Tsuyoshi Funaki

42 papers Journal 34Unranked 8

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	Evaluation of Phase Measurement Error in Digital Oscilloscopes. I2MTC Shuhei Fukunaga, Tsuyoshi Funaki
2022	J	`jnl`	Noise Suppression in SiC-MOSFET Body Diode Turn-Off Operation with Simple and Robust Gate Driver. IEICE Trans. Electron. Hiroshi Suzuki, Tsuyoshi Funaki
2022	J	`jnl`	Transient thermal characterization of IEICE Electron. Express Shota Seki, Tsuyoshi Funaki, Jun Arima, Minoru Fujita, Jun Hirabayashi, Kazuyoshi Hanabusa
2020	—	`conf`	A Modular Approach to Large-Signal Modeling of an Interconnected AC/MTDC System. ISGT-Europe Yoshihiko Susuki, Naoki Kawamoto, Yusuke Ohashi, Atsushi Ishigame, Tsuyoshi Funaki, Salvatore D'Arco
2020	—	`conf`	EMI characterization for power conversion circuit with SiC power devices. ATS Takaaki Ibuchi, Tsuyoshi Funaki
2019	J	`jnl`	An experimental study on dynamic junction temperature estimation of SiC MOSFET with built-in SBD. IEICE Electron. Express Shuhei Fukunaga, Tsuyoshi Funaki, Shinsuke Harada, Yusuke Kobayashi
2019	—	`conf`	Analysis on Temperature Dependency of Effective AC Conductor Resistance of Underground Cables for Dynamic Line Ratings in Smart Grids. HPCC/SmartCity/DSS Hideharu Sugihara, Tsuyoshi Funaki
2019	J	`jnl`	Frequency-Domain EMI Simulation of Power Electronic Converter with Voltage-Source and Current-Source Noise Models. IEICE Trans. Commun. Keita Takahashi, Takaaki Ibuchi, Tsuyoshi Funaki
2018	J	`jnl`	An experimental study on estimating dynamic junction temperature of SiC MOSFET. IEICE Electron. Express Shuhei Fukunaga, Tsuyoshi Funaki
2018	J	`jnl`	Visualization of noise current propagation in a power module with scanning time-synchronized near magnetic field measurement. IEICE Electron. Express Takaaki Ibuchi, Eisuke Masuda, Tsuyoshi Funaki
2017	—	`conf`	Methodology for the determination of real-time dynamic line ratings for secure operation of overhead conductors. ISGT Europe Bonface Ngoko, Hideharu Sugihara, Tsuyoshi Funaki
2017	J	`jnl`	Open-circuit-voltage characterization system design for studies of phase-transition mechanism and deterioration in Mn-type Li-ion batteries. IEICE Electron. Express Natthawuth Somakettarin, Hideharu Sugihara, Tsuyoshi Funaki
2017	J	`jnl`	Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor. IEICE Electron. Express Shuhei Fukunaga, Tsuyoshi Funaki
2016	J	`jnl`	Transient thermal analysis of packaged SiC SBDs for high temperature operation. IEICE Electron. Express Taehwa Kim, Tsuyoshi Funaki
2015	J	`jnl`	Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electron. Express Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda
2014	J	`jnl`	A study on the self turn-on phenomenon of power MOSFET induced by the turn-off operation of body diodes. IEICE Electron. Express Tsuyoshi Funaki
2014	J	`jnl`	Loss and conducted noise characteristics for CCM PFC circuit with SiC-Schottky barrier diode. IEICE Electron. Express Takaaki Ibuchi, Tsuyoshi Funaki
2013	—	`conf`	A method for evaluating installable capacity of distributed generators with power factor control in MV and LV distribution networks. ISGT Europe Hideharu Sugihara, Tsuyoshi Funaki
2013	—	`conf`	A study on gate voltage fluctuation of MOSFET induced by switching operation of adjacent MOSFET in high voltage power conversion circuit. EMC Compo Tsuyoshi Funaki
2013	J	`jnl`	Comparative study of self turn-on phenomenon in high-voltage Si and SiC power MOSFETs. IEICE Electron. Express Tsuyoshi Funaki
2013	J	`jnl`	Loss reduction of lateral power diode on SOI substrate with trenched buried oxide layer. IEICE Electron. Express Satoshi Shiraki, Shigeki Takahashi, Youichi Ashida, Atsuyuki Hiruma, Tsuyoshi Funaki
2012	J	`jnl`	High temperature switching operation of a power diamond Schottky barrier diode. IEICE Electron. Express Tsuyoshi Funaki, Makiko Hirano, Hitoshi Umezawa, Shinichi Shikata
2012	J	`jnl`	Thermal instability effects in SiC Power MOSFETs. Microelectron. Reliab. Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2011	J	`jnl`	A study of SiC Power BJT performance and robustness. Microelectron. Reliab. Alberto Castellazzi, T. Takuno, Ryutaro Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2011	J	`jnl`	A study on modeling of dynamic characteristics of circuit component in TDR measurement based on Prony analysis. IEICE Electron. Express Takaaki Ibuchi, Tsuyoshi Funaki
2011	J	`jnl`	Comparative study of the static and switching characteristics of SiC and Si MOSFETs. IEICE Electron. Express Tsuyoshi Funaki, Yuki Nakano, Takashi Nakamura
2010	J	`jnl`	Characterization of SiC power module for high switching frequency operation. IEICE Electron. Express Tsuyoshi Funaki, Hiroyasu Inoue, Masashi Sasagawa, Takashi Nakamura
2010	J	`jnl`	Characterization of the gate-voltage dependency of input capacitance in a SiC MOSFET. IEICE Electron. Express Nathabhat Phankong, Tsuyoshi Funaki, Takashi Hikihara
2010	J	`jnl`	Experimental validation of an equivalent mechanical model for understanding power system stability. IEICE Electron. Express Yuko Omagari, Tsuyoshi Funaki
2010	J	`jnl`	Switching characteristics of a diamond Schottky barrier diode. IEICE Electron. Express Kazuya Kodama, Tsuyoshi Funaki, Hitoshi Umezawa, Shinichi Shikata
2010	J	`jnl`	Switching characteristics of lateral-type and vertical-type SiC JFETs depending on their internal parasitic capacitances. IEICE Electron. Express Nathabhat Phankong, Tsuyoshi Funaki, Takashi Hikihara
2009	J	`jnl`	The influence of parasitic components on power MOSFET switching operation in power conversion circuits. IEICE Electron. Express Tsuyoshi Funaki, Hisato Arioka, Takashi Hikihara
2008	J	`jnl`	A study on electro thermal response of SiC power module during high temperature operation. IEICE Electron. Express Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
2008	J	`jnl`	High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena. IEICE Electron. Express Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2008	J	`jnl`	The Origin of Nonlinear Phenomena in TCR-SVC Associated With Parametric Excitation of Intrinsic Oscillation and External Excitation. IEEE Trans. Circuits Syst. I Regul. Pap. Tsuyoshi Funaki, Kuoto Nakagawa, Takashi Hikihara
2007	J	`jnl`	Enhanced Entrainment of Synchronous Inverters for Distributed Power Sources. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. Takashi Hikihara, Tadashi Sawada, Tsuyoshi Funaki
2007	J	`jnl`	Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET. IEICE Electron. Express Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2006	J	`jnl`	Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage. IEICE Electron. Express Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara
2005	—	`conf`	Evaluating performance of hybrid-type power system simulator based on transient stability analysis: a dynamical system approach. ISCAS (4) Yoshihiko Susuki, Yasuhiro Takama, Tsuyoshi Funaki, Takashi Hikihara
2005	J	`jnl`	Simple circuit model of SiC pin diode composed by using experimental electrical characteristics. IEICE Electron. Express Katsunori Asano, Tsuyoshi Funaki, Yoshitaka Sugawara, Takashi Hikihara
2005	J	`jnl`	Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters. IEICE Electron. Express Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara
2004	J	`jnl`	SiC JFET dc characteristics under extremely high ambient temperatures. IEICE Electron. Express Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara