Wei Xu

13 papers A* 1A 3C 1Journal 7Unranked 1
YearRankTypeTitle / Venue / Authors
2013 J jnl
Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs.
IEEE Trans. Very Large Scale Integr. Syst.
Yangyang Pan, Yiran Li, Hongbin Sun, Wei Xu, Nanning Zheng, Tong Zhang
2013 J jnl
Using Multilevel Phase Change Memory to Build Data Storage: A Time-Aware System Design Perspective.
IEEE Trans. Computers
Qi Wu, Fei Sun, Wei Xu, Tong Zhang
2012 J jnl
A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme.
IEEE J. Solid State Circuits
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
2012 J jnl
Using Magnetic RAM to Build Low-Power and Soft Error-Resilient L1 Cache.
IEEE Trans. Very Large Scale Integr. Syst.
Hongbin Sun, Chuanyin Liu, Wei Xu, Jizhong Zhao, Nanning Zheng, Tong Zhang
2011 J jnl
A Time-Aware Fault Tolerance Scheme to Improve Reliability of Multilevel Phase-Change Memory in the Presence of Significant Resistance Drift.
IEEE Trans. Very Large Scale Integr. Syst.
Wei Xu, Tong Zhang
2011 J jnl
Design of Last-Level On-Chip Cache Using Spin-Torque Transfer RAM (STT RAM).
IEEE Trans. Very Large Scale Integr. Syst.
Wei Xu, Hongbin Sun, Xiaobin Wang, Yiran Chen, Tong Zhang
2010 A conf
A nondestructive self-reference scheme for Spin-Transfer Torque Random Access Memory (STT-RAM).
DATE
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
2010 A conf
Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM.
ISLPED
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
2010 J jnl
Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search Speed.
IEEE Trans. Very Large Scale Integr. Syst.
Wei Xu, Tong Zhang, Yiran Chen
2010 — conf
Using time-aware memory sensing to address resistance drift issue in multi-level phase change memory.
ISQED
Wei Xu, Tong Zhang
2009 A conf
Data manipulation techniques to reduce phase change memory write energy.
ISLPED
Wei Xu, Jibang Liu, Tong Zhang
2009 A* conf
Improving STT MRAM storage density through smaller-than-worst-case transistor sizing.
DAC
Wei Xu, Yiran Chen, Xiaobin Wang, Tong Zhang
2008 C conf
Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin.
ISCAS
Wei Xu, Tong Zhang, Yiran Chen