Wenwu Wang

15 papers Journal 5Unranked 10
YearRankTypeTitle / Venue / Authors
2025 — conf
Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer.
IRPS
Runhao Han, Jia Yang, Tao Hu, Mingkai Bai, Yajing Ding, Xianzhou Shao, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang, Tianchun Ye
2025 — conf
NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma Treatment.
IRPS
Songyi Jiang, Junjie Li, Hong Yang, Qianqian Liu, Yunfei Shi, Shuai Yang, Runsheng Wang, Xiaolei Wang, Jun Luo, Wenwu Wang
2025 — conf
Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors.
IRPS
Liang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang
2024 J jnl
Development of an Algorithm for the Simultaneous Retrieval of Cloud-Top Height and Cloud Optical Thickness Combining Radiative Transfer and Multisource Satellite Information From O₄ Hyperspectral Measurements.
IEEE Trans. Geosci. Remote. Sens.
Wenwu Wang, Chong Shi, Huazhe Shang, Shuai Yin, Jian Xu, Na Xu, Lin Chen, Husi Letu
2024 — conf
Role of Nitrogen in Suppressing Interfacial States Generation and Improving Endurance in Ferroelectric Field Effect Transistors.
IMW
Saifei Dai, Songwei Li, Shuangshuang Xu, Fengbin Tian, Junshuai Chai, Jiahui Duan, Wenjuan Xiong, Jinjuan Xiang, Yanrong Wang, Hao Xu, Jing Zhang, Xiaolei Wang, Wenwu Wang
2023 — conf
Comprehensive Study of Endurance Fatigue in the Scaled Si FeFET by in-situ Vth Measurement and Endurance Enhancement Strategy.
IMW
Xianzhou Shao, Junshuai Chai, Min Liao, Jiahui Duan, Fengbin Tian, Xiaoyu Ke, Xiaoqing Sun, Hao Xu, Jinjuan Xiang, Xiaolei Wang, Wenwu Wang
2023 J jnl
Ultralow-Power Compact Artificial Synapse Based on a Ferroelectric Fin Field-Effect Transistor for Spatiotemporal Information Processing.
Adv. Intell. Syst.
Zhaohao Zhang, Guohui Zhan, Weizhuo Gan, Yan Cheng, Xumeng Zhang, Yue Peng, Jianshi Tang, Fan Zhang, Jiali Huo, Gaobo Xu, Qingzhu Zhang, Zhenhua Wu, Yan Liu, Hangbing Lv, Qi Liu, Genquan Han, Huaxiang Yin, Jun Luo, Wenwu Wang
2022 — conf
Investigation on Contacts Thermal Stability for 3D Sequential Integration.
IRPS
S. J. Mao, J. B. Liu, Y. Wang, W. B. Liu, Y. P. Hu, H. W. Cui, R. Zhang, H. C. Liu, Z. X. Wang, N. Zhou, Y. K. Zhang, Hong Yang, Zhenhua Wu, Yongliang Li, J. F. Gao, Anyun Du, Junfeng Li, Jun Luo, Wenwu Wang, Huaxiang Yin
2022 — conf
Vertical Channel-All-Around (CAA) IGZO FET under 50 nm CD with High Read Current of 32.8 μA/μm (Vth + 1 V), Well-performed Thermal Stability up to 120 ℃ for Low Latency, High-density 2T0C 3D DRAM Application.
VLSI Technology and Circuits
Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, Ling Li, Ming Liu
2021 — conf
A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETs.
IRPS
Longda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang
2021 — conf
Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETs.
IRPS
Hao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang
2020 — conf
Comparative Study on the Energy Profile of NBTI-Related Defects in Si and Ferroelectric p-FinFETs.
IRPS
Longda Zhou, Qingzhu Zhang, Hong Yang, Zhigang Ji, Zhaohao Zhang, Renren Xu, Huaxiang Yin, Wenwu Wang
2020 J jnl
Influence of an ALD TiN capping layer on the PBTI characteristics of n-FinFET with ALD HfO
Sci. China Inf. Sci.
Hong Yang, Luwei Qi, Yanbo Zhang, Bo Tang, Qianqian Liu, Hao Xu, Xueli Ma, Xiaolei Wang, Yongliang Li, Huaxiang Yin, Junfeng Li, Huilong Zhu, Chao Zhao, Wenwu Wang, Tianchun Ye
2020 J jnl
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors.
Sci. China Inf. Sci.
Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang
2016 J jnl
Accurate lifetime prediction for channel hot carrier stress on sub-1 nm equivalent oxide thickness HK/MG nMOSFET with thin titanium nitride capping layer.
Microelectron. Reliab.
Weichun Luo, Hong Yang, Wenwu Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Hao Xu, Yanrong Wang, Luwei Qi, Jiang Yan, Huilong Zhu, Chao Zhao, Dapeng Chen, Tianchun Ye