Tsung-Yung Jonathan Chang

57 papers Journal 18Unranked 39
YearRankTypeTitle / Venue / Authors
2026 — conf
15.4 A 16nm 168Mb Embedded STT-MRAM with 0.0249µm
ISSCC
Po-Hao Lee, Chia-Fu Lee, Hon-Jarn Lin, Cheng-Han Lu, Yen-An Chang, Pranata W. Sanjaya, Chia-Jung Tsen, Kuan-Chun Chen, Ming-Chieh Lin, Chao-Jung Hung, Tan-Li Chou, Chih-Hui Weng, Chia-Yu Wang, J. J. Wu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2026 J jnl
A 3 nm FinFET 125 TOPS/W-29 TFLOPS/W, 90 TOPS/mm
IEEE J. Solid State Circuits
Haruki Mori, Je-Min Hung, Wei-Chang Zhao, Kinshuk Khare, Brian Crafton, Hiroaki Ishii, Cheng-En Lee, Xiaochen Peng, Xiaoyu Sun, Yorinobu Fujino, Chia-Jung Tsen, Vineet Joshi, Chao-Kai Chuang, Takeshi Hashizume, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Hidehiro Fujiwara, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2026 J jnl
A 3-nm FinFET 563-kbit 35.5-Mbit/mm
IEEE J. Solid State Circuits
Yumito Aoyagi, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Kazuto Mizutani, Masaya Hamada, Yuichiro Ishii, Yen Chi Chou, Jun Cheng Liu, Chien-yu Huang, Kang-Hui Peng, Yu-Hao Hsu, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2026 J jnl
A μ-NMC-Δ-IMC Heterogeneous STT-MRAM Compute-in-Memory Macro Using Δ-Clamping Bit Reduction for Noise-Tolerant Bayesian Neural Networks.
IEEE J. Solid State Circuits
De-Qi You, Win-San Khwa, Bo Zhang, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Yi-Ming Li, Yu-Hui Wang, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2025 — conf
14.1 A 22nm 104.5TOPS/W µ-NMC-Δ-IMC Heterogeneous STT-MRAM CIM Macro for Noise-Tolerant Bayesian Neural Networks.
ISSCC
De-Qi You, Win-San Khwa, Bo Zhang, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Yi-Ming Li, Yu-Hui Wang, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2025 — conf
29.5 A 3nm 3.6GHz Dual-Port SRAM with Backend-RC Optimization and a Far-End Write-Assist Scheme.
ISSCC
Hidehiro Fujiwara, Wei-Chang Zhao, Kinshuk Khare, Yi-Hsin Nien, Chih-Yu Lin, Cheng-Han Lin, Shan-Ru Liao, Kenta Torigoe, Shirleen Xia, Yuichiro Ishii, Yao-Yi Lin, Jhon-Jhy Liaw, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2025 J jnl
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM With Leakage Saving Circuits in 3-nm FinFET for HPC Applications.
IEEE J. Solid State Circuits
Yoshiaki Osada, Takaaki Nakazato, Yumito Aoyagi, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2025 J jnl
A 22 nm Floating-Point ReRAM Compute-in-Memory Macro Using Residue-Shared ADC for AI Edge Device.
IEEE J. Solid State Circuits
Hung-Hsi Hsu, Tai-Hao Wen, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Ashwin Sanjay Lele, Bo Zhang, Ping-Sheng Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2025 J jnl
A 3 nm-FinFET 4.3 GHz 21.1 Mb/mm
IEEE J. Solid State Circuits
Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
2025 — conf
A 38.1Mb/mm
ISSCC
Tsung-Yung Jonathan Chang, Yen-Huei Chen, K. Venkateswara Reddy, Nikhil Puri, Teja Masina, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Ku-Feng Lin, Ming-Hung Chang, Ching-Wei Wu, Robin Lee, Yih Wang, Hung-Jen Liao, Quincy Li, Ping-Wei Wang, Geoffrey Yeap
2025 J jnl
Enhancing DCIM Efficiency with Multi-Storage-Row Architecture for Edge AI Workloads.
IEEE Comput. Archit. Lett.
Xiaoyu Sun, Haruki Mori, Wei-Chang Zhao, Je-Min Hung, Hidehiro Fujiwara, Brian Crafton, Bo Zhang, Win-San Khwa, Yu-Der Chih, Tsung-Yung Jonathan Chang, Kerem Akarvardar
2024 — conf
15.3 A 3nm FinFET 4.3GHz 21.1Mb/mm2 Double-Pumping 1-Read and 1-Write Pseudo-2-Port SRAM with Folded-Bitline Multi-Bank Architecture.
ISSCC
Masaru Haraguchi, Yorinobu Fujino, Yoshisato Yokoyama, Ming-Hung Chang, Yu-Hao Hsu, Hong-Chen Cheng, Koji Nii, Yih Wang, Tsung-Yung Jonathan Chang
2024 — conf
15.7 A 32Mb RRAM in a 12nm FinFet Technology with a 0.0249μm
ISSCC
Yi-Cheng Huang, Shang-Hsuan Liu, Hsu-Shun Chen, Hsin-Chang Feng, Chih-Feng Li, Chou-Ying Yang, Wei-Keng Chang, Chang-Feng Yang, Chun-Yu Wu, Yen-Cheng Lin, Tsung-Tse Yang, Chih-Yang Chang, Wen-Ting Chu, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2024 — conf
15.9 A 16nm 16Mb Embedded STT-MRAM with a 20ns Write Time, a 10
ISSCC
Ku-Feng Lin, Hiroki Noguchi, Yi-Chun Shih, Perng-Fei Yuh, Yuan-Jen Lee, Tung-Cheng Chang, Sheng-Po Huang, Yu-Fan Lin, Chun-Ying Lee, Yen-Hsiang Huang, Jui-Che Tsai, Saman Adham, Peter Noel, Ramin Yazdi, Marat Gershoig, YangJae Shin, Vineet Joshi, Ted Wong, Meng-Ru Jiang, J. J. Wu, Chun-Tai Cheng, Yu-Jen Wang, Harry Chuang, Yu-Der Chih, Yih Wang, Tsung-Yung Jonathan Chang
2024 — conf
34.4 A 3nm, 32.5TOPS/W, 55.0TOPS/mm
ISSCC
Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Kinshuk Khare, Cheng-En Lee, Xiaochen Peng, Vineet Joshi, Chao-Kai Chuang, Shu-Huan Hsu, Takeshi Hashizume, Toshiaki Naganuma, Chen-Hung Tien, Yao-Yi Liu, Yen-Chien Lai, Chia-Fu Lee, Tan-Li Chou, Kerem Akarvardar, Saman Adham, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2024 — conf
34.8 A 22nm 16Mb Floating-Point ReRAM Compute-in-Memory Macro with 31.2TFLOPS/W for AI Edge Devices.
ISSCC
Tai-Hao Wen, Hung-Hsi Hsu, Win-San Khwa, Wei-Hsing Huang, Zhao-En Ke, Yu-Hsiang Chin, Hua-Jin Wen, Yu-Chen Chang, Wei-Ting Hsu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Shih-Hsih Teng, Chung-Cheng Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2024 — conf
A 22nm Nonvolatile AI-Edge Processor with 21.4TFLOPS/W using 47.25Mb Lossless-Compressed-Computing STT-MRAM Near-Memory-Compute Macro.
VLSI Technology and Circuits
De-Qi You, Win-San Khwa, Jui-Jen Wu, Chuan-Jia Jhang, Guan-Yi Lin, Po-Jung Chen, Ting-Chien Chiu, Fang-Yi Chen, Andrew Lee, Yu-Cheng Hung, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2024 J jnl
A 3-nm FinFET 27.6-Mbit/mm
IEEE J. Solid State Circuits
Yumito Aoyagi, Koji Nii, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2024 — conf
A 3.3GHz 1024X640 Multi-Bank Single-Port SRAM with Frequency Enhancing Techniques and 0.55V-1.35V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
VLSI Technology and Circuits
Ming-Chieh Huang, Wei Wing Mar, Shankar Kanade, Boris Bai, Aditya Gayatri, Krishna Khairnar, Amy Lai, Yu-Hao Hsu, Hung-Jen Liao, Yih Wang, Tsung-Yung Jonathan Chang
2024 — conf
A 3nm Fin-FET 19.87-Mbit/mm
VLSI Technology and Circuits
Tomotaka Tanaka, Yuichiro Ishii, Makoto Yabuuchi, Yumito Aoyagi, Masaya Hamada, Kazuto Mizutani, Koji Nii, Hidehiro Fujiwara, Isabel Wang, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2024 J jnl
A Nonvolatile AI-Edge Processor With SLC-MLC Hybrid ReRAM Compute-in-Memory Macro Using Current-Voltage-Hybrid Readout Scheme.
IEEE J. Solid State Circuits
Hung-Hsi Hsu, Tai-Hao Wen, Wei-Hsing Huang, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Yu-Hsiang Chin, Yu-Chiao Chen, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2024 J jnl
An 8b-Precision 8-Mb STT-MRAM Near-Memory-Compute Macro Using Weight-Feature and Input-Sparsity Aware Schemes for Energy-Efficient Edge AI Devices.
IEEE J. Solid State Circuits
De-Qi You, Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2024 J jnl
Efficient Processing of MLPerf Mobile Workloads Using Digital Compute-In-Memory Macros.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Xiaoyu Sun, Weidong Cao, Brian Crafton, Kerem Akarvardar, Haruki Mori, Hidehiro Fujiwara, Hiroki Noguchi, Yu-Der Chih, Meng-Fan Chang, Yih Wang, Tsung-Yung Jonathan Chang
2023 — conf
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
VLSI Technology and Circuits
Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2023 J jnl
8-b Precision 8-Mb ReRAM Compute-in-Memory Macro Using Direct-Current-Free Time-Domain Readout Scheme for AI Edge Devices.
IEEE J. Solid State Circuits
Je-Min Hung, Tai-Hao Wen, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2023 — conf
A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity.
ISSCC
Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih, Hon-Jarn Lin, Yen-An Chang, Cheng-Han Lu, Yu-Lin Chen, Chieh-Pu Lo, Chung-Chieh Chen, Cheng-Hsiung Kuo, Tan-Li Chou, Chia-Yu Wang, J. J. Wu, Roger Wang, Harry Chuang, Yih Wang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2023 — conf
A 22nm 8Mb STT-MRAM Near-Memory-Computing Macro with 8b-Precision and 46.4-160.1TOPS/W for Edge-AI Devices.
ISSCC
Yen-Cheng Chiu, Win-San Khwa, Chung-Yuan Li, Fang-Ling Hsieh, Yu-An Chien, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, De-Qi You, Fang-Yi Chen, Andrew Lee, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2023 — conf
A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices.
VLSI Technology and Circuits
Tai-Hao Wen, Je-Min Hung, Hung-Hsi Hsu, Yuan Wu, Fu-Chun Chang, Chung-Yuan Li, Chih-Han Chien, Chin-I Su, Win-San Khwa, Jui-Jen Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Mon-Shu Ho, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2023 — conf
A 3-nm 27.6-Mbit/mm2 Self-timed SRAM Enabling 0.48 - 1.2 V Wide Operating Range with Far-end Pre-charge and Weak-Bit Tracking.
VLSI Technology and Circuits
Yumito Aoyagi, Makoto Yabuuchi, Tomotaka Tanaka, Yuichiro Ishii, Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Isabel Wang, Yu-Hao Hsu, Hong-Chen Cheng, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2023 — conf
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology.
VLSI Technology and Circuits
Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang
2023 — conf
A 4nm 6163-TOPS/W/b $\mathbf{4790-TOPS/mm^{2}/b}$ SRAM Based Digital-Computing-in-Memory Macro Supporting Bit-Width Flexibility and Simultaneous MAC and Weight Update.
ISSCC
Haruki Mori, Wei-Chang Zhao, Cheng-En Lee, Chia-Fu Lee, Yu-Hao Hsu, Chao-Kai Chuang, Takeshi Hashizume, Hao-Chun Tung, Yao-Yi Liu, Shin-Rung Wu, Kerem Akarvardar, Tan-Li Chou, Hidehiro Fujiwara, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2023 — conf
A Nonvolatile Al-Edge Processor with 4MB SLC-MLC Hybrid-Mode ReRAM Compute-in-Memory Macro and 51.4-251TOPS/W.
ISSCC
Wei-Hsing Huang, Tai-Hao Wen, Je-Min Hung, Win-San Khwa, Yun-Chen Lo, Chuan-Jia Jhang, Hung-Hsi Hsu, Yu-Hsiang Chin, Yu-Chiao Chen, Chung-Chuan Lo, Ren-Shuo Liu, Kea-Tiong Tang, Chih-Cheng Hsieh, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2023 — conf
Write-enhanced Single-ended 11T SRAM Enabling Single Bitcell Reconfigurable Compute-in-Memory Employing Complementary FETs.
VLSI Technology and Circuits
Wei-Xiang You, Cheng-Yin Wang, Yih Wang, Tsung-Yung Jonathan Chang, Szuya Sandy Liao
2022 — conf
A 12nm 121-TOPS/W 41.6-TOPS/mm2 All Digital Full Precision SRAM-based Compute-in-Memory with Configurable Bit-width For AI Edge Applications.
VLSI Technology and Circuits
Chia-Fu Lee, Cheng-Han Lu, Cheng-En Lee, Haruki Mori, Hidehiro Fujiwara, Yi-Chun Shih, Tan-Li Chou, Yu-Der Chih, Tsung-Yung Jonathan Chang
2022 J jnl
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device.
IEEE J. Solid State Circuits
Yen-Cheng Chiu, Tung-Cheng Chang, Chun-Ying Lee, Je-Min Hung, Kuang-Tang Chang, Cheng-Xin Xue, Ssu-Yen Wu, Hui-Yao Kao, Peng Chen, Hsiao-Yu Huang, Shih-Hsih Teng, Chieh-Pu Lo, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, Yier Jin, Meng-Fan Chang
2022 — conf
A 22nm 4Mb STT-MRAM Data-Encrypted Near-Memory Computation Macro with a 192GB/s Read-and-Decryption Bandwidth and 25.1-55.1TOPS/W 8b MAC for AI Operations.
ISSCC
Yen-Cheng Chiu, Chia-Sheng Yang, Shih-Hsih Teng, Hsiao-Yu Huang, Fu-Chun Chang, Yuan Wu, Yu-An Chien, Fang-Ling Hsieh, Chung-Yuan Li, Guan-Yi Lin, Po-Jung Chen, Tsen-Hsiang Pan, Chung-Chuan Lo, Win-San Khwa, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chieh-Pu Lo, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2022 — conf
A 5-nm 254-TOPS/W 221-TOPS/mm
ISSCC
Hidehiro Fujiwara, Haruki Mori, Wei-Chang Zhao, Mei-Chen Chuang, Rawan Naous, Chao-Kai Chuang, Takeshi Hashizume, Dar Sun, Chia-Fu Lee, Kerem Akarvardar, Saman Adham, Tan-Li Chou, Mahmut Ersin Sinangil, Yih Wang, Yu-Der Chih, Yen-Huei Chen, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2022 — conf
An 8-Mb DC-Current-Free Binary-to-8b Precision ReRAM Nonvolatile Computing-in-Memory Macro using Time-Space-Readout with 1286.4-21.6TOPS/W for Edge-AI Devices.
ISSCC
Je-Min Hung, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Tai-Hao Wen, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2021 — conf
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices.
ISSCC
Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang
2021 J jnl
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V
IEEE J. Solid State Circuits
Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li
2021 — conf
An 89TOPS/W and 16.3TOPS/mm
ISSCC
Yu-Der Chih, Po-Hao Lee, Hidehiro Fujiwara, Yi-Chun Shih, Chia-Fu Lee, Rawan Naous, Yu-Lin Chen, Chieh-Pu Lo, Cheng-Han Lu, Haruki Mori, Wei-Cheng Zhao, Dar Sun, Mahmut E. Sinangil, Yen-Huei Chen, Tan-Li Chou, Kerem Akarvardar, Hung-Jen Liao, Yih Wang, Meng-Fan Chang, Tsung-Yung Jonathan Chang
2021 J jnl
RRAM-DNN: An RRAM and Model-Compression Empowered All-Weights-On-Chip DNN Accelerator.
IEEE J. Solid State Circuits
Ziyun Li, Zhehong Wang, Li Xu, Qing Dong, Bowen Liu, Chin-I Su, Wen-Ting Chu, George Tsou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Dennis Sylvester, Hun-Seok Kim, David T. Blaauw
2020 — conf
13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference.
ISSCC
Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Chieh-Pu Lo, Meng-Chun Shih, Kuei-Hung Shen, Harry Chuang, Tsung-Yung Jonathan Chang
2020 — conf
A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range.
VLSI Circuits
Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai, Chin-I Su, Pei-Ling Tseng, Wei-Chi Chen, Wu-Chin Tsai, Wen-Ting Chu, Tong-Chern Ong, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2020 — conf
An All-Weights-on-Chip DNN Accelerator in 22nm ULL Featuring 24×1 Mb eRRAM.
VLSI Circuits
Zhehong Wang, Ziyun Li, Li Xu, Qing Dong, Chin-I Su, Wen-Ting Chu, George Tsou, Yu-Der Chih, Tsung-Yung Jonathan Chang, Dennis Sylvester, Hun-Seok Kim, David T. Blaauw
2019 J jnl
A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination.
IEEE J. Solid State Circuits
Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang, Mahmut E. Sinangil, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester
2019 J jnl
Logic Process Compatible 40-nm 16-Mb, Embedded Perpendicular-MRAM With Hybrid-Resistance Reference, Sub- $\mu$ A Sensing Resolution, and 17.5-nS Read Access Time.
IEEE J. Solid State Circuits
Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2018 — conf
A 1Mb 28nm STT-MRAM with 2.8ns read access time at 1.2V VDD using single-cap offset-cancelled sense amplifier and in-situ self-write-termination.
ISSCC
Qing Dong, Zhehong Wang, Jongyup Lim, Yiqun Zhang, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester
2018 — conf
A 28NM Integrated True Random Number Generator Harvesting Entropy from MRAM.
VLSI Circuits
Kaiyuan Yang, Qing Dong, Zhehong Wang, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, David T. Blaauw, Dennis Sylvester
2018 — conf
An N40 256K×44 embedded RRAM macro with SL-precharge SA and low-voltage current limiter to improve read and write performance.
ISSCC
Chung-Cheng Chou, Zheng-Jun Lin, Pei-Ling Tseng, Chih-Feng Li, Chih-Yang Chang, Wei-Chi Chen, Yu-Der Chih, Tsung-Yung Jonathan Chang
2018 — conf
Logic Process Compatible 40NM 16MB, Embedded Perpendicular-MRAM with Hybrid-Resistance Reference, Sub-μA Sensing Resolution, and 17.5NS Read Access Time.
VLSI Circuits
Yi-Chun Shih, Chia-Fu Lee, Yen-An Chang, Po-Hao Lee, Hon-Jarn Lin, Yu-Lin Chen, Ku-Feng Lin, Ta-Ching Yeh, Hung-Chang Yu, Harry Chuang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2018 — conf
Logic Process Compatible 40nm 256K×144 Embedded RRAM with Low Voltage Current Limiter and Ambient Compensation Scheme to Improve the Read Window.
A-SSCC
Chien-An Lai, Chung-Cheng Chou, Chi-Hsiang Weng, Zheng-Jun Lin, Pei-Ling Tseng, Chien-Fan Wang, Chih-Chen Wang, Chin-I Su, Wei-Chi Chen, Yu-Cheng Lin, Tong-Chern Ong, Chi Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2017 — conf
11.3 A 10nm 32Kb low-voltage logic-compatible anti-fuse one-time-programmable memory with anti-tampering sensing scheme.
ISSCC
Shau-Yu Chou, Yu-Shiang Chen, Jun-Hao Chang, Yu-Der Chih, Tsung-Yung Jonathan Chang
2017 — conf
A 1.4Mb 40-nm embedded ReRAM macro with 0.07um
A-SSCC
Chia-Fu Lee, Hon-Jarn Lin, Chiu-Wang Lien, Yu-Der Chih, Tsung-Yung Jonathan Chang
2015 J jnl
Low VDDmin Swing-Sample-and-Couple Sense Amplifier and Energy-Efficient Self-Boost-Write-Termination Scheme for Embedded ReRAM Macros Against Resistance and Switch-Time Variations.
IEEE J. Solid State Circuits
Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chrong Jung Lin, Ku-Feng Lin, Yu-Der Chih, Tsung-Yung Jonathan Chang
2014 — conf
19.4 embedded 1Mb ReRAM in 28nm CMOS with 0.27-to-1V read using swing-sample-and-couple sense amplifier and self-boost-write-termination scheme.
ISSCC
Meng-Fan Chang, Jui-Jen Wu, Tun-Fei Chien, Yen-Chen Liu, Ting-Chin Yang, Wen-Chao Shen, Ya-Chin King, Chorng-Jung Lin, Ku-Feng Lin, Yu-Der Chih, Sreedhar Natarajan, Tsung-Yung Jonathan Chang
2013 — conf
Cycling endurance optimization scheme for 1Mb STT-MRAM in 40nm technology.
ISSCC
Hung-Chang Yu, Kai-Chun Lin, Ku-Feng Lin, Chin-Yi Huang, Yu-Der Chih, Tong-Chern Ong, Tsung-Yung Jonathan Chang, Sreedhar Natarajan, Luan C. Tran