Vittorio Romano

28 papers A 2B 1Journal 24Unranked 1

Year	Rank	Type	Title / Venue / Authors
2024	A	`conf`	AMBEATion: Analog Mixed-Signal Back-End Design Automation with Machine Learning and Artificial Intelligence Techniques. DATE Giulia Elena Aliffi, Joao Baixinho, Dalibor Barri, Francesco Daghero, Nicola Di Carolo, Gabriele Faraone, Michelangelo Grosso, Daniele Jahier Pagliari, Jiri Jakovenko, Vladimír Janícek, Dario Licastro, Vazgen Melikyan, Matteo Risso, Vittorio Romano, Eugenio Serianni, Martin Stastný, Patrik Vacula, Giorgia Vitanza, Chen Xie
2024	J	`jnl`	Optimal control of a semiclassical Boltzmann equation for charge transport in graphene. Commun. Nonlinear Sci. Numer. Simul. Giovanni Nastasi, Alfio Borzì, Vittorio Romano
2024	J	`jnl`	Uncertainty quantification for charge transport in GNRs through particle Galerkin methods for the semiclassical Boltzmann equation. CoRR Andrea Medaglia, Giovanni Nastasi, Vittorio Romano, Mattia Zanella
2024	J	`jnl`	Wigner Equations for Phonons Transport and Quantum Heat Flux. J. Nonlinear Sci. Vito Dario Camiola, Vittorio Romano, Giorgia Vitanza
2021	J	`jnl`	About the Definition of the Local Equilibrium Lattice Temperature in Suspended Monolayer Graphene. Entropy Marco Coco, Giovanni Mascali, Vittorio Romano
2021	J	`jnl`	Correction: Camiola, V.D., et al. Equilibrium Wigner Function for Fermions and Bosons in the Case of a General Energy Dispersion Relation. Entropy 2020, 22, 1023. Entropy Vito Dario Camiola, Liliana Luca, Vittorio Romano
2020	J	`jnl`	A full coupled drift-diffusion-Poisson simulation of a GFET. Commun. Nonlinear Sci. Numer. Simul. Giovanni Nastasi, Vittorio Romano
2020	J	`jnl`	Equilibrium Wigner Function for Fermions and Bosons in the Case of a General Energy Dispersion Relation. Entropy Vito Dario Camiola, Liliana Luca, Vittorio Romano
2018	J	`jnl`	Enhancing quantum efficiency of thin-film silicon solar cells by Pareto optimality. J. Glob. Optim. Andrea Patanè, Andrea Santoro, Vittorio Romano, Antonino La Magna, Giuseppe Nicosia
2017	J	`jnl`	Charge Transport in Graphene including Thermal Effects. SIAM J. Appl. Math. Giovanni Mascali, Vittorio Romano
2017	J	`jnl`	Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors. Entropy Giovanni Mascali, Vittorio Romano
2017	J	`jnl`	Multi-objective optimization and analysis for the design space exploration of analog circuits and solar cells. Eng. Appl. Artif. Intell. Andrea Patanè, Andrea Santoro, Piero Conca, Giovanni Carapezza, Antonino La Magna, Vittorio Romano, Giuseppe Nicosia
2015	J	`jnl`	DSMC method consistent with the Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene. J. Comput. Phys. Vittorio Romano, Armando Majorana, Marco Coco
2013	J	`jnl`	2DEG-3DEG Charge Transport Model for MOSFET Based on the Maximum Entropy Principle. SIAM J. Appl. Math. Vito Dario Camiola, Vittorio Romano
2013	J	`jnl`	Semiconductor device design using the BiMADS algorithm. J. Comput. Phys. Giovanni Stracquadanio, Vittorio Romano, Giuseppe Nicosia
2013	J	`jnl`	Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle. Math. Comput. Model. Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
2012	J	`jnl`	A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle. Math. Comput. Model. Giovanni Mascali, Vittorio Romano
2011	J	`jnl`	A hydrodynamical model for holes in silicon semiconductors: The case of non-parabolic warped bands. Math. Comput. Model. Giovanni Mascali, Vittorio Romano
2010	—	`conf`	An Immunological Algorithm for Doping Profile Optimization in Semiconductors Design. ICARIS Giovanni Stracquadanio, Concetta Drago, Vittorio Romano, Giuseppe Nicosia
2010	B	`conf`	Effective design of semiconductor devices using evolutionary-based derivative free optimization. IEEE Congress on Evolutionary Computation Giovanni Stracquadanio, Concetta Drago, Vittorio Romano, Giuseppe Nicosia
2010	A	`conf`	Multi-objective optimization of doping profile in semiconductor design. GECCO Giovanni Stracquadanio, Concetta Drago, Vittorio Romano, Giuseppe Nicosia
2009	J	`jnl`	Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case. SIAM J. Appl. Math. Salvatore La Rosa, Giovanni Mascali, Vittorio Romano
2007	J	`jnl`	2D numerical simulation of the MEP energy-transport model with a finite difference scheme. J. Comput. Phys. Vittorio Romano
2001	J	`jnl`	Simulation of Submicron Silicon Diodes with a Non-Parabolic Hydrodynamical Model Based on the Maximum Entropy Principle. VLSI Design Orazio Muscato, Vittorio Romano
2000	J	`jnl`	Central Schemes for Balance Laws of Relaxation Type. SIAM J. Numer. Anal. Salvatore Fabio Liotta, Vittorio Romano, Giovanni Russo
2000	J	`jnl`	Extended Hydrodynamical Model of Carrier Transport in Semiconductors. SIAM J. Appl. Math. Angelo Marcello Anile, Giovanni Russo, Vittorio Romano
2000	J	`jnl`	Moment Equations with Maximum Entropy Closure for Carrier Transport in Semiconductor Devices: Validation in Bulk Silicon. VLSI Design Angelo Marcello Anile, Orazio Muscato, Vittorio Romano
1998	J	`jnl`	Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors. VLSI Design Angelo Marcello Anile, Vittorio Romano, Giovanni Russo