Sylvain L. Delage

11 papers Journal 10Unranked 1
YearRankTypeTitle / Venue / Authors
2018 J jnl
Stability and robustness of InAlGaN/GaN HEMT in short-term DC tests for different passivation schemes.
Microelectron. Reliab.
Mourad Oualli, Christian Dua, O. Patard, P. Altuntas, S. Piotrowicz, Piero Gamarra, Cedric Lacam, J.-C. Jacquet, L. Teisseire, D. Lancereau, Eric Chartier, C. Potier, Sylvain L. Delage
2014 — conf
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences.
ESSDERC
Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage
2014 J jnl
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs.
Microelectron. Reliab.
Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni
2013 J jnl
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate.
Microelectron. Reliab.
Isabella Rossetto, Fabiana Rampazzo, Riccardo Silvestri, Alberto Zanandrea, Christian Dua, Sylvain L. Delage, Mourad Oualli, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso
2012 J jnl
Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors.
Microelectron. Reliab.
Jaroslav Kovác, Alexander Satka, Ales Chvála, D. Donoval, Peter Kordos, Sylvain L. Delage
2012 J jnl
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure.
Microelectron. Reliab.
Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn
2005 J jnl
A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applications.
Microelectron. Reliab.
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, Sylvain L. Delage
2004 J jnl
Reliability Investigation of Gallium Nitride HEMT.
Microelectron. Reliab.
A. Sozza, Christian Dua, Erwan Morvan, Bertrand Grimbert, V. Hoel, Sylvain L. Delage, N. Chaturvedi, Richard Lossy, Joachim Würfl
2003 J jnl
Wide band gap semiconductor reliability : Status and trends.
Microelectron. Reliab.
Sylvain L. Delage, Christian Dua
2001 J jnl
Defect detection and modelling using pulsed electrical stress for reliability investigations of InGaP HBT.
Microelectron. Reliab.
Cezary Sydlo, Bastian Mottet, Husin Ganis, Hans L. Hartnagel, Viktor Krozer, Sylvain L. Delage, Simone Cassette, Eric Chartier, D. Floriot, Steven Bland
2001 J jnl
Heterojunction bipolar transistors for millimeter waves applications: trends and achievements.
Ann. des Télécommunications
Sylvain L. Delage