Tor A. Fjeldly

11 papers Misc 1Journal 6Unranked 4
YearRankTypeTitle / Venue / Authors
2013 — conf
A compact charge-based physical model for AlGaN/GaN HEMTs.
RWS
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
2013 — conf
A compact charge-based physical model for AlGaN/GaN HEMTs.
WiSNet
F. M. Yigletu, Benjamín Iñíguez, Sourabh Khandelwal, Tor A. Fjeldly
2013 J jnl
Modeling of electrostatics and drain current in nanoscale quadruple-gate MOSFET using conformal mapping techniques.
Microelectron. J.
Udit Monga, Dag-Martin Nilsen, Tor A. Fjeldly
2010 J jnl
Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs.
Math. Comput. Model.
Udit Monga, H. Børli, Tor A. Fjeldly
2010 J jnl
Preface.
Math. Comput. Model.
Yiming Li, Pavel Dyshlovenko, Tatsuya Ezaki, Tor A. Fjeldly, Hans Kosina, Todd McKenzie, Mincheol Shin, Laurence Tianruo Yang, Shao-Ming Yu
2008 J jnl
Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs.
Math. Comput. Simul.
S. Kolberg, H. Børli, Tor A. Fjeldly
2008 J jnl
Preface.
Math. Comput. Simul.
Yiming Li, Juncheng Cao, Pavel Dyshlovenko, Tatsuya Ezaki, Tor A. Fjeldly, Hans Kosina, Todd McKenzie, Hiroshi Mizuta, Laurence Tianruo Yang
2007 J jnl
A Secure Approach to Distributed Internet-Enabled Metrology.
IEEE Trans. Instrum. Meas.
Åsmund Sand, Harald Slinde, Tor A. Fjeldly
2006 Misc conf
Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs.
International Conference on Computational Science (4)
S. Kolberg, Tor A. Fjeldly, Benjamín Iñíguez
2005 — conf
Modeling and simulation of high capacitance ratio RF MEMS shunt switch.
Circuits, Signals, and Systems
Shimul Chandra Saha, Ulrik Hanke, Geir U. Jensen, Anton M. Bøifot, Tor A. Fjeldly, Trond Sæther
2000 — conf
Transistor Modeling for the VDSM Era.
ISQED
Michael S. Shur, Tor A. Fjeldly, Trond Ytterdal