Stefaan Decoutere

51 papers C 1Misc 1Journal 21Unranked 28

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	Monolithically Integrated Bootstrapped Gate Driver With a 200-V GaN Power Switch. IEEE Trans. Circuits Syst. I Regul. Pap. Katia Samperi, Urmimala Chatterjee, Stefaan Decoutere, Salvatore Pennisi
2025	—	`conf`	RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature. IRPS Maurizio Millesimo, Lorenzo Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot
2024	—	`conf`	Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate. IRPS Maurizio Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico
2023	—	`conf`	High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps. IRPS Davide Favero, Alberto Cavaliere, Carlo De Santi, Matteo Borga, W. Gonçalez Filho, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2022	—	`conf`	Analysis and Design of a Fully-Integrated Pulsed LiDAR Driver in 100V-GaN IC Technology. PRIME Andrea Bettini, Thibault Cosnier, Alessandro Magnani, Olga Syshchyk, Matteo Borga, Stefaan Decoutere, Andrea Neviani
2022	—	`conf`	Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits. ESSDERC Olga Syshchyk, Thibault Cosnier, Zheng-Hong Huang, Deepthi Cingu, Dirk Wellekens, Anurag Vohra, Karen Geens, Pavan Vudumula, Urmimala Chatterjee, Stefaan Decoutere, Tian-Li Wu, Benoit Bakeroot
2022	—	`conf`	Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS Maurizio Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico
2022	—	`conf`	Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2021	J	`jnl`	An E-mode p-GaN HEMT monolithically-integrated three-level gate driver operating with a single voltage supply. IEICE Electron. Express Junichiro Nagao, Urmimala Chatterjee, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi
2021	—	`conf`	ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric. IRPS Eliana Acurio, Lionel Trojman, Brice De Jaeger, Benoit Bakeroot, Stefaan Decoutere
2021	—	`conf`	Vertical stack reliability of GaN-on-Si buffers for low-voltage applications. IRPS Elena Fabris, Matteo Borga, Niels Posthuma, Ming Zhao, Brice De Jaeger, Shuzhen You, Stefaan Decoutere, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni
2020	—	`conf`	Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors. IRPS Kalparupa Mukherjee, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, Shuzhen You, Karen Geens, Matteo Borga, Benoit Bakeroot, Stefaan Decoutere
2019	J	`jnl`	Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process. IEICE Electron. Express Yuki Yamashita, Steve Stoffels, Niels Posthuma, Karen Geens, Xiangdong Li, Jun Furuta, Stefaan Decoutere, Kazutoshi Kobayashi
2019	—	`conf`	Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. ESSDERC Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken, Zhanfei Chen, Jun Liu, Yuki Yamashita, Kazutoshi Kobayashi
2019	—	`conf`	Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability. IRPS Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot, Andrea Natale Tallarico, Enrico Sangiorgi, Claudio Fiegna, J. Zheng, X. Ma, Matteo Borga, Elena Fabris, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso, Juraj Priesol, Alexander Satka
2018	J	`jnl`	Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs. Microelectron. Reliab. Matteo Borga, Matteo Meneghini, Steve Stoffels, Marleen Van Hove, M. Zhao, X. Li, Stefaan Decoutere, Enrico Zanoni, Gaudenzio Meneghesso
2017	J	`jnl`	Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation. Microelectron. Reliab. Ales Chvála, Juraj Marek, Patrik Pribytny, Alexander Satka, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Daniel Donoval
2017	J	`jnl`	Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Eleonora Canato, Marco Barbato, Steve Stoffels, Niels Posthuma, Stefaan Decoutere, Andrea Natale Tallarico, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2016	J	`jnl`	Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. Gaudenzio Meneghesso, Matteo Meneghini, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni
2015	J	`jnl`	Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni
2015	—	`conf`	Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs
2014	—	`conf`	Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso
2014	J	`jnl`	Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes. Microelectron. Reliab. Jie Hu, Steve Stoffels, Silvia Lenci, Nicolo Ronchi, Rafael Venegas, Shuzhen You, Benoit Bakeroot, Guido Groeseneken, Stefaan Decoutere
2014	J	`jnl`	Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere
2012	—	`conf`	High temperature behaviour of GaN-on-Si high power MISHEMT devices. ESSDERC Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere
2012	J	`jnl`	Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere
2011	J	`jnl`	GaN-based HEMTs tested under high temperature storage test. Microelectron. Reliab. Denis Marcon, Xuanwu Kang, John Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert Mertens, Gustaaf Borghs
2010	C	`conf`	45-nm Planar bulk-CMOS 23-GHz LNAs with high-Q above-IC inductors. ISCAS Wen-Chieh Wang, Zue-Der Huang, Geert Carchon, Abdelkarim Mercha, Stefaan Decoutere, Walter De Raedt, Chung-Yu Wu
2010	Misc	`conf`	Identifying the Bottlenecks to the RF Performance of FinFETs. VLSI Design Vaidyanathan Subramanian, Abdelkarim Mercha, Bertrand Parvais, Morin Dehan, Guido Groeseneken, Willy M. C. Sansen, Stefaan Decoutere
2009	J	`jnl`	A plug-and-play wideband RF circuit ESD protection methodology: T-diodes. Microelectron. Reliab. Dimitri Linten, Steven Thijs, Jonathan Borremans, Morin Dehan, David Trémouilles, Mirko Scholz, M. I. Natarajan, Piet Wambacq, Stefaan Decoutere, Guido Groeseneken
2009	—	`conf`	FinFET RF receiver building blocks operating above 10 GHz. ESSCIRC Domagoj Siprak, Piet Wambacq, Bertrand Parvais, Abdelkarim Mercha, Michael Fulde, Jesenka Veledar Kruger, Morin Dehan, Stefaan Decoutere
2009	—	`conf`	Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter
2008	—	`conf`	A 400 μW 4.7-to-6.4GHz VCO under an Above-IC Inductor in 45nm CMOS. ISSCC Jonathan Borremans, Piet Wambacq, Maarten Kuijk, Geert Carchon, Stefaan Decoutere
2008	—	`conf`	Advanced Planar Bulk and Multigate CMOS Technology: Analog-Circuit Benchmarking up to mm-Wave Frequencies. ISSCC Piet Wambacq, Abdelkarim Mercha, Karen Scheir, Bob Verbruggen, Jonathan Borremans, Vincent De Heyn, Steven Thijs, Dimitri Linten, Geert Van der Plas, Bertrand Parvais, Morin Dehan, Stefaan Decoutere, Charlotte Soens, Nadine Collaert, Malgorzata Jurczak
2007	—	`conf`	An Accurate Scalable Compact Model for the Substrate Resistance of RF MOSFETs. CICC Bertrand Parvais, S. Hu, Morin Dehan, Abdelkarim Mercha, Stefaan Decoutere
2007	—	`conf`	FinFET technology for analog and RF circuits. ICECS Bertrand Parvais, Vaidyanathan Subramanian, Abdelkarim Mercha, Morin Dehan, Piet Wambacq, Willy Sansen, Guido Groeseneken, Stefaan Decoutere
2007	J	`jnl`	The Potential of FinFETs for Analog and RF Circuit Applications. IEEE Trans. Circuits Syst. I Regul. Pap. Piet Wambacq, Bob Verbruggen, Karen Scheir, Jonathan Borremans, Morin Dehan, Dimitri Linten, Vincent De Heyn, Geert Van der Plas, Abdelkarim Mercha, Bertrand Parvais, Cedric Gustin, Vaidyanathan Subramanian, Nadine Collaert, Malgorzata Jurczak, Stefaan Decoutere
2006	—	`conf`	A 0.16pJ/Conversion-Step 2.5mW 1.25GS/s 4b ADC in a 90nm Digital CMOS Process. ISSCC Geert Van der Plas, Stefaan Decoutere, Stéphane Donnay
2006	J	`jnl`	Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
2006	—	`conf`	Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges. CICC Stefaan Decoutere, Piet Wambacq, Vaidy Subramanian, Jonathan Borremans, Abdelkarim Mercha
2005	—	`conf`	24 GHz LNA in 90nm RF-CMOS with high-Q above-IC inductors. ESSCIRC Olivier Dupuis, Xiao Sun, Geert Carchon, Philippe Soussan, Mattias Ferndahl, Stefaan Decoutere, Walter De Raedt
2005	J	`jnl`	A 5-GHz fully integrated ESD-protected low-noise amplifier in 90-nm RF CMOS. IEEE J. Solid State Circuits Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere
2005	—	`conf`	Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors. CICC Dimitri Linten, Xiao Sun, Steven Thijs, M. I. Natarajan, Abdelkarim Mercha, Geert Carchon, Piet Wambacq, Takeshi Nakaie, Stefaan Decoutere
2005	J	`jnl`	Low-power voltage-controlled oscillators in 90-nm CMOS using high-quality thin-film postprocessed inductors. IEEE J. Solid State Circuits Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Piet Wambacq, Morin Dehan, Lars Aspemyr, Andries J. Scholten, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt
2005	—	`conf`	RF ESD protection strategies - the design and performance trade-off challenges. CICC Philippe Jansen, Steven Thijs, Dimitri Linten, M. I. Natarajan, Vesselin K. Vassilev, Mingxu Liu, Ann Concannon, David Trémouilles, Takeshi Nakaie, Masanori Sawada, Vladislav A. Vashchenko, Marcel ter Beek, Takumi Hasebe, Stefaan Decoutere, Guido Groeseneken
2004	—	`conf`	A 328 μW 5 GHz voltage-controlled oscillator in 90 nm CMOS with high-quality thin-film post-processed inductor. CICC Dimitri Linten, Xiao Sun, Geert Carchon, Wutthinan Jeamsaksiri, Abdelkarim Mercha, Javier Ramos, Snezana Jenei, Lars Aspemyr, Andries J. Scholten, Piet Wambacq, Stefaan Decoutere, Stéphane Donnay, Walter De Raedt
2004	—	`conf`	A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS. ESSCIRC Dimitri Linten, Steven Thijs, Mahadeva Iyer Natarajan, Piet Wambacq, Wutthinan Jeamsaksiri, Javier Ramos, Abdelkarim Mercha, Snezana Jenei, Stéphane Donnay, Stefaan Decoutere
2002	J	`jnl`	An easy-to-use mismatch model for the MOS transistor. IEEE J. Solid State Circuits Jeroen A. Croon, Maarten Rosmeulen, Stefaan Decoutere, Willy Sansen, Herman E. Maes
2002	J	`jnl`	Physics-based closed-form inductance expression for compact modeling of integrated spiral inductors. IEEE J. Solid State Circuits Snezana Jenei, Bart K. J. C. Nauwelaers, Stefaan Decoutere
2001	J	`jnl`	Impact of gate oxide nitridation process on 1/f noise in 0.18 mum CMOS. Microelectron. Reliab. M. Da Rold, Eddy Simoen, Sofie Mertens, Marc Schaekers, G. Badenes, Stefaan Decoutere