Umesh K. Mishra

22 papers Journal 9Unranked 13

Year	Rank	Type	Title / Venue / Authors
2026	—	`conf`	28.1 Importance of GaN for 5G and Solid-State mm-Wave Circuits of the Future. ISSCC Umesh K. Mishra, Christopher J. Clymore, Emre Akso, Matthew Guidry
2025	—	`conf`	A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and Qualification. IRPS Christopher J. Clymore, Matthew Guidry, Boyu Wang, Emre Akso, Henry Collins, Robert Hamwey, Nirupam Hatui, Stacia Keller, Umesh K. Mishra
2024	—	`conf`	Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. IRPS Marco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra
2024	—	`conf`	Self-aligned Scaled Planar N-polar GaN HEMTs with Raised Regrowth. DRC Boyu Wang, Kamruzzaman Khan, Emre Akso, Henry Collins, Tanmay Chavan, Matthew Guidry, Umesh K. Mishra
2023	J	`jnl`	Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply. Proc. IEEE Umesh K. Mishra
2023	—	`conf`	Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz. DRC Emre Akso, Christopher Clymore, Wenjian Liu, Henry Collins, Brian Romanczyk, Weiyi Li, Nirupam Hatui, Christian Wurm, Stacia Keller, Matthew Guidry, Umesh K. Mishra
2022	—	`conf`	Short-Circuit Capability with GaN HEMTs : Invited. IRPS Davide Bisi, Bill Cruse, Philip Zuk, Primit Parikh, Umesh K. Mishra, Tsutomu Hosoda, Masamichi Kamiyama, Masahito Kanamura
2021	—	`conf`	Role of the AlGaN Cap Layer on the Trapping Behaviour of N-Polar GaN MISHEMTs. IRPS Francesca Chiocchetta, Claudia Calascione, Carlo De Santi, Chandan Sharma, Fabiana Rampazzo, Xun Zheng, Brian Romanczyk, Matthew Guidry, Haoran Li, Stacia Keller, Umesh K. Mishra, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni
2020	—	`conf`	A Novel Concept using Derivative Superposition at the Device-Level to Reduce Linearity Sensitivity to Bias in N-polar GaN MISHEMT. DRC Pawana Shrestha, Matthew Guidry, Brian Romanczyk, Rohit R. Karnaty, Nirupam Hatui, Christian Wurm, Athith Krishna, Shubhra S. Pasayat, Stacia Keller, James F. Buckwalter, Umesh K. Mishra
2020	—	`conf`	Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. DRC Wenjian Liu, Islam Sayed, Brian Romanczyk, Nirupam Hatui, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra
2019	—	`conf`	Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs). IRPS Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury
2019	—	`conf`	Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junction. DRC Shalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra
2019	—	`conf`	Virtual-Source Modeling of N-polar GaN MISHEMTS. BCICTS Rohit R. Karnaty, Umesh K. Mishra, James F. Buckwalter, Matthew Guidry, Pawana Shrestha, Brian Romanczyk, Nirupam Hatui, Xun Zheng, Christian Wurm, Haoran Li, Stacia Keller
2015	—	`conf`	Commercialization and reliability of 600 V GaN power switches. IRPS Toshihide Kikkawa, Tsutomu Hosoda, Ken Shono, Kenji Imanishi, Yoshimori Asai, Yifeng Wu, Likun Shen, Kurt Smith, Dixie Dunn, Saurabh Chowdhury, Peter Smith, John Gritters, Lee McCarthy, Ronald Barr, Rakesh Lal, Umesh K. Mishra, Primit Parikh
2011	J	`jnl`	1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH Microelectron. Reliab. Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
2011	J	`jnl`	AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. Microelectron. Reliab. Martin Kuball, Milan Tapajna, Richard J. T. Simms, Mustapha Faqir, Umesh K. Mishra
2008	J	`jnl`	GaN-Based RF Power Devices and Amplifiers. Proc. IEEE Umesh K. Mishra, Likun Shen, Thomas E. Kazior, Yifeng Wu
2006	J	`jnl`	Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck
2002	J	`jnl`	AlGaN/GaN HEMTs-an overview of device operation and applications. Proc. IEEE Umesh K. Mishra, Primit Parikh, Yifeng Wu
2000	J	`jnl`	Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers. IEEE J. Solid State Circuits Karthikeyan Krishnamurthy, Ramakrishna Vetury, Stacia Keller, Umesh K. Mishra, Mark J. W. Rodwell, Stephen I. Long
1999	J	`jnl`	Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology. IEEE J. Solid State Circuits Thomas J. Jenkins, Lois T. Kehias, Primit Parikh, James Ibbetson, Umesh K. Mishra, Daniel Docter, Minh Le, Joe Pusl, Duncan Widman
1992	J	`jnl`	Ultra-high speed modulation-doped field-effect transistors: a tutorial review. Proc. IEEE Loi D. Nguyen, Lawrence E. Larson, Umesh K. Mishra