Tae-Young Oh

24 papers Journal 8Unranked 16
YearRankTypeTitle / Venue / Authors
2025 — conf
30.3 A 24Gb 42.5Gb/s GDDR7 DRAM with Low-Power WCK Distribution, an RC-Optimized Dual-Emphasis TX, and Voltage/Time-Margin-Enhanced Power Reduction.
ISSCC
Sang-Hoon Kim, Jaehyeok Baek, Moon-Chul Choi, Daewoong Lee, Donggun An, Se-Mi Kim, Yeonggeun Song, Minkyo Shim, Sung-Yong Cho, Dongha Lee, Gun-hee Cho, Inwoo Jun, Juseop Park, Taeyoon Lee, Hwan-Chul Jung, Chanyong Lee, Gil-Young Kang, Hye-Ran Kim, Jongmyung Lee, Young Su Joo, Hyo-jin Jung, Bokyeon Won, Ji-Hak Yu, Sangkeun Han, Yechan Hwang, Chungman Kim, Seok-Jung Kim, Youngseok Lee, Young-Tae Kim, Myeong-O. Kim, Wonhwa Shin, Tae-Young Oh, Sangjoon Hwang
2025 J jnl
A 16-Gb 37-Gb/s GDDR7 DRAM With PAM3-Optimized TRX Equalization and ZQ Calibration.
IEEE J. Solid State Circuits
Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sang-Hoon Kim, Daewoong Lee, Seongyeal Yang, Se-Mi Kim, Gil-Young Kang, Juseop Park, Kyung-Ho Lee, Hwan-Chul Jung, Gun-hee Cho, Chan-Yong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sang-Yong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hongjun Jin, Youngseok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, Taehoon Park, Changsik Yoo, Tae-Young Oh, Sangjoon Hwang
2025 — conf
A 16Gb 12.7Gb/s/pin LPDDR5-Ultra-Pro DRAM with 4-Phase Self-Calibration and AC-Coupled Transceiver Equalization in a 5
ISSCC
Jin-Hyeok Baek, Jang-Hoo Kim, Yoo-Chang Sung, Jae-Woo Jeong, Jin-Kwan Park, Hyun-Kyu Oh, Bo-Hyeon Lee, Dong-Wan Ko, Tae-Seob Oh, Seung-Gi Hong, Chang-Ki Kwon, Daihyun Lim, Myeong-O. Kim, Seung-Jun Bae, Tae-Young Oh, Sang-Jun Hwang
2024 — conf
13.2 A 32Gb 8.0Gb/s/pin DDR5 SDRAM with a Symmetric-Mosaic Architecture in a 5
ISSCC
IkJoon Choi, Seunghwan Hong, Kihyun Kim, Jeongsik Hwang, Seunghan Woo, Young-Sang Kim, Cheongryong Cho, Eun-Young Lee, Hun-Jae Lee, Min-su Jung, Hee-Yun Jung, Ju-Seong Hwang, Junsub Yoon, Wonmook Lim, Hyeong-Jin Yoo, Won-Ki Lee, Jung-Kyun Oh, Dong-Su Lee, Jong-eun Lee, Jun-Hyung Kim, Young-Kwan Kim, Su-Jin Park, Byung-Kyu Ho, Byongwook Na, Hye-In Choi, Chung-Ki Lee, Soo-Jung Lee, Hyunsung Shin, Young-Kyu Lee, Jang-Woo Ryu, Sangwoong Shin, Sungchul Park, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Sangjoon Hwang
2024 — conf
13.6 A 16Gb 37Gb/s GDDR7 DRAM with PAM3-Optimized TRX Equalization and ZQ Calibration.
ISSCC
Sung-Yong Cho, Moon-Chul Choi, Jaehyeok Baek, Donggun An, Sanghoon Kim, Daewoong Lee, Seongyeal Yang, Gil-Young Kang, Juseop Park, Kyungho Lee, Hwan-Chul Jung, Gun-hee Cho, Chanyong Lee, Hye-Ran Kim, Yong-Jae Shin, Hanna Park, Sangyong Lee, Jonghyuk Kim, Bokyeon Won, Jungil Mok, Kijin Kim, Unhak Lim, Hongjun Jin, Youngseok Lee, Young-Tae Kim, Heonjoo Ha, Jinchan Ahn, Wonju Sung, Yoontaek Jang, Hoyoung Song, Hyodong Ban, Taehoon Park, Tae-Young Oh, Changsik Yoo, Sangjoon Hwang
2024 J jnl
A 1.01-V 8.5-Gb/s/pin 16-Gb LPDDR5x SDRAM With Advanced I/O Circuitry for High-Speed and Low-Power Applications.
IEEE J. Solid State Circuits
Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Dong-Hun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Joo-Youn Lim, Daihyun Lim, Seung-Jun Bae, Tae-Young Oh
2024 — conf
A 1.06V 5Gb/s/pin 16Gb LPDDR4x DRAM Adopting Sense Amplifier with AC-Coupled Equalizer, Stacked Output Driver, and Clock MUX with Inverter-Based Transmission Gate for Mobile and Automotive Application.
A-SSCC
Young-Gil Go, Hyun-A. Ahn, Yoo-Chang Sung, Myung-Hun Jung, Ji-Geon Yeom, Hun-Dae Choi, Janghoo Kim, Hyunjin Ko, Miyoung Woo, Seong-O. Huh, Seung-Jun Bae, Tae-Young Oh
2024 J jnl
A PAM-4 Crosstalk Compensation Receiver Using an RC Circuit per Pin for 4×24 Gb/s/Pin Single-Ended DRAM Interface.
IEEE Trans. Circuits Syst. I Regul. Pap.
Ho-Jun Kim, Sung-Yong Cho, Tae-Young Oh, Hong-June Park
2023 — conf
A 1.01V 8.5Gb/s/pin 16Gb LPDDR5x SDRAM with Self-Pre-Emphasized Stacked-Tx, Supply Voltage Insensitive Rx, and Optimized Clock Using 4th-Generation 10nm DRAM Process for High-Speed and Low-Power Applications.
A-SSCC
Hyun-A. Ahn, Yoo-Chang Sung, Yong-Hun Kim, Janghoo Kim, Kihan Kim, Donghun Lee, Young-Gil Go, Jae-Woo Lee, Jae-Woo Jung, Yong-Hyun Kim, Garam Choi, Jun-Seo Park, Bo-Hyeon Lee, Jin-Hyeok Baek, Daesik Moon, Daihyun Lim, Seung-Jun Bae, Young-Soo Sohn, Changsik Yoo, Tae-Young Oh
2023 J jnl
A 16-Gb T-Coil-Based GDDR6 DRAM With Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus Achieving 27-Gb/s/Pin in NRZ.
IEEE J. Solid State Circuits
Daewoong Lee, Jaehyeok Baek, Hye-Jung Kwon, Daehyun Kwon, Chulhee Cho, Sang-Hoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoung-Joo Kim, Ho-Seok Seol, Juhwan Kim, Jung-Bum Shin, Gil-Young Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chan-Yong Lee, SeungSeob Lee, Taehoon Park, Chi-Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, Sangjoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee
2022 — conf
A 16Gb 27Gb/s/pin T-coil based GDDR6 DRAM with Merged-MUX TX, Optimized WCK Operation, and Alternative-Data-Bus.
ISSCC
Daewoong Lee, Hye-Jung Kwon, Daehyun Kwon, Jaehyeok Baek, Chulhee Cho, Sanghoon Kim, Donggun An, Chulsoon Chang, Unhak Lim, Jiyeon Im, Wonju Sung, Hye-Ran Kim, Sun-Young Park, Hyoungjoo Kim, Ho-Seok Seol, Juhwan Kim, Junabum Shin, Kil-Youna Kang, Yong-Hun Kim, Sooyoung Kim, Wansoo Park, Seok-Jung Kim, Chanyong Lee, SeungSeob Lee, Taehoon Park, Chi Sung Oh, Hyodong Ban, Hyungjong Ko, Hoyoung Song, Tae-Young Oh, Sangjoon Hwang, Kyung Suk Oh, Jung-Hwan Choi, Jooyoung Lee
2021 — conf
Industry's First 7.2 Gbps 512GB DDR5 Module.
HCS
Sung Joo Park, Jonghoon J. Kim, Kun Joo, Young-Ho Lee, Kyoungsun Kim, Young-Tae Kim, Woo-Jin Na, IkJoon Choi, Hye-Seung Yu, Wonyoung Kim, Ju-Yeon Jung, Jaejun Lee, Dohyung Kim, Young-Uk Chang, Gong-Heum Han, Hangi-Jung, Sunwon Kang, Jeonghyeon Cho, Hoyoung Song, Tae-Young Oh, Young-Soo Sohn, Sangjoon Hwang, Jooyoung Lee
2020 J jnl
A 7.5 Gb/s/pin 8-Gb LPDDR5 SDRAM With Various High-Speed and Low-Power Techniques.
IEEE J. Solid State Circuits
Kyung-Soo Ha, SeungSeob Lee, Youn-Sik Park, Hyuck-Joon Kwon, Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Kwang-Il Park, Jung-Bae Lee, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Hyong-Ryol Hwang, Dukha Park, Young-Hwa Kim, Young Hoon Son, Byongwook Na
2019 — conf
A 7.5Gb/s/pin LPDDR5 SDRAM With WCK Clocking and Non-Target ODT for High Speed and With DVFS, Internal Data Copy, and Deep-Sleep Mode for Low Power.
ISSCC
Kyung-Soo Ha, Chang-Kyo Lee, Dongkeon Lee, Daesik Moon, Jin-Hun Jang, Hyong-Ryol Hwang, Hyung-Joon Chi, Junghwan Park, Seungjun Shin, Dukha Park, Sang-Yun Kim, Sukhyun Lim, Kiwon Park, YeonKyu Choi, Young-Hwa Kim, Younghoon Son, Hyunyoon Cho, Byongwook Na, Hyo-Joo Ahn, SeungSeob Lee, Seouk-Kyu Choi, Youn-Sik Park, Seok-Hun Hyun, Soobong Chang, Hyuck-Joon Kwon, Jung-Hwan Choi, Tae-Young Oh, Young-Soo Sohn, Kwang-Il Park, Seong-Jin Jang
2017 — conf
23.2 A 5Gb/s/pin 8Gb LPDDR4X SDRAM with power-isolated LVSTL and split-die architecture with 2-die ZQ calibration scheme.
ISSCC
Chang-Kyo Lee, Yoon-Joo Eom, Jin-Hee Park, Junha Lee, Hye-Ran Kim, Kihan Kim, Young Choi, Ho-Jun Chang, Jonghyuk Kim, Jong-Min Bang, Seungjun Shin, Hanna Park, Su-Jin Park, Young-Ryeol Choi, Hoon Lee, Kyong-Ho Jeon, Jae-Young Lee, Hyo-Joo Ahn, Kyoung-Ho Kim, Jung-Sik Kim, Soobong Chang, Hyong-Ryol Hwang, Duyeul Kim, Yoon-Hwan Yoon, Seok-Hun Hyun, Joon-Young Park, Yoon-Gyu Song, Youn-Sik Park, Hyuck-Joon Kwon, Seung-Jun Bae, Tae-Young Oh, Indal Song, Yong-Cheol Bae, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang, Gyo-Young Jin
2017 — conf
Dual-loop 2-step ZQ calibration for dedicated power supply voltage in LPDDR4 SDRAM.
A-SSCC
Chang-Kyo Lee, Junha Lee, Kiho Kim, Jin-Seok Heo, Gil-Hoon Cha, Jin-Hyeok Baek, Daesik Moon, Yoon-Joo Eom, Tae-sung Kim, Hyunyoon Cho, Young Hoon Son, Seonghwan Kim, Jong-Wook Park, Sewon Eom, Si-Hyeong Cho, Young-Ryeol Choi, SeungSeob Lee, Kyoung-Soo Ha, Youngseok Kim, Bo-Tak Lim, Dae-Hee Jung, Eungsung Seo, Kyoung-Ho Kim, Yoon-Gyu Song, Youn-Sik Park, Tae-Young Oh, Seung-Jun Bae, Indal Song, Seok-Hun Hyun, Joon-Young Park, Hyuck-Joon Kwon, Young-Soo Sohn, Jung-Hwan Choi, Kwang-Il Park, Seong-Jin Jang
2015 J jnl
A 3.2 Gbps/pin 8 Gbit 1.0 V LPDDR4 SDRAM With Integrated ECC Engine for Sub-1 V DRAM Core Operation.
IEEE J. Solid State Circuits
Tae-Young Oh, Hoeju Chung, Jun-Young Park, Ki-Won Lee, Seung-Hoon Oh, Su-Yeon Doo, Hyoung-Joo Kim, Changyong Lee, Hye-Ran Kim, Jong-Ho Lee, Jin-Il Lee, Kyung-Soo Ha, Young-Ryeol Choi, Young-Chul Cho, Yong-Cheol Bae, Taeseong Jang, Chulsung Park, Kwang-Il Park, SeongJin Jang, Joo-Sun Choi
2014 — conf
25.1 A 3.2Gb/s/pin 8Gb 1.0V LPDDR4 SDRAM with integrated ECC engine for sub-1V DRAM core operation.
ISSCC
Tae-Young Oh, Hoeju Chung, Young-Chul Cho, Jang-Woo Ryu, Kiwon Lee, Changyoung Lee, Jin-Il Lee, Hyoung-Joo Kim, Min-Soo Jang, Gong-Heum Han, Kihan Kim, Daesik Moon, Seung-Jun Bae, Joon-Young Park, Kyung-Soo Ha, Jaewoong Lee, Su-Yeon Doo, Jung-Bum Shin, Chang-Ho Shin, Kiseok Oh, Doo-Hee Hwang, Taeseong Jang, Chulsung Park, Kwang-Il Park, Jung-Bae Lee, Joo-Sun Choi
2014 J jnl
A PSRR Enhancing Method for GRO TDC Based Clock Generation Systems.
IEEE Trans. Circuits Syst. I Regul. Pap.
Yutao Liu, Yizhi Han, Woogeun Rhee, Tae-Young Oh, Zhihua Wang
2011 — conf
A 40nm 2Gb 7Gb/s/pin GDDR5 SDRAM with a programmable DQ ordering crosstalk equalizer and adjustable clock-tracking BW.
ISSCC
Seung-Jun Bae, Young-Soo Sohn, Tae-Young Oh, Si-Hong Kim, Yun-Seok Yang, Dae-Hyun Kim, Sang-Hyup Kwak, Ho-Seok Seol, Chang-Ho Shin, Min-Sang Park, Gong-Heom Han, Byeong-Cheol Kim, Yong-Ki Cho, Hye-Ran Kim, Su-Yeon Doo, Young-Sik Kim, Dong-Seok Kang, Young-Ryeol Choi, Sam-Young Bang, Sun-Young Park, Yong-Jae Shin, Gil-Shin Moon, Cheol-Goo Park, Woo-Seop Kim, Hyang-Ja Yang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun
2011 J jnl
A 7 Gb/s/pin 1 Gbit GDDR5 SDRAM With 2.5 ns Bank to Bank Active Time and No Bank Group Restriction.
IEEE J. Solid State Circuits
Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun
2010 — conf
A 7Gb/s/pin GDDR5 SDRAM with 2.5ns bank-to-bank active time and no bank-group restriction.
ISSCC
Tae-Young Oh, Young-Soo Sohn, Seung-Jun Bae, Min-Sang Park, Ji-Hoon Lim, Yong-Ki Cho, Dae-Hyun Kim, Dong-Min Kim, Hye-Ran Kim, Hyun-Joong Kim, Jin-hyun Kim, Jin-Kook Kim, Young-Sik Kim, Byeong-Cheol Kim, Sang-Hyup Kwak, Jae-Hyung Lee, Jae-Young Lee, Chang-Ho Shin, Yun-Seok Yang, Beom-Sig Cho, Sam-Young Bang, Hyang-Ja Yang, Young-Ryeol Choi, Gil-Shin Moon, Cheol-Goo Park, Seokwon Hwang, Jeong-Don Lim, Kwang-Il Park, Joo-Sun Choi, Young-Hyun Jun
2006 — conf
A Digital PLL with 5-Phase Digital PFD for Low Long-term Jitter Clock Recovery.
CICC
Tae-Young Oh, Seung-Hyun Yi, Sung-Hyun Yang, Byong-Chan Lim, Kuk-Tae Hong
2002 — conf
AC Analysis of Thin Gate Oxide MOS with Quantum Mechanical Corrections.
ISQED
Tae-Young Oh, Zhiping Yu, Robert W. Dutton