Wataru Saito

20 papers Journal 11Unranked 9
YearRankTypeTitle / Venue / Authors
2025 J jnl
A Low Noise 8.3-Mpixel CMOS Image Sensor With Selectable Multiple Sampling Technique by 5.36 GHz Global Counter and Dual Latch Skew Canceler.
IEEE Trans. Circuits Syst. I Regul. Pap.
Yoichi Iizuka, Akihide Maezono, Wataru Saito, Kazuhiko Takami, Fukashi Morishita
2025 — conf
Design of a Battery Charger Boost Converter for Extremely Low Supply Voltages Below 10 mV in Energy Harvesting: A Return-on-Investment Approach.
NewCAS
Wataru Saito, Toru Tanzawa
2024 — conf
A Compact Optical Image Stabilization Chip with Actuator Trackability Improvement Controller and Double Offset Cancel Hall Amplifier to Improve Camera Shake Correction.
A-SSCC
Wataru Saito, Yoichi Iizuka, Tetsuya Takahashi, Toshiya Suzuki, Hiroto Suzuki, Masatomo Shoji, Fukashi Morishita
2024 J jnl
Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN).
IEEE Access
Thatree Mamee, Zaiqi Lou, Katsuhiro Hata, Makoto Takamiya, Takayasu Sakurai, Shinichi Nishizawa, Wataru Saito
2023 — conf
A Low Noise 8Mpixel CMOS Image Sensor with 5.36GHz Global Counter and Dual Latch Skew Canceler for Surveillance AI Camera System.
A-SSCC
Yoichi Iizuka, Akihide Maezono, Wataru Saito, Atsushi Yamane, Kazuhiko Takami, Fukashi Morishita
2023 J jnl
IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control.
IEEE Access
Zaiqi Lou, Thatree Mamee, Katsuhiro Hata, Makoto Takamiya, Shinichi Nishizawa, Wataru Saito
2022 J jnl
A 30.2-µ Vrms Horizontal Streak Noise 8.3-Mpixel 60-Frames/s CMOS Image Sensor With Skew-Relaxation ADC and On-Chip Testable Ramp Generator for Surveillance Camera.
IEEE J. Solid State Circuits
Fukashi Morishita, Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Masao Ito
2022 — conf
Accelerating the Recovery of p-Gate GaN HEMTs after Overvoltage Stresses.
IRPS
Joseph P. Kozak, Qihao Song, Jingcun Liu, Ruizhe Zhang, Qiang Li, Wataru Saito, Yuhao Zhang
2022 — conf
GaN MIS-HEMTs in Repetitive Overvoltage Switching: Parametric Shift and Recovery.
IRPS
Qihao Song, Joseph P. Kozak, Yunwei Ma, Jingcun Liu, Ruizhe Zhang, Roman Volkov, Daniel Sherman, Kurt V. Smith, Wataru Saito, Yuhao Zhang
2022 J jnl
High Accuracy Test Techniques with Fine Pattern Generator and Ramp Test Circuit for CMOS Image Sensor.
IEICE Trans. Electron.
Fukashi Morishita, Wataru Saito, Norihito Kato, Yoichi Iizuka, Masao Ito
2021 — conf
A Low Noise and Linearity Improvement CMOS Image Sensor for Surveillance Camera with Skew-Relaxation Local Multiply Circuit and On-Chip Testable Ramp Generator.
A-SSCC
Wataru Saito, Yoichi Iizuka, Norihito Kato, Ryota Otake, Fukashi Morishita
2020 — conf
An ADC Test Technique With Dual-Path/Multi-Functional Fine Pattern Generator Realizing High Accuracy Measurement for CMOS Image Sensor.
ATS
Fukashi Morishita, Masanori Otsuka, Wataru Saito
2019 — conf
Switching of 3300V Scaled IGBT by 5V Gate Drive.
ASICON
Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa
2017 — conf
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat).
ASICON
Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai
2017 J jnl
Modeling of Field-Plate Effect on Gallium-Nitride-Based High Electron Mobility Transistors for High-Power Applications.
IEICE Trans. Electron.
Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, Hans Jürgen Mattausch
2017 J jnl
Relation between UIS withstanding capability and I-V characteristics in high-voltage GaN-HEMTs.
Microelectron. Reliab.
Wataru Saito, Toshiyuki Naka
2016 J jnl
UIS test of high-voltage GaN-HEMTs with p-type gate structure.
Microelectron. Reliab.
Wataru Saito, Toshiyuki Naka
2015 J jnl
Breakdown behaviour of high-voltage GaN-HEMTs.
Microelectron. Reliab.
Wataru Saito, Takeshi Suwa, Takeshi Uchihara, Toshiyuki Naka, Taichi Kobayashi
2015 J jnl
Comprehensive 2D-carrier profiling of low-doping region by high-sensitivity scanning spreading resistance microscopy (SSRM) for power device applications.
Microelectron. Reliab.
Li Zhang, Mitsuo Koike, Mizuki Ono, Shogo Itai, Kazuya Matsuzawa, Syotaro Ono, Wataru Saito, Masakazu Yamaguchi, Yohei Hayase, Keiryo Hara
2015 J jnl
Destruction failure analysis and international reliability test standard for power devices.
Microelectron. Reliab.
Takashi Setoya, Tsuneo Ogura, Wataru Saito, Tomoko Matsudai, Koichi Endo