Sébastien Fregonese

20 papers C 1Journal 4Unranked 15
YearRankTypeTitle / Venue / Authors
2024 — conf
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications.
BCICTS
Pascal Chevalier, Florian Cacho, C. Durand, N. Derrier, V. Millon, Frederic Monsieur, A. Gauthier, P. Billy, Sébastien Fregonese, Thomas Zimmer, H. Audouin, Michel Buczko, Didier Céli, C. Deglise-Favre, Cheikh Diouf, O. Foissey, M. Hello, N. Guitard, S. Madassamy, S. Ramirez-Ruiz, C. Renard, F. Sonnerat, V. Yon, D. Gloria, G. Waltisperger
2024 — conf
On the Safe Operating Area of InP HBTs.
BCICTS
Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter
2023 — conf
Electro-Thermal Investigation of SiGe HBTs: A Review.
BCICTS
Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty
2021 — conf
Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.
BCICTS
Sébastien Fregonese, Chhandak Mukherjee, Holger Rücker, Pascal Chevalier, Gerhard Fischer, Didier Céli, Marina Deng, Marine Couret, François Marc, Cristell Maneux, Thomas Zimmer
2019 — conf
TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range.
BCICTS
Soumya Ranjan Panda, Sébastien Fregonese, Anjan Chakravorty, Thomas Zimmer
2018 — conf
2D RF Electronics: from devices to circuits - challenges and applications.
DRC
D. Fadi, Wei Wei, Emiliano Pallecchi, M. Anderson, J. Stake, Marina Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy
2017 — conf
A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology.
SBCCI
Tony Hanna, Nathalie Deltimple, Sébastien Fregonese
2017 — conf
A wideband highly efficient class-J integrated power amplifier for 5G applications.
NEWCAS
Tony Hanna, Nathalie Deltimple, Sébastien Fregonese
2017 J jnl
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications.
Proc. IEEE
Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer
2016 — conf
Physics-based electrical compact model for monolayer Graphene FETs.
ESSDERC
Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy
2015 — conf
A new physics-based compact model for Bilayer Graphene Field-Effect Transistors.
ESSDERC
Jorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer
2015 — conf
Characterization and modeling of low-frequency noise in CVD-grown graphene FETs.
ESSDERC
C. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, Wei Wei
2015 C conf
Graphene FET evaluation for RF and mmWave circuit applications.
ISCAS
Sébastien Fregonese, Jorgue Daniel Aguirre Morales, Magali De Matos, Cristell Maneux, Thomas Zimmer
2015 — conf
Substrate-coupling effect in BiCMOS technology for millimeter wave applications.
NEWCAS
Sébastien Fregonese, Rosario D'Esposito, Magali De Matos, Andreas Kohler, Cristell Maneux, Thomas Zimmer
2014 — conf
Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.
ESSDERC
C. Mukherjee, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, Henri Happy, David Mele
2012 — conf
Pulsed I(V) - pulsed RF measurement system for microwave device characterization with 80ns/45GHz.
ESSDERC
Mario Weis, Sébastien Fregonese, Marco Santorelli, Amit Kumar Sahoo, Cristell Maneux, Thomas Zimmer
2011 J jnl
Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices.
IEEE Trans. Circuits Syst. I Regul. Pap.
Si-Yu Liao, Jean-Marie Retrouvey, Guillaume Agnus, Weisheng Zhao, Cristell Maneux, Sébastien Fregonese, Thomas Zimmer, Djaafar Chabi, Arianna Filoramo, Vincent Derycke, Christian Gamrat, Jacques-Olivier Klein
2010 — conf
From nanoscale technology scenarios to compact device models for ambipolar devices.
ICECS
Sébastien Fregonese, Cristell Maneux, Thomas Zimmer
2007 J jnl
CNTFET Modeling and Reconfigurable Logic-Circuit Design.
IEEE Trans. Circuits Syst. I Regul. Pap.
Ian O'Connor, Junchen Liu, Frédéric Gaffiot, Fabien Prégaldiny, Christophe Lallement, Cristell Maneux, Johnny Goguet, Sébastien Fregonese, Thomas Zimmer, Lorena Anghel, Trong-Trinh Dang, Régis Leveugle
2004 J jnl
Representation of the SiGe HBT's thermal impedance by linear and recursive networks.
Microelectron. Reliab.
Hassene Mnif, Thomas Zimmer, Jean Luc Battaglia, Sébastien Fregonese