Ton J. Mouthaan

13 papers Journal 8Unranked 5
YearRankTypeTitle / Venue / Authors
2008 — conf
CreaTe: A New Programme to Attract Engineers as Design Artists.
DELTA
Zsófia Ruttkay, Ton J. Mouthaan
2006 — conf
Internationalisation of Masters education; globalisation at work.
DELTA
Ton J. Mouthaan, Anke Kohl
2005 J jnl
A 3-D Circuit Model to evaluate CDM performance of ICs.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2004 — conf
A Case Study of a Microsystems MSc Curriculum.
DELTA
Ton J. Mouthaan
2003 — conf
Competence-Based EE-Learning: (How) Can We Implement It?
MSE
Ton J. Mouthaan, Wouter Olthuis, Henk Vos
2003 J jnl
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2002 — conf
Competencies of BSc and MSc Programmes in Electrical Engineering and Student Portfolios.
DELTA
Ton J. Mouthaan, R. W. Brink, Henk Vos
2002 J jnl
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress.
Microelectron. Reliab.
M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper
2002 J jnl
Zapping thin film transistors.
Microelectron. Reliab.
N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan
2001 J jnl
Investigations on double-diffused MOS transistors under ESD zap conditions.
Microelectron. Reliab.
Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper
2001 J jnl
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
Microelectron. Reliab.
N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan
1996 J jnl
Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Benno H. Krabbenborg, A. Bosma, Henk C. de Graaff, Ton J. Mouthaan
1994 J jnl
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan