Tomás Palacios

28 papers A* 3Journal 10Unranked 15

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	A 0.7 cm IEEE J. Solid State Circuits Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan
2025	J	`jnl`	A Highly Power- and Area-Efficient PMU for Cell-Size Autonomous Microsystems. IEEE Trans. Circuits Syst. I Regul. Pap. Javier De Mena Pacheco, Juan M. Carrillo, Tomás Palacios, Marisa López-Vallejo
2024	—	`conf`	A 0.7cm CICC Deniz Umut Yildirim, Jaeyoung Jung, Amr Elsakka, Giuseppe Moschetti, Miguel M. Lopez, Jonas Hansryd, Tomás Palacios, Anantha P. Chandrakasan
2024	—	`conf`	GaN E-mode Complementary Transistors Based on a GaN-on-Si Platform Operational at 350°C. DRC Shisong Luo, Cheng Chang, Qingyun Xie, Tao Li, Mingfei Xu, Ziyi He, Tomás Palacios, Yuji Zhao
2024	—	`conf`	Record High Temperature Performance in Scaled AlGaN/GaN-on-Si HEMTs up to 500°C. DRC John Niroula, Matthew A. Taylor, Qingyun Xie, Pradyot Yadav, Shisong Luo, Yuji Zhao, Tomás Palacios
2023	—	`conf`	First Demonstration of GaN RF HEMTs on Engineered Substrate. DRC Pradyot Yadav, Qingyun Xie, John Niroula, Gillian K. Micale, Hridibrata Pal, Tomás Palacios
2023	—	`conf`	Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C. VLSI Technology and Circuits Qingyun Xie, Mengyang Yuan, John Niroula, Bejoy Sikder, Shisong Luo, Kai Fu, Nitul S. Rajput, Ayan Biswas Pranta, Pradyot Yadav, Yuji Zhao, Nadim Chowdhury, Tomás Palacios
2022	A*	`conf`	Digital Fabrication of Pneumatic Actuators with Integrated Sensing by Machine Knitting. CHI Yiyue Luo, Kui Wu, Andrew Spielberg, Michael Foshey, Daniela Rus, Tomás Palacios, Wojciech Matusik
2021	A*	`conf`	Intelligent Carpet: Inferring 3D Human Pose From Tactile Signals. CVPR Yiyue Luo, Yunzhu Li, Michael Foshey, Wan Shou, Pratyusha Sharma, Tomás Palacios, Antonio Torralba, Wojciech Matusik
2021	A*	`conf`	KnitUI: Fabricating Interactive and Sensing Textiles with Machine Knitting. CHI Yiyue Luo, Kui Wu, Tomás Palacios, Wojciech Matusik
2021	—	`conf`	Performance Estimation of GaN CMOS Technology. DRC Nadim Chowdhury, Jaeyoung Jung, Qingyun Xie, Mengyang Yuan, Kai Cheng, Tomás Palacios
2021	—	`conf`	Small-Signal, High Frequency Performance of Vertical GaN FinFETs with fmax = 5.9 GHz. DRC Joshua A. Perozek, Ahmad Zubair, Tomás Palacios
2020	—	`conf`	Enabling Atmospheric Operation of Nanoscale Vacuum Channel Transistors. DRC Girish Rughoobur, J. Zhao, Lay Jain, Ahmad Zubair, Tomás Palacios, J. Kong, Akintunde Ibitayo Akinwande
2020	—	`conf`	First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate. DRC Ahmad Zubair, Joshua A. Perozek, John Niroula, O. Aktas, V. Odnoblyudov, Tomás Palacios
2020	—	`conf`	GaN Nanowire Field Emitters with a Self-Aligned Gate Process. DRC Pao-Chuan Shih, Girish Rughoobur, Peng Xiang, Kai Liu, Kai Cheng, Akintunde Ibitayo Akinwande, Tomás Palacios
2020	—	`conf`	Materials and Technology Issues for the Next Generation of Power Electronic Devices. DRC Ahmad Zubair, John Niroula, Nadim Chowdhury, Yuhao Zhang, Jori Lemettinen, Tomás Palacios
2018	—	`conf`	Degradation of vertical GaN FETs under gate and drain stress. IRPS Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Min Sun, Tomás Palacios
2018	J	`jnl`	Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments. Microelectron. Reliab. Maria Ruzzarin, Matteo Meneghini, Carlo De Santi, Min Sun, Tomás Palacios, Gaudenzio Meneghesso, Enrico Zanoni
2018	J	`jnl`	Frequency Response of Graphene Electrolyte-Gated Field-Effect Transistors. Sensors Charles Mackin, Elaine McVay, Tomás Palacios
2017	J	`jnl`	Hybrid CMOS/GaN 40-MHz Maximum 20-V Input DC-DC Multiphase Buck Converter. IEEE J. Solid State Circuits Eyal Aklimi, Daniel Piedra, Kevin Tien, Tomás Palacios, Kenneth L. Shepard
2015	—	`conf`	Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks. IRPS M. P. King, Jeramy Ray Dickerson, S. Dasgupta, Matthew J. Marinella, R. J. Kaplar, Daniel Piedra, Min Sun, Tomás Palacios
2013	J	`jnl`	Emerging graphene-based electronic & photonic devices, circuits, and systems [Scannning the Issue]. Proc. IEEE Elias Towe, Tomás Palacios, Maki Suemitsu
2013	J	`jnl`	Large-Area 2-D Electronics: Materials, Technology, and Devices. Proc. IEEE Allen Hsu, Han Wang, Yong Cheol Shin, Benjamin Mailly, Xu Zhang, Lili Yu, Yumeng Shi, Yi Hsien Lee, Madan Dubey, Ki Kang Kim, Jing Kong, Tomás Palacios
2012	—	`conf`	A new GaN HEMT nonlinear model for evaluation and design of 1-2 watt power amplifiers. MWSCAS Nick L. Marcoux, Christopher J. Fisher, Doug White, John Lachapelle, Tomás Palacios, Omair Saadat, Sameer Sonkusale
2012	—	`conf`	Scaling of InAlN/GaN power transistors. ESSDERC Daniel Piedra, Hyung-Seok Lee, Tomás Palacios, Xiang Gao, Shiping Guo
2010	J	`jnl`	A model for the critical voltage for electrical degradation of GaN high electron mobility transistors. Microelectron. Reliab. Jungwoo Joh, Feng Gao, Tomás Palacios, Jesús A. del Alamo
2010	J	`jnl`	Applications of graphene devices in RF communications. IEEE Commun. Mag. Tomás Palacios, Allen Hsu, Han Wang
2006	J	`jnl`	Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy. IEICE Trans. Electron. Andrea Corrion, Christiane Poblenz, Patrick Waltereit, Tomás Palacios, Siddharth Rajan, Umesh K. Mishra, Jim S. Speck