Tibor Grasser

86 papers C 1Journal 36Unranked 49
YearRankTypeTitle / Venue / Authors
2024 — conf
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
IRPS
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
2024 — conf
Neural Network with Optical Frequency-Coded ReLU.
OFC
Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk
2024 — conf
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors.
DRC
J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Zhepeng Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop
2023 — conf
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability.
IRPS
Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
2023 — conf
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
IRPS
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
2022 — conf
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays.
IRPS
Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
2022 — conf
Finding Suitable Gate Insulators for Reliable 2D FETs.
IRPS
Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser
2022 — conf
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities.
ESSDERC
Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser
2022 — conf
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
IRPS
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
2022 — conf
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study.
ESSDERC
Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser
2022 — conf
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
IRPS
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022 — conf
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM.
OFC
Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk
2021 — conf
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States.
IRPS
Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
2021 — conf
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide.
ESSDERC
Diego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser
2021 — conf
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface.
ESSDERC
Lukas Cvitkovich, Markus Jech, Dominic Waldhör, Al-Moatasem El-Sayed, Christoph Wilhelmer, Tibor Grasser
2021 — conf
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper.
ICICDT
Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer
2021 — conf
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network.
ESSDERC
Christoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser
2020 — conf
A Compact Physics Analytical Model for Hot-Carrier Degradation.
IRPS
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
2020 — conf
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics.
DRC
Yury Yu. Illarionov, Alexander G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, Stefan Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, Nikolai S. Sokolov, Tibor Grasser
2020 — conf
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping.
IRPS
Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser
2020 — conf
On the impact of mechanical stress on gate oxide trapping.
IRPS
Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf
2020 — conf
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures.
IRPS
Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
2020 — conf
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
IRPS
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
2020 — conf
Similarities and Differences of BTI in SiC and Si Power MOSFETs.
IRPS
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
2020 — conf
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release.
IRPS
Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
2019 — conf
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling.
IRPS
Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer
2019 — conf
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices.
IRPS
Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi
2019 — conf
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
IRPS
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
2019 — conf
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
ESSDERC
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
2018 J jnl
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.
Microelectron. Reliab.
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018 — conf
Annealing and Encapsulation of CVD-MoS2 FETs with 10
DRC
Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser
2018 — conf
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors.
IRPS
Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018 J jnl
Comphy - A compact-physics framework for unified modeling of BTI.
Microelectron. Reliab.
Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
2018 J jnl
Controversial issues in negative bias temperature instability.
Microelectron. Reliab.
James H. Stathis, Souvik Mahapatra, Tibor Grasser
2018 — conf
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI.
ESSDERC
Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser
2018 J jnl
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence.
Microelectron. Reliab.
Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser
2018 — conf
Reliability of next-generation field-effect transistors with transition metal dichalcogenides.
IRPS
Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser
2018 — conf
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
IRPS
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
2017 — conf
Physical modeling of the hysteresis in M0S2 transistors.
ESSDERC
Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
2017 J jnl
Transformation: nanotechnology - challenges in transistor design and future technologies.
Elektrotech. Informationstechnik
Bianka Ullmann, Tibor Grasser
2016 — conf
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.
ESSDERC
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
2016 J jnl
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units.
ACM Trans. Math. Softw.
Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser
2016 J jnl
ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures.
SIAM J. Sci. Comput.
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Andreas Morhammer, Tibor Grasser, Ansgar Jüngel, Siegfried Selberherr
2015 C conf
Characterization and modeling of reliability issues in nanoscale devices.
ISCAS
Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser
2015 J jnl
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab.
Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser
2015 — conf
Experimental evidences and simulations of trap generation along a percolation path.
ESSDERC
Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov
2015 — conf
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors.
IRPS
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser
2015 — conf
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors.
ESSDERC
Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser
2015 — conf
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures.
IRPS
Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken
2015 — conf
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements.
ESSDERC
Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser
2015 — conf
On the volatility of oxide defects: Activation, deactivation, and transformation.
IRPS
Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer
2015 — conf
Origins and implications of increased channel hot carrier variability in nFinFETs.
IRPS
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
2015 — conf
The defect-centric perspective of device and circuit reliability - From individual defects to circuits.
ESSDERC
Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2014 — conf
Characterization and modeling of charge trapping: From single defects to devices.
ICICDT
Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer
2014 J jnl
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics.
Microelectron. Reliab.
Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth
2014 J jnl
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors.
Microelectron. Reliab.
Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser
2014 J jnl
Performance Portability Study of Linear Algebra Kernels in OpenCL.
CoRR
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel
2014 — conf
Performance portability study of linear algebra kernels in OpenCL.
IWOCL
Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel
2014 J jnl
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units.
CoRR
Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser
2014 J jnl
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits.
IEEE Trans. Very Large Scale Integr. Syst.
Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken
2013 J jnl
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
2012 J jnl
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic.
Microelectron. Reliab.
Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken
2012 J jnl
Defect-centric perspective of time-dependent BTI variability.
Microelectron. Reliab.
Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken
2012 J jnl
New insights on the PBTI phenomena in SiON pMOSFETs.
Microelectron. Reliab.
Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser
2012 J jnl
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities.
Microelectron. Reliab.
Tibor Grasser
2012 — conf
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications.
ICICDT
Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken
2011 — conf
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors.
Facing the Multicore-Challenge
Karl Rupp, Ansgar Jüngel, Tibor Grasser
2011 J jnl
An analytical approach for physical modeling of hot-carrier induced degradation.
Microelectron. Reliab.
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, Christoph Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
2011 J jnl
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.
Microelectron. Reliab.
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
2010 J jnl
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab.
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, Christoph Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
2010 J jnl
Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors.
J. Comput. Phys.
Karl Rupp, Ansgar Jüngel, Tibor Grasser
2009 J jnl
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.
Microelectron. Reliab.
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser
2009 J jnl
On the temperature and voltage dependence of short-term negative bias temperature stress.
Microelectron. Reliab.
Philipp Hehenberger, Paul-Jürgen Wagner, Hans Reisinger, Tibor Grasser
2009 — conf
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models.
LSSC
M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr
2008 J jnl
On the temperature dependence of NBTI recovery.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
2007 J jnl
Comparison of deposition models for a TEOS LPCVD process.
Microelectron. Reliab.
Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr
2007 J jnl
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Michael Spevak, Tibor Grasser
2007 J jnl
Editorial.
Microelectron. Reliab.
Tibor Grasser, Siegfried Selberherr
2007 J jnl
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures.
Microelectron. Reliab.
Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer
2007 J jnl
VSP - A gate stack analyzer.
Microelectron. Reliab.
Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Goes, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr
2006 J jnl
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Johann Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr
2005 J jnl
An advanced equation assembly module.
Eng. Comput.
Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr
2004 J jnl
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination.
Microelectron. Reliab.
Tesfaye Ayalew, Andreas Gehring, Tibor Grasser, Siegfried Selberherr
2004 J jnl
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures.
Microelectron. J.
Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr
2003 J jnl
A review of hydrodynamic and energy-transport models for semiconductor device simulation.
Proc. IEEE
Tibor Grasser, Ting-Wei Tang, Hans Kosina, Siegfried Selberherr
2003 J jnl
Improving SiC lateral DMOSFET reliability under high field stress.
Microelectron. Reliab.
Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr