Uddalak Bhattacharya

27 papers Journal 17Unranked 10
YearRankTypeTitle / Venue / Authors
2022 — conf
A High Output Power 1V Charge Pump and Power Switch for Configurable, In-Field-Programmable Metal eFuse on Intel 4 Logic Technology.
VLSI Technology and Circuits
Stafford Hutchins, Jiabo Li, Atresh Sanne, Zhanping Chen, Mohammad M. Hasan, Uddalak Bhattacharya, Eric Karl, Jaydeep P. Kulkarni
2020 J jnl
Compiler compatible 5.66 Mb/mm
Integr.
Arindrajit Ghosh, Uddalak Bhattacharya, Manish Kumar, Swapna Banerjee
2018 J jnl
Contention free delayed keeper for high density large signal sensing memory compiler.
Integr.
Arindrajit Ghosh, Uddalak Bhattacharya, Swapna Banerjee
2017 J jnl
A 0.9-μm
IEEE J. Solid State Circuits
Zhanping Chen, Sarvesh H. Kulkarni, Vincent E. Dorgan, Salil Manohar Rajarshi, Lei Jiang, Uddalak Bhattacharya
2016 J jnl
A 0.6 V, 1.5 GHz 84 Mb SRAM in 14 nm FinFET CMOS Technology With Capacitive Charge-Sharing Write Assist Circuitry.
IEEE J. Solid State Circuits
Eric Karl, Zheng Guo, James W. Conary, Jeffrey L. Miller, Yong-Gee Ng, Satyanand Nalam, Daeyeon Kim, John Keane, Xiaofei Wang, Uddalak Bhattacharya, Kevin Zhang
2016 — conf
A 0.9um
VLSI Circuits
Zhanping Chen, Sarvesh H. Kulkarni, Vincent E. Dorgan, Uddalak Bhattacharya, Kevin Zhang
2016 J jnl
A High-Density Metal-Fuse Technology Featuring a 1.6 V Programmable Low-Voltage Bit Cell With Integrated 1 V Charge Pumps in 22 nm Tri-Gate CMOS.
IEEE J. Solid State Circuits
Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang
2015 — conf
17.1 A 0.6V 1.5GHz 84Mb SRAM design in 14nm FinFET CMOS technology.
ISSCC
Eric Karl, Zheng Guo, James W. Conary, Jeffrey L. Miller, Yong-Gee Ng, Satyanand Nalam, Daeyeon Kim, John Keane, Uddalak Bhattacharya, Kevin Zhang
2015 — conf
A 0.094um
VLSIC
Kyung-Hoae Koo, Liqiong Wei, John Keane, Uddalak Bhattacharya, Eric A. Karl, Kevin Zhang
2015 — conf
Low-voltage metal-fuse technology featuring a 1.6V-programmable 1T1R bit cell with an integrated 1V charge pump in 22nm tri-gate process.
VLSIC
Sarvesh H. Kulkarni, Zhanping Chen, Balaji Srinivasan, Brian Pedersen, Uddalak Bhattacharya, Kevin Zhang
2013 J jnl
A 4.6 GHz 162 Mb SRAM Design in 22 nm Tri-Gate CMOS Technology With Integrated Read and Write Assist Circuitry.
IEEE J. Solid State Circuits
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Mesut Meterelliyoz, John Keane, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
2012 — conf
A 4.6GHz 162Mb SRAM design in 22nm tri-gate CMOS technology with integrated active VMIN-enhancing assist circuitry.
ISSCC
Eric Karl, Yih Wang, Yong-Gee Ng, Zheng Guo, Fatih Hamzaoglu, Uddalak Bhattacharya, Kevin Zhang, Kaizad Mistry, Mark Bohr
2011 J jnl
A 32 nm High-k Metal Gate SRAM With Adaptive Dynamic Stability Enhancement for Low-Voltage Operation.
IEEE J. Solid State Circuits
Pramod Kolar, Eric Karl, Uddalak Bhattacharya, Fatih Hamzaoglu, Henry Nho, Yong-Gee Ng, Yih Wang, Kevin Zhang
2011 J jnl
Bit Cell Optimizations and Circuit Techniques for Nanoscale SRAM Design.
IEEE Des. Test Comput.
Fatih Hamzaoglu, Yih Wang, Pramod Kolar, Liqiong Wei, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
2010 — conf
A 32nm High-k metal gate SRAM with adaptive dynamic stability enhancement for low-voltage operation.
ISSCC
Hyunwoo Nho, Pramod Kolar, Fatih Hamzaoglu, Yih Wang, Eric Karl, Yong-Gee Ng, Uddalak Bhattacharya, Kevin Zhang
2010 J jnl
A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management.
IEEE J. Solid State Circuits
Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2009 J jnl
A 3.8 GHz 153 Mb SRAM Design With Dynamic Stability Enhancement and Leakage Reduction in 45 nm High-k Metal Gate CMOS Technology.
IEEE J. Solid State Circuits
Fatih Hamzaoglu, Kevin Zhang, Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Yong-Gee Ng, Andrei Pavlov, Ken Smits, Mark Bohr
2009 — conf
A 4.0 GHz 291Mb voltage-scalable SRAM design in 32nm high-κ metal-gate CMOS with integrated power management.
ISSCC
Yih Wang, Uddalak Bhattacharya, Fatih Hamzaoglu, Pramod Kolar, Yong-Gee Ng, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2008 J jnl
A 1.1 GHz 12 µA/Mb-Leakage SRAM Design in 65 nm Ultra-Low-Power CMOS Technology With Integrated Leakage Reduction for Mobile Applications.
IEEE J. Solid State Circuits
Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Tom Coan, Fatih Hamzaoglu, Walid M. Hafez, Chia-Hong Jan, Pramod Kolar, Sarvesh H. Kulkarni, Jie-Feng Lin, Yong-Gee Ng, Ian Post, Liqiong Wei, Ying Zhang, Kevin Zhang, Mark Bohr
2008 — conf
A 153Mb-SRAM Design with Dynamic Stability Enhancement and Leakage Reduction in 45nm High-Κ Metal-Gate CMOS Technology.
ISSCC
Fatih Hamzaoglu, Kevin Zhang, Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Zhanping Chen, Yong-Gee Ng, Andrei Pavlov, Ken Smits, Mark Bohr
2007 — conf
A 1.1GHz 12μA/Mb-Leakage SRAM Design in 65nm Ultra-Low-Power CMOS with Integrated Leakage Reduction for Mobile Applications.
ISSCC
Yih Wang, Hong Jo Ahn, Uddalak Bhattacharya, Tom Coan, Fatih Hamzaoglu, Walid M. Hafez, Chia-Hong Jan, Pramod Kolar, Sarvesh H. Kulkarni, Jie-Feng Lin, Yong-Gee Ng, Ian Post, Liqiong Wei, Yih Zhang, Kevin Zhang, Mark Bohr
2006 J jnl
A 3-GHz 70-mb SRAM in 65-nm CMOS technology with integrated column-based dynamic power supply.
IEEE J. Solid State Circuits
Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang, Bo Zheng, Mark Bohr
2005 J jnl
SRAM design on 65-nm CMOS technology with dynamic sleep transistor for leakage reduction.
IEEE J. Solid State Circuits
Kevin Zhang, Uddalak Bhattacharya, Zhanping Chen, Fatih Hamzaoglu, Daniel Murray, Narendra Vallepalli, Yih Wang, Bo Zheng, Mark Bohr
1999 J jnl
An 18-Mb, 12.3-GB/s CMOS pipeline-burst cache SRAM with 1.54 Gb/s/pin.
IEEE J. Solid State Circuits
Cangsang Zhao, Uddalak Bhattacharya, Martin Denham, Jim Kolousek, Yi Lu, Yong-Gee Ng, Novat Nintunze, Kamal Sarkez, Hemmige D. Varadarajan
1996 J jnl
Multiplexer/demultiplexer IC technology for 100 Gb/s fiber-optic transmission.
IEEE J. Solid State Circuits
Rajasekhar Pullela, Uddalak Bhattacharya, Scott T. Allen, Mark J. W. Rodwell
1995 J jnl
Design and performance of multistage GaAs dynamic logic.
IEEE J. Solid State Circuits
Fleming Hoeg, Stephen I. Long, Uddalak Bhattacharya
1994 J jnl
Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics.
Proc. IEEE
Mark J. W. Rodwell, Scott T. Allen, Ruai Y. Yu, Michael G. Case, Uddalak Bhattacharya, Madhukar Reddy, Eric Carman, Masayuki Kamegawa, Yoshiyuki Konishi, Joe Pusl, Rajasekhar Pullela