Takahiro Mori - RankMe

21 papers Journal 5Unranked 16

Year	Rank	Type	Title / Venue / Authors
2026	J	`jnl`	Cryogenic CMOS Microwave Signal Selector Using Dual-Stage Injection-Locked Oscillator for Frequency-Multiplexed Qubit Control System. IEEE J. Solid State Circuits Hiroshi Fuketa, Ippei Akita, Hanpei Koike, Takahiro Mori
2025	—	`conf`	A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic Temperatures. IRPS Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Shinichi Takagi, Masaharu Kobayashi, Toshiro Hiramoto
2024	—	`conf`	Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation. DRC Shunsuke Shitakata, Hiroshi Oka, Kimihiko Kato, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Takahiro Mori
2024	J	`jnl`	Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs. IEEE Access Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
2023	J	`jnl`	A Cryogenic CMOS Current Integrator and Correlation Double Sampling Circuit for Spin Qubit Readout. IEEE Trans. Circuits Syst. I Regul. Pap. Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori
2023	—	`conf`	Determining the low-frequency noise source in cryogenic operation of short-channel bulk MOSFETs. VLSI Technology and Circuits Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
2023	J	`jnl`	Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality. IEEE Access Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
2023	—	`conf`	Silicon Technologies for Quantum Computing. ICICDT Takahiro Mori
2023	J	`jnl`	Single-Electron Transistor Operation of a Physically Defined Silicon Quantum Dot Device Fabricated by Electron Beam Lithography Employing a Negative-Tone Resist. IEICE Trans. Electron. Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera, Takahiro Mori
2022	—	`conf`	A Cryogenic CMOS Current Comparator for Spin Qubit Readout Achieving Fast Readout Time and High Current Resolution. VLSI Technology and Circuits Hiroshi Fuketa, Ippei Akita, Tomohiro Ishikawa, Hanpei Koike, Takahiro Mori
2022	—	`conf`	Effect of Conduction Band Edge States on Coulomb-Limiting Electron Mobility in Cryogenic MOSFET Operation. VLSI Technology and Circuits Hiroshi Oka, Takumi Inaba, Shota Iizuka, Hidehiro Asai, Kimihiko Kato, Takahiro Mori
2021	—	`conf`	Buried nanomagnet realizing high-speed/low-variability silicon spin qubits: implementable in error-correctable large-scale quantum computers. VLSI Circuits Shota Iizuka, Kimihiko Kato, Atsushi Yagishita, Hidehiro Asai, Tetsuya Ueda, Hiroshi Oka, Junichi Hattori, Tsutomu Ikegami, Koichi Fukuda, Takahiro Mori
2015	—	`conf`	Control moment gyroscope for swing motion control. ROBIO Takahiro Mori, Guillermo Enriquez, Huei Ee Yap, Shuji Hashimoto
2015	—	`conf`	PBTI for N-type tunnel FinFETs. ICICDT Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara
2014	—	`conf`	Development of constant torque device and its application to power assist systems. AIM Yasuhiro Minamiyama, Takanori Kiyota, Takahiro Mori, Noboru Sugimoto
2014	—	`conf`	Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. ESSDERC Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
2014	—	`conf`	Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configuration. ESSDERC Shinji Migita, Takashi Matsukawa, Takahiro Mori, Koichi Fukuda, Yukinori Morita, Wataru Mizubayashi, Kazuhiko Endo, Yongxun Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota
2013	—	`conf`	Guidelines for symmetric threshold voltage in tunnel FinFETs with single and dual metal gate electrodes. ESSDERC Wataru Mizubayashi, Koichi Fukuda, Takahiro Mori, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Shin-ichi O'Uchi, Yuki Ishikawa, Shinji Migita, Yukinori Morita, Akihito Tanabe, Junichi Tsukada, Hiromi Yamauchi, Meishoku Masahara, Hiroyuki Ota
2013	—	`conf`	Performance limit of parallel electric field tunnel FET and improvement by modified gate and channel configurations. ESSDERC Yukinori Morita, Takahiro Mori, Shinji Migita, Wataru Mizubayashi, Akihito Tanabe, Koichi Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota
2012	—	`conf`	Photometric Linearization by Robust PCA for Shadow and Specular Removal. VISIGRAPP (Selected Papers) Takahiro Mori, Ryohei Taketa, Shinsaku Hiura, Kosuke Sato
2012	—	`conf`	Shadow and Specular Removal by Photometric Linearization based on PCA with Outlier Exclusion. VISAPP (1) Takahiro Mori, Shinsaku Hiura, Kosuke Sato