Jong Hoon Lee, Seul Ki Yu, Jae Won Kim, Min-Ju Ahn, Won-Ju Cho, Jong Tae Park
2012 J jnl
Comparative study of electrical instabilities in InGaZnO thin film transistors with gate dielectrics.
Microelectron. Reliab.
Seul Ki Lee, Sung Il Hong, Yeon Ho Lee, Se Won Lee, Won-Ju Cho, Jong Tae Park
2012 J jnl
Drain breakdown voltage: A comparison between junctionless and inversion mode p-channel MOSFETs.
Microelectron. Reliab.
Seung-Min Lee, Chong-Gun Yu, Seung Min Jeong, Won-Ju Cho, Jong Tae Park
2010 J jnl
NBTI and hot carrier effect of Schottky-barrier p-MOSFETs.
Microelectron. Reliab.
Jin-Young Kim, Jun-Seok Oh, Won-Ju Cho, Jong Tae Park
2009 J jnl
NBTI and hot carrier effect of SOI p-MOSFETs fabricated in strained Si SOI wafer.
Microelectron. Reliab.
Yong Woo Jeon, Dae Hyun Ka, Chong-Gun Yu, Won-Ju Cho, M. Saif Islam, Jong Tae Park
2008 J jnl
Electrical Characterization of Nano-Floating Gated Silicon-on-Insulator Memory with In
IEICE Trans. Electron.
Dong-Uk Lee, Seon Pil Kim, Tae Hee Lee, Eun Kyu Kim, Hyun-Mo Koo, Won-Ju Cho, Young-Ho Kim
2007 J jnl
Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs.
Microelectron. Reliab.
Sung Jun Jang, Dae Hyun Ka, Chong-Gun Yu, Kwan-Su Kim, Won-Ju Cho, Jong Tae Park