Sylvain Barraud

27 papers A 1Journal 4Unranked 22

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Compact MEOL OxRAM with 14 Conductance Levels for Dense Embedded Inference Computing. IRPS Joel Minguet Lopez, Sylvain Barraud, Manon Dampfhoffer, Aurelie Souhaité, Theophile Dubreuil, Jean-Michel Pedini, Corinne Comboroure, Ahmed Gharbi, François Boulard, Clément Castan, Amélie Lambert, François Andrieu
2025	—	`conf`	Novel and Efficient Hyperdimensional Encoding of Surface Electromyography Signals for Hand Gesture Recognition. BIOSTEC (1) Ancelin Salerno, Sylvain Barraud
2024	A	`conf`	Evaluation and implementation of High-Dimensionnal Computing for gesture recognition using sEMG signals. ICCAD Ancelin Salerno, Sylvain Barraud
2024	—	`conf`	Experimental Decomposition of the Carrier Mobility in the Conduction Planes of 2-Level Stacked Nanowires. CCE Giovanni Almeida Matos, Jaime CalÇade Rodrigues, Michelly de Souza, Mikaël Cassé, Sylvain Barraud, Olivier Faynot, Marcelo Antonio Pavanello
2023	—	`conf`	Integration of HfO2-based 3D OxRAM with GAA stacked-nanosheet transistor for high-density embedded memory. ESSDERC Theophile Dubreuil, Sylvain Barraud, Jean-Michel Pedini, Jean-Michel Hartmann, François Boulard, A. Sarrazin, Ahmed Gharbi, Johannes Sturm, Amélie Lambert, Simon Martin, Niccolo Castellani, A. Anotta, A. Magalhaes-Lucas, Aurelie Souhaite, François Andrieu
2022	—	`conf`	A novel 3D 1T1R RRAM architecture for memory-centric Hyperdimensional Computing. IMW Theophile Dubreuil, P. Amari, Sylvain Barraud, Joris Lacord, Eduardo Esmanhotto, Valentina Meli, S. Martin, Niccolo Castellani, Bernard Previtali, François Andrieu
2021	—	`conf`	Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. ESSDERC Michelly de Souza, Sylvain Barraud, Mikaël Cassé, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
2021	—	`conf`	Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization. ESSCIRC R. Midahuen, Bernard Previtali, C. Fontelaye, Guillaume Nonglaton, Sylvain Barraud, V. Stambouli
2021	—	`conf`	Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization. ESSDERC R. Midahuen, Bernard Previtali, C. Fontelaye, Guillaume Nonglaton, V. Stambouli, Sylvain Barraud
2020	J	`jnl`	Ultra-High-density 3D vertical RRAM with stacked JunctionLess nanowires for In-Memory-Computing applications. CoRR Mona Ezzadeen, D. Bosch, Bastien Giraud, Sylvain Barraud, Jean-Philippe Noël, Didier Lattard, Joris Lacord, Jean-Michel Portal, François Andrieu
2019	—	`conf`	Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. ESSDERC Renan Trevisoli, Rodrigo Trevisoli Doria, Sylvain Barraud, Marcelo Antonio Pavanello
2018	—	`conf`	Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo
2018	—	`conf`	Si MOS technology for spin-based quantum computing. ESSDERC Louis Hutin, Benoit Bertrand, Romain Maurand, Alessandro Crippa, Matias Urdampilleta, Y. J. Kim, A. Amisse, Heorhii Bohuslavskyi, L. Bourdet, Sylvain Barraud, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, C. Bauerle, Tristan Meunier, Silvano De Franceschi, Maud Vinet
2018	—	`conf`	Towards scalable silicon quantum computing. DRC Maud Vinet, Louis Hutin, Benoit Bertrand, Heorhii Bohuslavskyi, Andrea Corna, Anthony Amisse, Alessandro Crippa, Léo Bourdet, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Marc Sanquer, Xavier Jehl, Yann-Michel Niquet, Silvano De Franceschi, Tristan Meunier
2017	—	`conf`	A new method for junctionless transistors parameters extraction. ESSDERC Renan Trevisoli Doria, Rodrigo Trevisoli Doria, Michelly de Souza, Marcelo Antonio Pavanello, Sylvain Barraud
2017	J	`jnl`	Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K. Microelectron. Reliab. Bruna Cardoso Paz, Renan Trevisoli Doria, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot, Marcelo Antonio Pavanello
2017	—	`conf`	SOI CMOS technology for quantum information processing. ICICDT Louis Hutin, Benoit Bertrand, Romain Maurand, Matias Urdampilleta, Baptiste Jadot, Heorhii Bohuslavskyi, L. Bourdet, Yann-Michel Niquet, Xavier Jehl, Sylvain Barraud, C. Bauerle, Tristan Meunier, Marc Sanquer, Silvano De Franceschi, Maud Vinet
2016	—	`conf`	Analog performance of strained SOI nanowires down to 10K. ESSDERC Bruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot
2016	J	`jnl`	Drain current model for short-channel triple gate junctionless nanowire transistors. Microelectron. Reliab. Bruna Cardoso Paz, Mikaël Cassé, Sylvain Barraud, Gilles Reimbold, Olivier Faynot, F. Avila-Herrera, Antonio Cerdeira, Marcelo Antonio Pavanello
2016	—	`conf`	Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETs. ESSDERC R. Lavieville, Theano A. Karatsori, Christoforos G. Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo
2015	—	`conf`	Back-gate effects and detailed characterization of junctionless transistor. ESSDERC Mukta Singh Parihar, Fanyu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu
2015	—	`conf`	Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model. ESSDERC J. Pelloux-Prayer, Mikaël Cassé, François Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold
2013	—	`conf`	Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs. ESSDERC Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Gérard Ghibaudo, Hiroshi Iwai, Gilles Reimbold
2013	—	`conf`	Low-temperature transport characteristics in SOI and sSOI nanowires down to 8nm width: Evidence of IDS and mobility oscillations. ESSDERC Remi Coquand, Sylvain Barraud, Mikaël Cassé, Masahiro Koyama, Virginie Maffini-Alvaro, Marie-Pierre Samson, Lucie Tosti, Xavier Mescot, Gérard Ghibaudo, Stéphane Monfray, Frédéric Boeuf, Olivier Faynot, Barbara De Salvo
2012	—	`conf`	Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities. ESSDERC Veeresh Deshpande, Sylvain Barraud, Xavier Jehl, Romain Wacquez, Maud Vinet, Remi Coquand, B. Roche, B. Voisin, François Triozon, C. Vizioz, L. Tosti, Bernard Previtali, P. Perreau, T. Poiroux, Marc Sanquer, Olivier Faynot
2012	—	`conf`	Study of carrier transport in strained and unstrained SOI tri-gate and omega-gate Si-nanowire MOSFETs. ESSDERC Masahiro Koyama, Mikaël Cassé, Remi Coquand, Sylvain Barraud, Hiroshi Iwai, Gérard Ghibaudo, Gilles Reimbold
2011	J	`jnl`	Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs. Microelectron. Reliab. Kiichi Tachi, Sylvain Barraud, Kuniyuki Kakushima, Hiroshi Iwai, Sorin Cristoloveanu, Thomas Ernst