Tetsuzo Ueda

11 papers Journal 5Unranked 6
YearRankTypeTitle / Venue / Authors
2019 — conf
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis.
IRPS
Eric E. Fabris, Matteo Meneghini, Carlo De Santi, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda
2019 — conf
Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT).
IRPS
Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda
2018 — conf
Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations.
IRPS
Ayanori Ikoshi, Masahiro Toki, Hiroto Yamagiwa, Daijiro Arisawa, Masahiro Hikita, Kazuki Suzuki, Manabu Yanagihara, Yasuhiro Uemoto, Kenichiro Tanaka, Tetsuzo Ueda
2016 — conf
A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters.
VLSI Circuits
Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, Tatsuo Morita, Kazuhiro Kaibara, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda
2016 J jnl
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS).
Microelectron. Reliab.
Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda
2015 J jnl
Conducted noise of GaN Schottky barrier diode in a DC-DC converter.
IEICE Electron. Express
Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda
2012 — conf
A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices.
ISSCC
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
2012 J jnl
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W.
IEICE Trans. Electron.
Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka
2011 — conf
Current status on GaN-based RF-power devices.
ESSCIRC
Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda
2008 J jnl
Enhancement-Mode n-Channel GaN MOSFETs Using HfO
IEICE Trans. Electron.
Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka
2007 J jnl
Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique.
IEICE Electron. Express
Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda