| Year | Rank | Type | Title / Venue / Authors |
|---|---|---|---|
| 2023 | J | jnl |
IEICE Trans. Electron.
|
| 2021 | J | jnl |
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
|
| 2021 | — | conf |
VTC Fall
|
| 2021 | — | conf |
VTC Fall
|
| 2021 | — | conf |
VTC Fall
|
| 2020 | J | jnl |
IEICE Trans. Electron.
|
| 2020 | C | conf |
ISCAS
|
| 2020 | J | jnl |
A 28-GHz-Band Highly Linear Stacked-FET Power Amplifier IC with High Back-Off PAE in 56-nm SOI CMOS.
IEICE Trans. Electron.
|
| 2019 | — | conf |
RWS
|
| 2019 | J | jnl |
IEICE Trans. Electron.
|
| 2019 | J | jnl |
IEICE Trans. Electron.
|
| 2015 | J | jnl |
IEICE Trans. Electron.
|
| 2014 | — | conf |
A-SSCC
|
| 2005 | — | conf |
ISCAS (4)
|