Toshihide Suzuki

17 papers Journal 9Unranked 8
YearRankTypeTitle / Venue / Authors
2024 J jnl
A neural network-based DPD coefficient determination for PA linearization in 5G and beyond-5G mmWave systems.
IEICE Electron. Express
Aravind Tharayil Narayanan, Ludovico Minati, Aran Hagihara, Jun Kobayashi, Toshihiro Shimura, Yoichi Kawano, Parthojit Chakraborty, Jim Bartels, Korkut Kaan Tokgoz, Shiro Dosho, Toshihide Suzuki, Hiroyuki Ito
2018 — conf
A 120Gb/s 16QAM CMOS millimeter-wave wireless transceiver.
ISSCC
Korkut Kaan Tokgoz, Shotaro Maki, Jian Pang, Noriaki Nagashima, Ibrahim Abdo, Seitaro Kawai, Takuya Fujimura, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa
2017 J jnl
Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers.
IEICE Trans. Electron.
Masaru Sato, Yoshitaka Niida, Toshihide Suzuki, Yasuhiro Nakasha, Yoichi Kawano, Taisuke Iwai, Naoki Hara, Kazukiyo Joshin
2017 — conf
W-band ultra-high data-rate 65nm CMOS wireless transceiver.
ASP-DAC
Korkut Kaan Tokgoz, Shotaro Maki, Seitarou Kawai, Noriaki Nagashima, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Kenichi Okada, Akira Matsuzawa
2016 — conf
13.3 A 56Gb/s W-band CMOS wireless transceiver.
ISSCC
Korkut Kaan Tokgoz, Shotaro Maki, Seitaro Kawai, Noriaki Nagashima, Jun Emmei, Masato Dome, Hisashi Kato, Jian Pang, Yoichi Kawano, Toshihide Suzuki, Taisuke Iwai, Yuuki Seo, Kimsrun Lim, Shinji Sato, Ning Li, Kengo Nakata, Kenichi Okada, Akira Matsuzawa
2016 J jnl
300-GHz Amplifier in 75-nm InP HEMT Technology.
IEICE Trans. Electron.
Hiroshi Matsumura, Yoichi Kawano, Shoichi Shiba, Masaru Sato, Toshihide Suzuki, Yasuhiro Nakasha, Tsuyoshi Takahashi, Kozo Makiyama, Taisuke Iwai, Naoki Hara
2015 J jnl
Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis.
IEICE Trans. Electron.
Shoichi Shiba, Masaru Sato, Hiroshi Matsumura, Yoichi Kawano, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Taisuke Iwai, Naoki Hara
2013 — conf
Submillimeter-wave InP HEMT amplifiers with current-reuse topology.
RWS
Masaru Sato, Shoichi Shiba, Hiroshi Matsumura, Tsuyoshi Takahashi, Toshihide Suzuki, Yasuhiro Nakasha, Naoki Hara
2012 J jnl
A 24 dB Gain 51-68 GHz Common Source Low Noise Amplifier Using Asymmetric-Layout Transistors.
IEICE Trans. Fundam. Electron. Commun. Comput. Sci.
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Yoichi Kawano, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
2012 — conf
A fully integrated triple-band CMOS power amplifier for WCDMA mobile handsets.
ISSCC
Kouichi Kanda, Yoichi Kawano, Takao Sasaki, Noriaki Shirai, Tetsuro Tamura, Shigeaki Kawai, Masahiro Kudo, Tomotoshi Murakami, Hiroyuki Nakamoto, Nobumasa Hasegawa, Hideki Kano, Nobuhiro Shimazui, Akiko Mineyama, Kazuaki Oishi, Masashi Shima, Naoyoshi Tamura, Toshihide Suzuki, Toshihiko Mori, Kimitoshi Niratsuka, Shinji Yamaura
2010 — conf
A 24 dB gain 51-68 GHz CMOS low noise amplifier using asymmetric-layout transistors.
ESSCIRC
Ning Li, Keigo Bunsen, Naoki Takayama, Qinghong Bu, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kenichi Okada, Akira Matsuzawa
2009 — conf
A 77GHz transceiver in 90nm CMOS.
ISSCC
Yoichi Kawano, Toshihide Suzuki, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
2008 — conf
60 and 77GHz Power Amplifiers in Standard 90nm CMOS.
ISSCC
Toshihide Suzuki, Yoichi Kawano, Masaru Sato, Tatsuya Hirose, Kazukiyo Joshin
2007 J jnl
A 50-Gbit/s 450-mW Full-Rate 4: 1 Multiplexer With Multiphase Clock Architecture in 0.13-µm InP HEMT Technology.
IEEE J. Solid State Circuits
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Shinji Yamaura, Tsuyoshi Takahashi, Kozo Makiyama, Tatsuya Hirose
2004 J jnl
A 80-gbit/s D-type flip-flop circuit using InP HEMT technology.
IEEE J. Solid State Circuits
Toshihide Suzuki, Tsuyoshi Takahashi, Tatsuya Hirose, Masahiko Takikawa
2002 J jnl
A 43-Gb/s full-rate-clock 4: 1 multiplexer in InP-based HEMT technology.
IEEE J. Solid State Circuits
Yasuhiro Nakasha, Toshihide Suzuki, Hideki Kano, Kouji Tsukashima, Akio Ohya, Ken Sawada, Kozo Makiyama, Tsuyoshi Takahashi, Masahiro Nishi, Tatsuya Hirose, Masahiko Takikawa, Yuu Watanabe
2001 J jnl
A 49-GHz preamplifier with a transimpedance gain of 52 dBΩ using InP HEMTs.
IEEE J. Solid State Circuits
Hisao Shigematsu, Masaru Sato, Toshihide Suzuki, Tsuyoshi Takahashi, Kenji Imanishi, Naoki Hara, Hiroaki Ohnishi, Yuu Watanaba