Stefan Shopov

13 papers Journal 8Unranked 5
YearRankTypeTitle / Venue / Authors
2019 — conf
A 42.2Gb/s 4.3pJ/b 60GHz Digital Transmitter with 12b/Symbol Polarization MIMO.
ISSCC
Chintan Thakkar, Stefan Shopov, Anandaroop Chakrabarti, Shuhei Yamada, Debabani Choudhury, James E. Jaussi, Bryan Casper
2018 J jnl
A
IEEE J. Solid State Circuits
Stefan Shopov, Ozan D. Gurbuz, Gabriel M. Rebeiz, Sorin P. Voinigescu
2017 — conf
A 13.2-dBm, 138-GHz I/Q RF-DAC with 64-QAM and OFDM free-space constellation formation.
ESSCIRC
Stefan Shopov, Ozan D. Gurbuz, Gabriel M. Rebeiz, Sorin P. Voinigescu
2017 — conf
A 44Gbps high extinction ratio silicon Mach-Zehnder modulator with a 3D-integrated 28nm FD-SOI CMOS driver.
OFC
Zheng Yong, Stefan Shopov, Jared C. Mikkelsen, Robert Mallard, Jason C. C. Mak, Sorin P. Voinigescu, Joyce K. S. Poon
2017 J jnl
Silicon Millimeter-Wave, Terahertz, and High-Speed Fiber-Optic Device and Benchmark Circuit Scaling Through the 2030 ITRS Horizon.
Proc. IEEE
Sorin P. Voinigescu, Stefan Shopov, James Bateman, Hassan Farooq, James Hoffman, Konstantinos Vasilakopoulos
2016 J jnl
55-nm SiGe BiCMOS Distributed Amplifier Topologies for Time-Interleaved 120-Gb/s Fiber-Optic Receivers and Transmitters.
IEEE J. Solid State Circuits
James Hoffman, Stefan Shopov, Pascal Chevalier, Andreia Cathelin, Peter Schvan, Sorin P. Voinigescu
2016 J jnl
A 234-261-GHz 55-nm SiGe BiCMOS Signal Source with 5.4-7.2 dBm Output Power, 1.3% DC-to-RF Efficiency, and 1-GHz Divided-Down Output.
IEEE J. Solid State Circuits
Stefan Shopov, Andreea Balteanu, Jürgen Hasch, Pascal Chevalier, Andreia Cathelin, Sorin P. Voinigescu
2016 J jnl
A 3×60Gb/s Transmitter/Repeater Front-End With 4.3V
IEEE J. Solid State Circuits
Stefan Shopov, Sorin P. Voinigescu
2016 J jnl
Analog Circuit Blocks for 80-GHz Bandwidth Frequency-Interleaved, Linear, Large-Swing Front-Ends.
IEEE J. Solid State Circuits
James Hoffman, Jean-Roland Martin-Gosse, Stefan Shopov, Jack J. Pekarik, Renata Camillo-Castillo, Vibhor Jain, David L. Harame, Sorin P. Voinigescu
2015 — conf
A 3×40Gb/s 28nm FDSOI CMOS front-end array with 10mVPP sensitivity and >4VPP output swing.
ESSCIRC
Stefan Shopov, Sorin P. Voinigescu
2014 J jnl
A 19 dBm, 15 Gbaud, 9 bit SOI CMOS Power-DAC Cell for High-Order QAM W-Band Transmitters.
IEEE J. Solid State Circuits
Stefan Shopov, Andreea Balteanu, Sorin P. Voinigescu
2014 J jnl
A High Modulation Bandwidth, 110 GHz Power-DAC Cell for IQ Transmitter Arrays With Direct Amplitude and Phase Modulation.
IEEE J. Solid State Circuits
Andreea Balteanu, Stefan Shopov, Sorin P. Voinigescu
2013 — conf
A 19-dBm, 15-Gbaud, 9-bit SOI CMOS power-DAC cell for high-order QAM W-band transmitters.
ESSCIRC
Stefan Shopov, Andreea Balteanu, Sorin P. Voinigescu