Wim Schoenmaker

23 papers A* 1A 6Journal 15Unranked 1
YearRankTypeTitle / Venue / Authors
2018 J jnl
An index-aware parametric model order reduction method for parameterized quadratic differential-algebraic equations.
Appl. Math. Comput.
Nicodemus Banagaaya, Peter Benner, Lihong Feng, Peter Meuris, Wim Schoenmaker
2017 A* conf
Coupled circuit/EM simulation for radio frequency circuits.
DAC
Kai Bittner, Hans Georg Brachtendorf, Wim Schoenmaker, Pascal Reynier
2017 J jnl
Exploration of robustness limits and ESD EMI impact in a protection device for advanced CMOS technology.
Microelectron. Reliab.
Philippe Galy, Wim Schoenmaker
2016 J jnl
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential with stiffness reduction.
Int. J. Circuit Theory Appl.
Quan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong
2016 A conf
A new tightly-coupled transient electro-thermal simulation method for power electronics.
ICCAD
Quan Chen, Wim Schoenmaker
2016 J jnl
An Efficient Transient Electro-Thermal Simulation Framework for Power Integrated Circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Qinggao Mei, Wim Schoenmaker, Shih-Hung Weng, Hao Zhuang, Chung-Kuan Cheng, Quan Chen
2016 A conf
Holistic coupled field and circuit simulation.
DATE
Wim Schoenmaker, Peter Meuris, Christian Strohm, Caren Tischendorf
2016 A conf
Model Order Reduction for nanoelectronics coupled problems with many inputs.
DATE
Nicodemus Banagaaya, Lihong Feng, Wim Schoenmaker, Peter Meuris, Aarnout Wieers, Renaud Gillon, Peter Benner
2016 A conf
Shape optimization of a power MOS device under uncertainties.
DATE
Piotr Putek, Peter Meuris, Roland Pulch, E. Jan W. ter Maten, Michael Gunther, Wim Schoenmaker, Frederik Deleu, Aarnout Wieers
2015 J jnl
Coupled electro-magnetic field & Lorentz force effects in silicon and metal for ESD investigation in transient and harmonic regimes.
Microelectron. Reliab.
Philippe Galy, Wim Schoenmaker
2015 — conf
Integrated front-end/back-end simulation of electromagnetic fields, Lorentz force effects and fast current surges in microelectronic protection devices.
ICICDT
Wim Schoenmaker, Philippe Galy
2014 J jnl
Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Wim Schoenmaker, Quan Chen, Philippe Galy
2013 J jnl
A Numerically Efficient Formulation for Time-Domain Electromagnetic-Semiconductor Cosimulation for Fast-Transient Systems.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Quan Chen, Wim Schoenmaker, Guan-Hua Chen, Lijun Jiang, Ngai Wong
2012 A conf
A fast time-domain EM-TCAD coupled simulation framework via matrix exponential.
ICCAD
Quan Chen, Wim Schoenmaker, Shih-Hung Weng, Chung-Kuan Cheng, Guan-Hua Chen, Lijun Jiang, Ngai Wong
2012 A conf
Large signal simulation of integrated inductors on semi-conducting substrates.
DATE
Wim Schoenmaker, Michael Matthes, Bart De Smedt, Sascha Baumanns, Caren Tischendorf, Rick Janssen
2011 J jnl
An Effective Formulation of Coupled Electromagnetic-TCAD Simulation for Extremely High Frequency Onward.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Quan Chen, Wim Schoenmaker, Peter Meuris, Ngai Wong
2002 J jnl
Electromagnetic interconnects and passives modeling: softwareimplementation issues.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Wim Schoenmaker, Peter Meuris
2002 J jnl
Renormalization group meshes and the discretization of TCAD equations.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Wim Schoenmaker, Wim Magnus, Peter Meuris, Bert Maleszka
2001 J jnl
Measurement and Simulation of Boron Diffusivity in Strained Si
VLSI Design
K. G. Rajendran, Wim Schoenmaker
2001 J jnl
On the calculation of gate tunneling currents in ultra-thin metal-insulator-semiconductor capacitors.
Microelectron. Reliab.
Wim Magnus, Wim Schoenmaker
2001 J jnl
Strategy for electromagnetic interconnect modeling.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Peter Meuris, Wim Schoenmaker, Wim Magnus
1993 J jnl
Scaling considerations of the constitutive equations in a 2-D finite element heterojunction simulator PRISM.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Rudi C. Vankemmel, Wim Schoenmaker, Rudi Cartuyvels, Kristin M. De Meyer
1990 J jnl
AlGaAs/GaAs: High electron mobility transistor simulations with PRISM.
Eur. Trans. Telecommun.
Philippe Jansen, N. Maene, Walter De Raedt, S. Naten, D. Stubbe, Wim Schoenmaker, M. Van Rossum, Kristin M. De Meyer