Vincenzo Della Marca

12 papers C 1Journal 3Unranked 8
YearRankTypeTitle / Venue / Authors
2023 — conf
40nm SONOS Embedded Select in Trench Memory.
ESSDERC
Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa
2021 — conf
A Regulated Sensing Solution Based on a Self-reference Principle for PCM + OTS Memory Array.
VLSI-SoC (Selected Papers)
J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, Jean-Michel Walder, Jean-Michel Portal
2021 C conf
A Self-referenced and regulated sensing solution for PCM with OTS selector.
VLSI-SoC
J. Gasquez, Bastien Giraud, P. Boivin, Y. Moustapha-Rabault, Vincenzo Della Marca, Jean-Pierre Walder, Jean-Michel Portal
2021 — conf
Benchmarking and optimization of trench-based multi-gate transistors in a 40 nm non-volatile memory technology.
DTIS
Romeric Gay, Vincenzo Della Marca, Hassen Aziza, Arnaud Régnier, Stephan Niel, Abderrezak Marzaki
2021 — conf
Hot Electron Source Side Injection Comprehension in 40nm eSTM™.
IMW
Franck Melul, Thibault Kempf, Vincenzo Della Marca, Marc Bocquet, Madjid Akbal, Frederique Trenteseaux, Marc Mantelli, Arnaud Régnier, Stephan Niel, Francesco La Rosa
2020 — conf
AC stress reliability study of a new high voltage transistor for logic memory circuits.
IRPS
Jordan Locati, Vincenzo Della Marca, Christian Rivero, Arnaud Régnier, Stephan Niel, Karine Coulié
2019 — conf
True random number generation exploiting SET voltage variability in resistive RAM memory arrays.
NVMTS
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
2018 J jnl
Quantitative correlation between Flash and equivalent transistor for endurance electrical parameters extraction.
Microelectron. Reliab.
Vincenzo Della Marca, Jérémy Postel-Pellerin, Thibault Kempf, Arnaud Régnier, Philippe Chiquet, Marc Bocquet
2018 — conf
Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip.
IRPS
Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson
2014 J jnl
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories.
Microelectron. Reliab.
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
2013 — conf
Effect of ions presence in the SiOCH inter metal dielectric structure.
ESSDERC
Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont
2012 J jnl
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability.
J. Low Power Electron.
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson