Stephen J. Pearton

12 papers Journal 9Unranked 3
YearRankTypeTitle / Venue / Authors
2024 — conf
Demonstration of Record Breakdown up to 13.5 kV in NiO/β-Ga2O3 Vertical Rectifiers.
DRC
Jian-Sian Li, Hsiao-Hsuan Wan, Chao-Ching Chiang, Timothy Jinsoo Yoo, Meng-Hsun Yu, Fan Ren, Honggyu Kim, Yu-Te Liao, Stephen J. Pearton
2020 J jnl
A Two-Electrode, Double-Pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement.
IEEE Trans. Biomed. Circuits Syst.
Siang-Sin Shan, Shao-Yung Lu, Yuan-Po Yang, Shu-Ping Lin, Patrick Carey, Minghan Xian, Fan Ren, Stephen J. Pearton, Chin-Wei Chang, Jenshan Lin, Yu-Te Liao
2019 — conf
A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors.
EMBC
Shao-Yung Lu, Siang-Sin Shan, Jiancheng Yang, Chin-Wei Chang, Fan Ren, Jenshan Lin, Stephen J. Pearton, Yu-Te Liao
2018 — conf
2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier Diodes.
DRC
Jiancheng Yang, Fan Ren, Marko J. Tadjer, Stephen J. Pearton, Akita Kuramata
2017 J jnl
Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab.
Patrick G. Whiting, M. R. Holzworth, A. G. Lind, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren, Y. Xin
2017 J jnl
Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts.
Microelectron. Reliab.
Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren
2012 J jnl
Gallium nitride-based gas, chemical and biomedical sensors.
IEEE Instrum. Meas. Mag.
Stephen J. Pearton, Fan Ren
2012 J jnl
Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors.
Microelectron. Reliab.
E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, Kevin S. Jones, Lu Liu, Jinhyung Kim, Soohwan Jang, Glen David Via, Fan Ren, Stephen J. Pearton
2012 J jnl
Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping.
Microelectron. Reliab.
David J. Cheney, Rick Deist, Brent P. Gila, Jennilee Navales, Fan Ren, Stephen J. Pearton
2012 J jnl
Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors.
Microelectron. Reliab.
Patrick G. Whiting, Nicholas G. Rudawski, M. R. Holzworth, Stephen J. Pearton, Kevin S. Jones, Lu Liu, T. S. Kang, Fan Ren
2011 J jnl
AlGaN/GaN High Electron Mobility Transistor degradation under on- and off-state stress.
Microelectron. Reliab.
E. A. Douglas, C. Y. Chang, David J. Cheney, B. P. Gila, Chi-Fai Lo, Liu Lu, M. R. Holzworth, Patrick G. Whiting, Kevin S. Jones, Glen David Via, Jinhyung Kim, Soohwan Jang, Fan Ren, Stephen J. Pearton
2009 J jnl
Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices.
Sensors
Travis Anderson, Fan Ren, Stephen J. Pearton, Byoung Sam Kang, Hung-Ta Wang, Chih-Yang Chang, Jenshan Lin