Tetsuya Suemitsu

12 papers Journal 8Unranked 4
YearRankTypeTitle / Venue / Authors
2023 — conf
Conversion Gain Enhancement of a UTC-PD-Integrated HEMT Photonic Double-Mixer by High-Intensity Optical Subcarrier Signal.
OFC
Dai Nakajima, Kazuki Nishimura, Mitsuki Watanabe, Tsung-Tse Lin, Keisuke Kasai, Masato Yoshida, Tetsuya Suemitsu, Taiichi Otsuji, Akira Satou
2015 J jnl
InP and GaN high electron mobility transistors for millimeter-wave applications.
IEICE Electron. Express
Tetsuya Suemitsu
2015 — conf
Sub-THz photonic frequency conversion using graphene and InP-based transistors for future fully coherent access network.
ECOC
Kenta Sugawara, Tetsuya Kawasaki, Gen Tamamushi, Mastura B. Hussin, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Shigeru Kuwano, Junichi Kani, Jun Terada, Taiichi Otsuji
2013 — conf
Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.
ESSDERC
Tetsuya Kawasaki, Adrian Dobroiu, Takanori Eto, Yuki Kurita, Kazuki Kojima, Yuhei Yabe, Hiroki Sugiyama, Takayuki Watanabe, Susumu Takabayashi, Tetsuya Suemitsu, Victor Ryzhii, Katsumi Iwatsuki, Taiichi Otsuji, Youichi Fukada, Junichi Kani, Jun Terada, Naoto Yoshimoto
2013 J jnl
High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique.
Proc. IEEE
Myung-Ho Jung, Goon-Ho Park, Tomohiro Yoshida, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Maki Suemitsu
2013 — conf
Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs.
ESSDERC
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu
2013 J jnl
Site-Selective Epitaxy of Graphene on Si Wafers.
Proc. IEEE
Hirokazu Fukidome, Yusuke Kawai, Hiroyuki Handa, Hiroki Hibino, Hidetoshi Miyashita, Masato Kotsugi, Takuo Ohkochi, Myung-Ho Jung, Tetsuya Suemitsu, Toyohiko Kinoshita, Taiichi Otsuji, Maki Suemitsu
2010 J jnl
Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems.
IEICE Trans. Electron.
Amine el Moutaouakil, Tsuneyoshi Komori, Kouhei Horiike, Tetsuya Suemitsu, Taiichi Otsuji
2007 J jnl
InP HEMT Technology for High-Speed Logic and Communications.
IEICE Trans. Electron.
Tetsuya Suemitsu, Masami Tokumitsu
2006 J jnl
An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets.
IEICE Electron. Express
Ryohei Urata, Ryo Takahashi, Tetsuya Suemitsu, Hiroyuki Suzuki
2006 J jnl
Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate.
IEICE Electron. Express
Tetsuya Suemitsu, Yoshino K. Fukai, Masami Tokumitsu, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni
2002 J jnl
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs.
Microelectron. Reliab.
Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama