Steve Stoffels

13 papers Journal 9Unranked 4
YearRankTypeTitle / Venue / Authors
2019 J jnl
Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.
IEICE Electron. Express
Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi
2019 — conf
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.
IRPS
Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2018 J jnl
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.
Microelectron. Reliab.
Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso
2017 J jnl
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.
Microelectron. Reliab.
Ales Chvála, Juraj Marek, Patrik Pribytny, Alexander Satka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
2017 J jnl
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.
Microelectron. Reliab.
Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
2016 — conf
New fast distributed thermal model for analysis of GaN based power devices.
ESSDERC
Vice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf
2016 J jnl
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.
Microelectron. Reliab.
Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2016 J jnl
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.
Microelectron. Reliab.
Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
2015 — conf
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.
IRPS
Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
2014 — conf
Breakdown investigation in GaN-based MIS-HEMT devices.
ESSDERC
Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
2014 J jnl
Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes.
Microelectron. Reliab.
Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
2014 J jnl
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
Microelectron. Reliab.
Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere
2012 J jnl
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.
Microelectron. Reliab.
Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere