Wolfgang Goes

16 papers C 1Journal 2Unranked 13
YearRankTypeTitle / Venue / Authors
2024 — conf
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling.
DRC
Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
2024 — conf
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect.
MIPRO
Bernhard Pruckner, Nils Petter Jørstad, T. Hadámek, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
2024 — conf
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures.
MIPRO
Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
2023 — conf
Back-Hopping in Ultra-Scaled MRAM Cells.
MIPRO
Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
2023 — conf
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices.
ESSDERC
Viktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr
2022 — conf
Spin Torques in ULTRA-Scaled MRAM Devices.
ESSDERC
Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov
2022 — conf
Spin Transfer Torques in Ultra-Scaled MRAM Cells.
MIPRO
Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov
2021 — conf
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification.
IMW
Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin
2021 — conf
Finite Element Method Approach to MRAM Modeling.
MIPRO
Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr
2020 — conf
On the impact of mechanical stress on gate oxide trapping.
IRPS
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf
2019 — conf
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM.
ESSDERC
Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov
2018 J jnl
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab.
Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
2015 C conf
Characterization and modeling of reliability issues in nanoscale devices.
ISCAS
Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser
2015 — conf
On the volatility of oxide defects: Activation, deactivation, and transformation.
IRPS
Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
2014 — conf
Characterization and modeling of charge trapping: From single defects to devices.
ICICDT
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
2007 J jnl
VSP - A gate stack analyzer.
Microelectron. Reliab.
Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Goes, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr