Tsunenobu Kimoto

13 papers Journal 9Unranked 4
YearRankTypeTitle / Venue / Authors
2024 — conf
An Overview of SiC High-Voltage Power Devices and High-Temperature ICs.
BCICTS
Tsunenobu Kimoto, M. Kaneko, Keita Tachiki, K. Ito, K. Mikami, H. Fujii, A. Inoue, N. Maeda
2022 — conf
Performance Improvement and Reliability Physics in SiC MOSFETs.
IRPS
Tsunenobu Kimoto, Keita Tachiki, A. Iijima, Mitsuaki Kaneko
2020 J jnl
Rapid Revolution Speed Control of the Brushless DC Motor for Automotive LIDAR Applications.
IEICE Trans. Electron.
Hironobu Akita, Tsunenobu Kimoto
2014 — conf
Progress and future challenges of silicon carbide devices for integrated circuits.
CICC
Tsunenobu Kimoto
2013 — conf
Ultrahigh-voltage SiC devices for future power infrastructure.
ESSDERC
Tsunenobu Kimoto
2012 J jnl
Thermal instability effects in SiC Power MOSFETs.
Microelectron. Reliab.
Alberto Castellazzi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2011 J jnl
A study of SiC Power BJT performance and robustness.
Microelectron. Reliab.
Alberto Castellazzi, T. Takuno, Ryutaro Onishi, Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2008 J jnl
A study on electro thermal response of SiC power module during high temperature operation.
IEICE Electron. Express
Tsuyoshi Funaki, Akira Nishio, Tsunenobu Kimoto, Takashi Hikihara
2008 J jnl
High-temperature characteristics of SiC Schottky barrier diodes related to physical phenomena.
IEICE Electron. Express
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2007 J jnl
Evaluation of capacitance-voltage characteristics for high voltage SiC-JFET.
IEICE Electron. Express
Tsuyoshi Funaki, Tsunenobu Kimoto, Takashi Hikihara
2006 J jnl
Characterization of punch-through phenomenon in SiC-SBD by capacitance-voltage measurement at high reverse bias voltage.
IEICE Electron. Express
Tsuyoshi Funaki, Shuntaro Matsuzaki, Tsunenobu Kimoto, Takashi Hikihara
2005 J jnl
Switching characteristics of SiC JFET and Schottky diode in high-temperature dc-dc power converters.
IEICE Electron. Express
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Anuwat Jangwanitlert, Sharmila Mounce, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara
2004 J jnl
SiC JFET dc characteristics under extremely high ambient temperatures.
IEICE Electron. Express
Tsuyoshi Funaki, Juan Carlos Balda, Jeremy Junghans, Avinash S. Kashyap, Fred D. Barlow, H. Alan Mantooth, Tsunenobu Kimoto, Takashi Hikihara