Werner Simbürger

22 papers B 2Journal 10Unranked 10
YearRankTypeTitle / Venue / Authors
2018 — conf
A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOS.
BCICTS
Vadim Issakov, Sebastian Kehl-Waas, Radu Ciocoveanu, Werner Simbürger, Angelika Geiselbrechtinger
2016 J jnl
Transient voltage suppressors - technologies and characteristics.
Elektrotech. Informationstechnik
Werner Simbürger, Joost A. Willemen, Vadim Vendt, Thomas Schwingshackl, Antoine D'Arbonneau
2015 J jnl
ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping technique.
Microelectron. Reliab.
Matteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany
2011 J jnl
On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP).
Microelectron. Reliab.
Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher
2010 J jnl
System ESD robustness by co-design of on-chip and on-board protection measures.
Microelectron. Reliab.
Harald Gossner, Werner Simbürger, Matthias Stecher
2009 J jnl
Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS.
IET Circuits Devices Syst.
Vadim Issakov, Domagoj Siprak, Marc Tiebout, Andreas Thiede, Werner Simbürger, Linus Maurer
2009 — conf
Low-noise ESD-protected 24 GHz receiver for radar applications in SiGe: C technology.
ESSCIRC
Vadim Issakov, Herbert Knapp, Filippo Magrini, Andreas Thiede, Werner Simbürger, Linus Maurer
2009 — conf
Merged power amplifier and mixer circuit topology for radar applications in CMOS.
ESSCIRC
Vadim Issakov, Marc Tiebout, Herbert Knapp, Yiqun Cao, Werner Simbürger
2007 — conf
A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive Radar.
ISSCC
Saverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz
2007 J jnl
An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar Technology.
IEEE J. Solid State Circuits
Saverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz
2007 — conf
An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS Technology.
ISSCC
Marcin K. Augustyniak, W. Weber, Gottfried Beer, Hans Mulatz, L. Elbrecht, H.-J. Timme, Marc Tiebout, Werner Simbürger, Christian Paulus, Björn Eversmann, Doris Schmitt-Landsiedel, Roland Thewes, Ralf Brederlow
2007 — conf
Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technology.
ESSCIRC
Saverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz
2004 J jnl
A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-Ω output.
IEEE J. Solid State Circuits
Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz
2004 — conf
A low-power low-voltage NMOS bulk-mixer with 20 GHz bandwidth in 90 nm CMOS.
ISCAS (4)
Christoph Kienmayer, Marc Tiebout, Werner Simbürger, Arpad L. Scholtz
2004 J jnl
Voltage-controlled oscillators up to 98 GHz in SiGe bipolar technology.
IEEE J. Solid State Circuits
Werner Perndl, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Werner Simbürger, Arpad L. Scholtz
2003 — conf
A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω output.
ESSCIRC
Winfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz
2002 — conf
A monolithic 2.45 GHz, 0.56 W power amplifier with 45% PAE at 2.4 V in standard 25 GHz f
ISCAS (4)
Winfried Bakalski, Werner Simbürger, Daniel Kehrer, Hans-Dieter Wohlmuth, Mirjana Rest, Arpad L. Scholtz
2001 J jnl
A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHz.
IEEE J. Solid State Circuits
Hans-Dieter Wohlmuth, Werner Simbürger
2001 — conf
Modeling of monolithic lumped planar transformers up to 20 GHz.
CICC
Daniel Kehrer, Werner Simbürger, Hans-Dieter Wohlmuth, Arpad L. Scholtz
1999 J jnl
A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHz.
IEEE J. Solid State Circuits
Werner Simbürger, Hans-Dieter Wohlmuth, Peter Weger, Alexander Heinz
1994 B conf
Personal communications transceiver architectures for monolithic integration.
PIMRC
Ernst Bonek, Gerhard Schultes, Peter Kreuzgruber, Werner Simbürger, Peter Weger, T. C. Leslie, J. Popp, Herbert Knapp, N. Rohringer
1992 B conf
A testbed for DECT physical- and medium access-layer.
PIMRC
Gerhard Schultes, Arpad L. Scholtz, Martin Happel, Werner Simbürger