Wolfgang Gustin

13 papers Journal 8Unranked 5
YearRankTypeTitle / Venue / Authors
2024 — conf
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
IRPS
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
2023 — conf
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
IRPS
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
2022 — conf
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
IRPS
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
2018 — conf
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
ESSDERC
Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser
2018 J jnl
NBTI: Experimental investigation, physical modelling, circuit aging simulations and verification.
Microelectron. Reliab.
Christian Schlünder, Katja Puschkarsky, Gunnar Andreas Rott, Wolfgang Gustin, Hans Reisinger
2018 — conf
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
IRPS
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
2016 J jnl
Degradation and recovery of variability due to BTI.
Microelectron. Reliab.
Christian Schlünder, Jörg Berthold, Fabian Proebster, Andreas Martin, Wolfgang Gustin, Hans Reisinger
2014 J jnl
HCS degradation of 5 nm oxide high-voltage PLDMOS.
Microelectron. Reliab.
C. Olk, Stefano Aresu, R. Rudolf, M. Röhner, Wolfgang Gustin, E. Stein Von Kamienski
2014 J jnl
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab.
Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser
2012 J jnl
New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab.
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser
2008 J jnl
NBTI on smart power technologies: A detailed analysis of two concurrent effects using a re-examined on-the-fly technique.
Microelectron. Reliab.
Stefano Aresu, Reinhard Pufall, Michael Goroll, Wolfgang Gustin
2008 J jnl
New aspects for lifetime prediction of bipolar transistors in automotive power wafer technologies by using a power law fitting procedure.
Microelectron. Reliab.
Michael Goroll, Reinhard Pufall, Stefano Aresu, Wolfgang Gustin
2005 J jnl
Effects of inhomogeneous negative bias temperature stress on p-channel MOSFETs of analog and RF circuits.
Microelectron. Reliab.
Christian Schlünder, Ralf Brederlow, Benno Ankele, Wolfgang Gustin, Karl Goser, Roland Thewes