Takahiro Iizuka

16 papers Journal 8Unranked 8

Year	Rank	Type	Title / Venue / Authors
2023	—	`conf`	Simulation-Based Switching Performance of Self-Heating Effect on SiC-based Power-Electronic Circuits. ISDCS Subhajit Das, Takahiro Iizuka
2021	—	`conf`	History effect investigation in SOI MOSFET for minimizing impact on circuit performance. ISDCS Soumajit Ghosh, Takahiro Iizuka
2021	J	`jnl`	Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access Abhishek Kar, Mitiko Miura-Mattausch, Mainak Sengupta, Dondee Navarro, Hideyuki Kikuchihara, Takahiro Iizuka, Hafizur Rahaman, Hans Jürgen Mattausch
2020	—	`conf`	Carrier Dynamics in Lightly-doped Resistance Region in Power MOSFETs. ISDCS Takahiro Iizuka
2020	—	`conf`	History Effect on Circuit Performance of SOI-MOSFETs. ISDCS Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch
2020	—	`conf`	Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. ISDCS Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch
2019	J	`jnl`	Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. IEICE Trans. Electron. Arnab Mukhopadhyay, Tapas Kumar Maiti, Sandip Bhattacharya, Takahiro Iizuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hafizur Rahaman, Sadayuki Yoshitomi, Dondee Navarro, Hans Jürgen Mattausch
2019	—	`conf`	Validation on Duality in Impact-ionization Carrier Generation at the Onset of Snapback in Power MOSFETs. ISDCS Takahiro Iizuka, Hiroyuki Hashigami, Mitiko Miura-Mattausch, Hans Jürgen Mattausch
2018	—	`conf`	Compact Modeling for Power Efficient Circuit Design. ESSDERC Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch
2013	J	`jnl`	Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions. IEICE Trans. Electron. Chenyue Ma, Hans Jürgen Mattausch, Masataka Miyake, Takahiro Iizuka, Kazuya Matsuzawa, Seiichiro Yamaguchi, Teruhiko Hoshida, Akinori Kinoshita, Takahiko Arakawa, Jin He, Mitiko Miura-Mattausch
2013	J	`jnl`	Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch
2012	J	`jnl`	Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch
2009	J	`jnl`	Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors. IEICE Trans. Electron. Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shunsuke Miyamoto
2009	J	`jnl`	Non-Quasi-Static Carrier Dynamics of MOSFETs under Low-Voltage Operation. IEICE Trans. Electron. Masataka Miyake, Daisuke Hori, Norio Sadachika, Uwe Feldmann, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Takahiro Iizuka, Kazuya Matsuzawa, Yasuyuki Sahara, Teruhiko Hoshida, Toshiro Tsukada
2008	J	`jnl`	Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations. Math. Comput. Simul. Tatsuya Ezaki, Dondee Navarro, Youichi Takeda, Norio Sadachika, Gaku Suzuki, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto
2005	—	`conf`	MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime. CICC Youichi Takeda, Dondee Navarro, Shingo Chiba, Mitiko Miura-Mattausch, Hans Jürgen Mattausch, Tatsuya Ohguro, Takahiro Iizuka, Masahiko Taguchi, Shigetaka Kumashiro, Shunsuke Miyamoto