Wensuo Chen

12 papers Journal 12
YearRankTypeTitle / Venue / Authors
2026 J jnl
A PSRR enhanced capacitorless LDO with gate capacitance cancellation technique.
Integr.
Hang Shu, Pengfei Liao, Yong Tao, Wensuo Chen
2026 J jnl
A novel P/N-drift reverse-conducting IGBT with P-layer structure at the trench bottom.
Microelectron. J.
Zhigang Shen, Wensuo Chen
2025 J jnl
A Fast Response FVF-Based Output-Capacitorless LDO with Super Source Follower and High-Pass Network Integration.
Circuits Syst. Signal Process.
Hang Shu, Pengfei Liao, Haiqing Peng, Wensuo Chen
2024 J jnl
A Novel Trench MOS Barrier Schottky Contact Super Barrier Rectifier.
IEICE Trans. Electron.
Peijian Zhang, Kunfeng Zhu, Wensuo Chen
2024 J jnl
A transient-enhanced output-capacitorless LDO regulator with non-inverting pull-push gain stage.
Microelectron. J.
Hang Shu, Pengfei Liao, Haiqing Peng, Wensuo Chen
2024 J jnl
Comprehensive experimental study on Schottky contact super barrier rectifier.
Microelectron. J.
Qisheng Yu, Zhengyuan Zhang, Aohang Zhang, Jiaweiwen Huang, Wensuo Chen
2024 J jnl
Design and investigation of double-RESURF SOI-LIGBT with carrier-storage layer in P-top.
Microelectron. J.
Zhigang Shen, Pengfei Liao, Qisheng Yu, Jiaweiwen Huang, Aohang Zhang, Wensuo Chen
2024 J jnl
Novel fast-switching P-poly trench collector reverse conducting IGBT with different N-buffer position.
Microelectron. J.
Yuying Wang, Zhengyuan Zhang, Peng Jian, Pengfei Liao, Aohang Zhang, Kunfeng Zhu, Wensuo Chen
2024 J jnl
Novel low loss dual-trench superjunction IGBT with semi-floating P-pillar.
Microelectron. J.
Zhigang Shen, Wensuo Chen
2024 J jnl
Novel superjunction Fin-based NiO/β-Ga2O3 HJFET with additional surface drift region channels for record-high performance.
Microelectron. J.
Jiaweiwen Huang, Wensuo Chen, Shenglei Zhao, Qisheng Yu, Aohang Zhang, Kunfeng Zhu, Jian Li
2022 J jnl
A snapback-free and fast-switching planar-gate SOI LIGBT with three electron extracting channels.
IEICE Electron. Express
Yuying Wang, Aohang Zhang, Peng Jian, Wensuo Chen
2017 J jnl
A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels.
Microelectron. Reliab.
Peijian Zhang, Xue Wu, Qianning Yi, Wensuo Chen, Yonghui Yang, Kunfeng Zhu, Kaizhou Tan, Yi Zhong