Stéphane Lefebvre

28 papers Journal 27Unranked 1
YearRankTypeTitle / Venue / Authors
2019 J jnl
SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation.
Math. Comput. Simul.
F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Marc Cousineau
2018 J jnl
Effect of short circuit aging on safe operating area of SiC MOSFET.
Microelectron. Reliab.
Tien Anh Nguyen, Stéphane Lefebvre, Stephane Azzopardi
2018 J jnl
Ensure an original and safe "fail-to-open" mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation.
Microelectron. Reliab.
F. Boige, Frédéric Richardeau, Stéphane Lefebvre, Jean-Marc Blaquière, G. Guibaud, A. Bourennane
2018 J jnl
Experimental investigation of the reliability of Printed Circuit Board (PCB)-embedded power dies with pressed contact made of metal foam.
Microelectron. Reliab.
Yoann Pascal, Denis Labrousse, Mickael Petit, Stéphane Lefebvre, François Costa
2018 J jnl
Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode.
Microelectron. Reliab.
Oriol Avino-Salvado, Hervé Morel, Cyril Buttay, Denis Labrousse, Stéphane Lefebvre
2017 J jnl
Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation.
Microelectron. Reliab.
F. Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud
2017 J jnl
Mechanisms of power module source metal degradation during electro-thermal aging.
Microelectron. Reliab.
R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros
2016 J jnl
[131] Experimental study of the short-circuit robustness of 600 V E-mode GaN transistors.
Microelectron. Reliab.
Matthieu Landel, Cyrille Gautier, Denis Labrousse, Stéphane Lefebvre
2015 J jnl
Experimental and comparative study of gamma radiation effects on Si-IGBT and SiC-JFET.
Microelectron. Reliab.
Boubekeur Tala-Ighil, Jean-Lionel Trolet, Hamid Gualous, Philippe Mary, Stéphane Lefebvre
2015 J jnl
In-depth investigation of metallization aging in power MOSFETs.
Microelectron. Reliab.
R. Ruffilli, Mounira Berkani, Philippe Dupuy, Stéphane Lefebvre, Y. Weber, Marc Legros
2015 J jnl
Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs.
Microelectron. Reliab.
Cheng Chen, Denis Labrousse, Stéphane Lefebvre, Mickael Petit, Cyril Buttay, Hervé Morel
2014 J jnl
3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions.
Microelectron. Reliab.
Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Gilles Rostaing, Mounira Berkani, Stéphane Lefebvre, Philippe Dupuy
2013 J jnl
Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications.
Microelectron. Reliab.
Gilles Rostaing, Mounira Berkani, D. Mechouche, Denis Labrousse, Stéphane Lefebvre, Zoubir Khatir, Philippe Dupuy
2013 J jnl
Robustness of 1.2 kV SiC MOSFET devices.
Microelectron. Reliab.
D. Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, A. Bouzourene
2012 — conf
Application of thermoelectricity to IGBT for temperature regulation and energy harvesting.
ISIE
Yi Tian, Dejan Vasic, Stéphane Lefebvre
2012 J jnl
Comparison study on performances and robustness between SiC MOSFET & JFET devices - Abilities for aeronautics application.
Microelectron. Reliab.
D. Othman, M. Bouarroudj-Berkani, Stéphane Lefebvre, Ali Ibrahim, Zoubir Khatir, A. Bouzourene
2011 J jnl
A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices.
Microelectron. Reliab.
S. Pietranico, Stéphane Lefebvre, S. Pommier, M. Berkani Bouaroudj, S. Bontemps
2011 J jnl
Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling.
IEEE Trans. Ind. Electron.
Vanessa Smet, François Forest, Jean-Jacques Huselstein, Frédéric Richardeau, Zoubir Khatir, Stéphane Lefebvre, Mounira Berkani
2011 J jnl
Ageing defect detection on IGBT power modules by artificial training methods based on pattern recognition.
Microelectron. Reliab.
Amrane Oukaour, Boubekeur Tala-Ighil, Bertrand Pouderoux, M. Tounsi, M. Bouarroudj-Berkani, Stéphane Lefebvre, Bertrand Boudart
2011 J jnl
Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique.
Microelectron. Reliab.
Tien Anh Nguyen, Pierre-Yves Joubert, Stéphane Lefebvre, G. Chaplier, Lionel Rousseau
2010 J jnl
Ageing of SiC JFET transistors under repetitive current limitation conditions.
Microelectron. Reliab.
M. Bouarroudj-Berkani, D. Othman, Stéphane Lefebvre, S. Moumen, Zoubir Khatir, T. Ben Sallah
2009 J jnl
Characterisation of power modules ceramic substrates for reliability aspects.
Microelectron. Reliab.
S. Pietranico, S. Pommier, Stéphane Lefebvre, Zoubir Khatir, S. Bontemps
2009 J jnl
Estimation of SiC JFET temperature during short-circuit operations.
Microelectron. Reliab.
Mounira Berkani, Stéphane Lefebvre, Narjes Boughrara, Zoubir Khatir, Jean-Claude Faugières, Peter Friedrichs, Ali Haddouche
2007 J jnl
Degradation behavior of 600 V-200 A IGBT modules under power cycling and high temperature environment conditions.
Microelectron. Reliab.
M. Bouarroudj, Zoubir Khatir, Jean-Pierre Ousten, F. Badel, Laurent Dupont, Stéphane Lefebvre
2007 J jnl
Experimental and numerical investigations on delayed short-circuit failure mode of single chip IGBT devices.
Microelectron. Reliab.
Zoubir Khatir, Stéphane Lefebvre, F. Saint-Eve
2007 J jnl
Failure modes on low voltage power MOSFETs under high temperature application.
Microelectron. Reliab.
Laurent Dupont, Stéphane Lefebvre, M. Bouaroudj, Zoubir Khatir, Jean-Claude Faugières
2006 J jnl
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling.
Microelectron. Reliab.
Laurent Dupont, Zoubir Khatir, Stéphane Lefebvre, S. Bontemps
2004 J jnl
Boundary element analysis of thermal fatigue effects on high power IGBT modules.
Microelectron. Reliab.
Zoubir Khatir, Stéphane Lefebvre