William Vandendaele

12 papers Journal 1Unranked 11

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Fast CV MSM Technique for Comprehensive Analysis of Bulk Trapping in Low-K Carbon-Doped Dielectrics. IRPS Tadeu Mota Frutuoso, William Vandendaele, A. Bond, F. Bringuier, V. Lapras, Marie Claire Cyrille, Claire Fenouillet-Béranger, B. Duriez, Xavier Garros
2025	—	`conf`	Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETs. IRPS Abygaël Viey, William Vandendaele, P. Kouaté Wafo, Xavier Garros, Luigi Basset, F. Ponthenier, Joris Lacord, R. Fillon, X. Federspiel, D. Roy, S. Joblot, Dominique Golanski
2024	—	`conf`	Breakthrough Processes for Si CMOS Devices with BEOL Compatibility for 3D Sequential Integrated more than Moore Analog Applications. VLSI Technology and Circuits Daphnée Bosch, Abygaël Viey, Tadeu Mota Frutuoso, P. Lheritier, C. Licitra, Nada Zerhouni, A. Albouy, Laurent Brunet, A. Magalhaes-Lucas, L. M. B. da Silva, H. Boutry, M. Husien Fahmy Taha Abdelrahman, F. Cristiano, R. Gassilloud, M. Ribotta, G. Romano, William Vandendaele, V. Benevent, Mathieu Opprecht, S. Kerdilès, F. Milesi, F. Mazen, Benoit Sklénard, C. Euvrard-Colnat, Johannes Sturm, Amélie Lambert, C. Candebage, L. Laraignou, François Boulard, A. Sarrazin, M. de Souza, Christoforos G. Theodorou, Xavier Garros, Perrine Batude
2023	—	`conf`	Drain voltage impact on charge redistribution in GaN-on-Si E-mode MOSc-HEMTs. IRPS Camille Leurquin, William Vandendaele, Romain Gwoziecki, B. Mohamad, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant
2023	—	`conf`	Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited). IRPS William Vandendaele, Camille Leurquin, R. Lavieville, Marie-Anne Jaud, Abygaël Viey, Romain Gwoziecki, B. Mohamad, Etienne Nowak, Aurore Constant, Ferdinando Iucolano
2022	—	`conf`	Novel High Voltage Bias Temperature Instabilities (HV-BTI) setup to monitor RON/VTH drift on GaN-on-Si E-mode MOSc-HEMTs under drain voltage. IRPS Camille Leurquin, William Vandendaele, Aby-Gaël Viey, Romain Gwoziecki, René Escoffier, R. Salot, Ghislain Despesse, Ferdinando Iucolano, Roberto Modica, Aurore Constant
2021	—	`conf`	Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. ESSDERC Bledion Rrustemi, Aby-Gaël Viey, Marie-Anne Jaud, François Triozon, William Vandendaele, Charles Leroux, Jacques Cluzel, S. Martin, Cyrille Le Royer, Romain Gwoziecki, Roberto Modica, Ferdinando Iucolano, Fred Gaillard, Thierry Poiroux, Gérard Ghibaudo
2021	—	`conf`	Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Jean Coignus, Jacques Cluzel, Alexis Krakovinsky, Simon Martin, Jérome Biscarrat, Romain Gwoziecki, Veronique Sousa, Fred Gaillard, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso, Gérard Ghibaudo
2019	—	`conf`	Influence of Gate Length on pBTI in GaN-on-Si E-Mode MOSc-HEMT. IRPS Aby-Gaël Viey, William Vandendaele, Marie-Anne Jaud, Romain Gwoziecki, Alphonse Torres, Marc Plissonnier, Fred Gaillard, Gérard Ghibaudo, Roberto Modica, Ferdinando Iucolano, Matteo Meneghini, Gaudenzio Meneghesso
2018	—	`conf`	A novel insight of pBTI degradation in GaN-on-Si E-mode MOSc-HEMT. IRPS William Vandendaele, Xavier Garros, Thomas Lorin, Erwan Morvan, Alphonse Torres, René Escoffier, Marie-Anne Jaud, Marc Plissonnier, Fred Gaillard
2018	J	`jnl`	Study of forward AC stress degradation of GaN-on-Si Schottky diodes. Microelectron. Reliab. Thomas Lorin, William Vandendaele, Romain Gwoziecki, Charlotte Gillot, Jérome Biscarrat, Gérard Ghibaudo, Fred Gaillard
2017	—	`conf`	On the understanding of cathode related trapping effects in GaN-on-Si Schottky diodes. ESSDERC William Vandendaele, Thomas Lorin, Romain Gwoziecki, Yannick Baines, Jérome Biscarrat, Marie-Anne Jaud, Charlotte Gillot, Matthew Charles, Marc Plissonnier, Gilles Reimbold