Thomas Aichinger

14 papers Journal 5Unranked 9
YearRankTypeTitle / Venue / Authors
2024 — conf
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs.
IRPS
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
2023 — conf
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs.
IRPS
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser
2022 — conf
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs.
IRPS
Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser
2021 — conf
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation.
IRPS
Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger
2021 — conf
A straightforward electrical method to determine screening capability of GOX extrinsics in arbitrary, commercially available SiC MOSFETs.
IRPS
Judith Berens, Thomas Aichinger
2020 — conf
Gate-oxide reliability and failure-rate reduction of industrial SiC MOSFETs.
IRPS
Thomas Aichinger, Matthias Schmidt
2020 — conf
Influence of high-voltage gate-oxide pulses on the BTI behavior of SiC MOSFETs.
IRPS
Sebastian Maaß, Hans Reisinger, Thomas Aichinger, Gerald Rescher
2020 — conf
Similarities and Differences of BTI in SiC and Si Power MOSFETs.
IRPS
Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser
2018 J jnl
Threshold voltage peculiarities and bias temperature instabilities of SiC MOSFETs.
Microelectron. Reliab.
Thomas Aichinger, Gerald Rescher, Gregor Pobegen
2018 — conf
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs.
IRPS
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger
2013 J jnl
Case study on multiple fault dependability and security evaluations.
Microprocess. Microsystems
Johannes Grinschgl, Armin Krieg, Christian Steger, Reinhold Weiss, Holger Bock, Josef Haid, Thomas Aichinger, Christiane Ulbricht
2013 J jnl
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
2011 J jnl
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.
Microelectron. Reliab.
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
2008 J jnl
On the temperature dependence of NBTI recovery.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser